NPN 2N6249 – 2N6250 – 2N6251 HIGH VOLTAGE SILICON POWER TRANSISTORS The 2N6249 – 2N6250 – 2N6251 are NPN silicon transistors in Jedec TO-3 metal case. They are designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications. Compliance to RoHS. • High Voltage Breakdown Rating • Low Saturation Voltages • Fast Switching Capability • High Es/b Energy Handling Capability ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage (*) VCER Collector-Emitter Voltage (*) RBE=50 Ω VCB Collector-Base Voltage (*) VEB IC ICM IB Pt TJ Tstg Emitter-Base Voltage Collector Current Collector Current Peak Base Current Total Power Dissipation Junction Temperature (*) Storage Temperature (*) 20/11/2012 @ TC = 25° COMSET SEMICONDUCTORS Value 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 Unit 200 275 350 225 300 375 300 375 450 6 10 30 10 175 200 -65 to +200 V V V V A A W °C 1|4 NPN 2N6249 – 2N6250 – 2N6251 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max 200 275 350 225 300 375 - - - - 5 - - 5 - - 10 - - 5 - - 10 - - 5 - - 10 - - 1 mA 10 8 6 - 50 50 50 - - - 1.5 V - - 2.25 V VCE=30 V t=1 s, non-repetitive 5.8 - - A VCE=10 V, IC=1 A, f = 1.0 MHz 2.5 - - MHz VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200 mA, IB=0 VCER(SUS) Collector-Emitter Sustaining Voltage IC=0.2 A, RBE=50 Ω ICEO Collector-Emitter Current VCE=150 V, IB=0 VCE=225 V, IB=0 VCE=300 V, IB=0 VCE=200 V, VEB=-1.5 V VCE=200 V, VEB=-1.5 V TC = 150°C VCE=275 V, VEB=-1.5 V ICEX Collector Cutoff Current VCE=275 V, VEB=-1.5 V TC = 150°C 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 VCE=350 V, VEB=-1.5 V VCE=350 V, VEB=-1.5 V TC = 150°C IEBO Emitter Cutoff Current hFE Dc Current Gain VCE(SAT) Collector-Emitter Saturation Voltage (*) VBE(SAT) Base-Emitter Saturation Voltage (*) Is/b fT IC=10 A, VCE=3 V Second Breakdown Collector Current With Base Forward Biased Transition Frequency 20/11/2012 VBE=6 V, IC=0 IC=10 A, IB=1 A IC=10 A, IB=1.25 A IC=10 A, IB=1.67 A IC=10 A, IB=1 A IC=10 A, IB=1.25 A IC=10 A, IB=1.67 A COMSET SEMICONDUCTORS 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2|4 Unit V V mA mA NPN 2N6249 – 2N6250 – 2N6251 SWITCHING TIMES Symbol Ratings tr Rise Time ts Storage Time tf Fall Time Test Condition(s) VCC= 200 V, IC= 10 A IB1 = -IB2=1 A VCC= 200 V, IC= 10 A IB1 = -IB2=1.25 A VCC= 200 V, IC= 10 A IB1 = -IB2=1.67 A Min Typ Max 2N6249 - - 2 2N6250 - - 3.5 2N6251 - - 1 Unit µs THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case 20/11/2012 COMSET SEMICONDUCTORS Value Unit 1 °C/W 3|4 NPN 2N6249 – 2N6250 – 2N6251 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) A B C D F G N P R U V min max 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Pin 1 : Pin 2 : Case : Base Emitter Collector Revised October 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 20/11/2012 [email protected] COMSET SEMICONDUCTORS 4|4