COMSET 2SC4550

NPN 2SC4550
SILCON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4550 is a power transistor developed for
high-speed switching and features low
VCE(sat) and high hFE.
This transistor is ideal for use in drivers such as
DC/DC converters and actuators.
In addition, a small resin-molded insulation type
package contributes to high-density mounting and
reduction of cost.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
7
A
IC(pulse)
Collector Current (pulse)
14
A
IB
Base Current
3.5
A
PD
Total Power Dissipation
@ TC = 25°C
30
W
Total Power Dissipation
@ Ta = 25°C
2
W
PD
TJ
Junction Temperature
150
°C
TStg
Storage Temperature
-65 to +200
°C
08/10/2012
COMSET SEMICONDUCTORS
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NPN 2SC4550
hFE CLASSIFICATION
Marking
hFE2
Test Condition(s)
IC = 1.5 A, VCE = 2 V
M
L
K
100 to 200
150 to 300
200 to 400
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO
VCEX
ICBO
ICER
ICEX
IEBO
hFE
VCE(SAT)
VBE(SAT)
Cob
fT
ton
tstg
tf
Ratings
Test Condition(s)
Collector to Emitter Voltage IC = 4 A, IB = 0.4 A, L = 1 mH
IC = 4 A, IB1 = -IB2 = 0.4 A
Collector to Emitter Voltage VBE(OFF) = -1.5V, L = 180 µH
clamped
Collector Cutoff Current
VCB = 60 V, IE = 0
VCE = 60 V, RBE = 50 Ω
Collector Cutoff Current
Ta = 125°C
VCE = 60 V, VBE(OFF) = -1.5 V
Collector Cutoff Current
VCE = 60 V, VBE(OFF) = -1.5 V
Ta = 125°C
Emitter Cutoff Current
VEB = 5.0 V, IC = 0
hFE1
IC = 0.7 A, VCE = 2 V
DC Current Gain (*) hFE2
IC = 1.5 A, VCE = 2 V
hFE3
IC = 4 A, VCE = 2 V
Collector-Emitter saturation IC = 4 A, IB = 0.2 A
Voltage (*)
IC = 6 A, IB = 0.3 A
IC = 4 A, IB = 0.2 A
Base-Emitter saturation
Voltage (*)
IC = 6 A, IB = 0.3 A
VCB = 10 V, IE = 0
Collector capacitance
f = 1.0MHz
Gain bandwidth product
IC = 1 A, VCE = 10 V
Turn-on time
IC = 4 A, RL = 12.5 Ω
Storage time
IB1 = -IB2 = 0.2 A, VCC = 50 V
Refer to the test circuit.
Fall time
Min
Typ
Max
Unit
60
-
-
60
-
-
-
-
10
µA
-
-
1
mA
-
-
10
µA
-
-
1
mA
100
100
60
-
200
-
10
400
0.3
0.5
1.2
1.5
µA
-
100
-
pF
-
150
0.1
1
0.1
0.3
1.5
0.3
MHz
V
-
V
µs
(*) Pulse conditions : tp < 300 µs, δ =2%
08/10/2012
COMSET SEMICONDUCTORS
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NPN 2SC4550
MECHANICAL DATA CASE TO-220
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
08/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
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