COMSET 2N6284

2N6282 – 2N6283 – 2N6284
NPN SILICON DARLINGTON POWER TRANSISTOR
The 2N6282, 2N6283 and 2N6284 are mounted in TO-3 metal package.
They are designed for use in general–purpose amplifier and low–frequency switching
applications.
The complementary PNP are 2N6285, 2N6286, 2N6287
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage (IB=0)
VCBO
Collector-Base Voltage (IE=0)
VEBO
Emitter-Base Voltage (IC=0)
IC
Collector Current
ICM
Collector Peak Current
IB
Base Current
PT
Power Dissipation
TJ
Junction Temperature
TS
Storage Temperature
04/12/2012
Value
@ TC = 25°
2N6282
2N6283
2N6284
2N6282
2N6283
2N6284
2N6282
2N6283
2N6284
2N6282
2N6283
2N6284
2N6282
2N6283
2N6284
2N6282
2N6283
2N6284
2N6282
2N6283
2N6284
2N6282
2N6283
2N6284
2N6282
2N6283
2N6284
COMSET SEMICONDUCTORS
Unit
60
80
100
60
80
100
V
V
5
V
20
A
40
0.5
A
160
W/°C
200
°C
-65 to +200
°C
1/3
2N6282 – 2N6283 – 2N6284
THERMAL CHARACTERISTICS
Symbol
RthJ-C
Ratings
Value
Unit
1.09
°C/W
Thermal Resistance Junction-Case
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Collector-Emitter
Breakdown Voltage
(*)
IC= 200 m A
IB= 0
ICEO
Collector Cutoff
Current
VCE= 30 V, IB= 0
VCE= 40 V, IB= 0
VCE= 50 V, IB= 0
IEBO
Emitter Cutoff
Current
VCEO(SUS)
ICEX
Collector Cutoff
Current
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
VBE(SAT)
Base-Emitter
saturation Voltage (*)
VBE
Base-Emitter Voltage
(*)
04/12/2012
Min
Typ
Max
2N6282
60
-
-
2N6283
80
-
-
2N6284
100
-
-
-
-
1
mA
-
-
2
mA
-
-
500
µA
-
-
5
mA
-
-
2
V
-
-
3
V
-
-
4
V
-
-
2,8
V
2N6282
2N6283
2N6284
2N6282
VBE= 5 V, IC= 0
2N6283
2N6284
2N6282
VCE= 60 V, VBE= -1.5 V
VCE= 80 V, VBE= -1.5 V
2N6283
VCE= 100 V, VBE= -1.5 V 2N6284
VCE= 60 V, VBE= -1.5 V
2N6282
TC = 150°C
VCE= 80 V, VBE= -1.5 V
2N6283
TC = 150°C
VCE= 100 V, VBE= -1.5 V
2N6284
TC = 150°C
2N6282
IC= 10 A, IB= 40 mA
2N6283
2N6284
2N6282
IC= 20 A, IB= 200 mA
2N6283
2N6284
2N6282
2N6283
IC= 20 A, IB= 200 mA
2N6284
2N6282
VCE= 3 V, IC= 10 A
2N6283
2N6284
COMSET SEMICONDUCTORS
Unit
V
2/3
2N6282 – 2N6283 – 2N6284
Symbol
Ratings
Test Condition(s)
VCE= 3 V, IC= 10 A
DC Current Gain (*)
hFE
VCE= 3 V, IC= 20 A
IE= 0 A, VCB= 10V
f= 1MHz
Output Capacitance
COB
Min
2N6282
2N6283
2N6284
2N6282
2N6283
2N6284
2N6282
2N6283
2N6284
750
Typ
Max
-
18000
-
100
-
-
-
-
400
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
A
B
C
D
F
G
N
P
R
U
V
min
max
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
04/12/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
Unit
3/3
pF