2N6282 – 2N6283 – 2N6284 NPN SILICON DARLINGTON POWER TRANSISTOR The 2N6282, 2N6283 and 2N6284 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency switching applications. The complementary PNP are 2N6285, 2N6286, 2N6287 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage (IB=0) VCBO Collector-Base Voltage (IE=0) VEBO Emitter-Base Voltage (IC=0) IC Collector Current ICM Collector Peak Current IB Base Current PT Power Dissipation TJ Junction Temperature TS Storage Temperature 04/12/2012 Value @ TC = 25° 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 COMSET SEMICONDUCTORS Unit 60 80 100 60 80 100 V V 5 V 20 A 40 0.5 A 160 W/°C 200 °C -65 to +200 °C 1/3 2N6282 – 2N6283 – 2N6284 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Value Unit 1.09 °C/W Thermal Resistance Junction-Case ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Collector-Emitter Breakdown Voltage (*) IC= 200 m A IB= 0 ICEO Collector Cutoff Current VCE= 30 V, IB= 0 VCE= 40 V, IB= 0 VCE= 50 V, IB= 0 IEBO Emitter Cutoff Current VCEO(SUS) ICEX Collector Cutoff Current VCE(SAT) Collector-Emitter saturation Voltage (*) VCE(SAT) Collector-Emitter saturation Voltage (*) VBE(SAT) Base-Emitter saturation Voltage (*) VBE Base-Emitter Voltage (*) 04/12/2012 Min Typ Max 2N6282 60 - - 2N6283 80 - - 2N6284 100 - - - - 1 mA - - 2 mA - - 500 µA - - 5 mA - - 2 V - - 3 V - - 4 V - - 2,8 V 2N6282 2N6283 2N6284 2N6282 VBE= 5 V, IC= 0 2N6283 2N6284 2N6282 VCE= 60 V, VBE= -1.5 V VCE= 80 V, VBE= -1.5 V 2N6283 VCE= 100 V, VBE= -1.5 V 2N6284 VCE= 60 V, VBE= -1.5 V 2N6282 TC = 150°C VCE= 80 V, VBE= -1.5 V 2N6283 TC = 150°C VCE= 100 V, VBE= -1.5 V 2N6284 TC = 150°C 2N6282 IC= 10 A, IB= 40 mA 2N6283 2N6284 2N6282 IC= 20 A, IB= 200 mA 2N6283 2N6284 2N6282 2N6283 IC= 20 A, IB= 200 mA 2N6284 2N6282 VCE= 3 V, IC= 10 A 2N6283 2N6284 COMSET SEMICONDUCTORS Unit V 2/3 2N6282 – 2N6283 – 2N6284 Symbol Ratings Test Condition(s) VCE= 3 V, IC= 10 A DC Current Gain (*) hFE VCE= 3 V, IC= 20 A IE= 0 A, VCB= 10V f= 1MHz Output Capacitance COB Min 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 750 Typ Max - 18000 - 100 - - - - 400 (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) A B C D F G N P R U V min max 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Pin 1 : Pin 2 : Case : Base Emitter Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 04/12/2012 [email protected] COMSET SEMICONDUCTORS Unit 3/3 pF