COMSET 2N4399

PNP 2N4398 – 2N4399 – 2N5745
SILICON POWER TRANSISTORS
They are PNP transistors mounted in Jedec TO-3 package.
They are intended for use in power amplifier and switching circuits applications.
Complement to NPN 2N5301 – 2N5302 – 2N5303.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
2N4398
2N4399
2N5745
2N4398
2N4399
2N5745
2N4398
2N4399
2N5745
Collector Current
IC
ICM
IB
IBM
PTOT
TJ
TS
Value
Collector Peak Current
Base Current
Base Peak Current
Power Dissipation
Junction Temperature
Storage Temperature
@ TC = 25°
Unit
-40
-60
-80
-40
-60
-80
-5
V
V
V
-30
A
-20
50
-7.5
15
200
200
-65 to +200
A
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-C
RthJ-A
Ratings
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Value
Unit
0.875
35
°C/W
°C/W
1|4
24/09/2012
COMSET SEMICONDUCTORS
PNP 2N4398 – 2N4399 – 2N5745
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
2N4398
2N4399
2N5745
VCB = -40 V, IE = 0
2N4398
VCB = -60 V, IE = 0
2N4399
VCB = -80 V, IE = 0
2N5745
2N4398
VCE= -40 V, IB = 0
VCE= -60 V, IB = 0
2N4399
VCE= -80 V, IB = 0
2N5745
2N4398
VEB= -5 V, IC = 0
2N4399
2N5745
VCE= -40 V, VBE= 1.5 V 2N4398
VCE= -40 V, VBE= 1.5 V 2N4399
VCE= -40 V, VBE= 1.5 V 2N5745
VCE= -40 V, VBE= 1.5 V
2N4398
TC = 150°C
VCE= -40 V, VBE= 1.5 V
2N4399
TC = 150°C
VCE= -40 V, VBE= 1.5 V
2N5745
TC = 150°C
2N4398
2N4399
IC= -10 A, IB= -1 A
2N5745
2N4398
IC= -15 A, IB= -1.5 A
2N4399
2N5745
2N4398
IC= -20 A, IB= -2 A
2N4399
IC= -20 A, IB= -4 A
2N5745
2N4398
IC= -30 A, IB= -6 A
2N4399
2N4398
2N4399
IC= -10 A, IB= -1 A
2N5745
2N4398
IC= -15 A, IB= -1.5 A
2N4399
2N5745
2N4398
IC= -20 A, IB= -2 A
2N4399
IC= -20 A, IB= -4 A
2N5745
VCEO(BR)
Collector-Emitter
IC= -200 mA
Breakdown Voltage (*) IB= 0
ICBO
Collector Cutoff
Current
ICEO
Collector Cutoff
Current
IEBO
Emitter Cutoff Current
ICEX
VCE(SAT)
VBE(SAT)
Collector Cutoff
Current
Collector-Emitter
saturation Voltage (*)
Base-Emitter
saturation Voltage (*)
Min
Typ
MAx Unit
-40
-60
-80
-
-
V
-
-
-1
mA
-
-
-5
mA
-
-
-5
mA
-
-
-5
mA
-
-
-10
-
-
-0.75
-
-
-1
-
-
-1
-
-
-1.5
-
-
-2
-
-
-4
-
-
-1.6
-
-
-1.7
-
-
-1.85
-
-
-2
-
-
-2.5
V
V
2|4
24/09/2012
COMSET SEMICONDUCTORS
PNP 2N4398 – 2N4399 – 2N5745
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IC= -15 A, VCE= -2 V
Base-Emitter on
Voltage (*)
VBE(on)
IC= -10 A, VCE= -2 V
IC= -30 A, VCE= -4 V
IC= -20 A, VCE= -4 V
IC= -1 A, VCE= -2 V
hFE
DC Current Gain (*)
IC= -15 A, VCE= -2 V
IC= -10 A, VCE= -2 V
IC= -30 A, VCE= -2 V
IC= -20 A, VCE= -4 V
fT
Transition Frequency
VCE= -10 V, IC= -1 A
f= 1 MHz
2N4398
2N4399
2N5745
2N4398
2N4399
2N5745
2N4398
2N4399
2N5745
2N4398
2N4399
2N5745
2N4398
2N4399
2N5745
2N4398
2N4399
2N5745
Min
Typ
MA
x
-
-
-1.7
-
-
-1.5
-
-
-3
40
-
-
-2.5
-
15
-
60
5
-
-
4
-
-
2
-
Unit
V
-
MHz
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2 %
3|4
24/09/2012
COMSET SEMICONDUCTORS
PNP 2N4398 – 2N4399 – 2N5745
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
A
B
C
D
F
G
N
P
R
U
V
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
Pin 1 :
Pin 2 :
Case :
max
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Base
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
info@comsetsemi.com
4|4
24/09/2012
COMSET SEMICONDUCTORS