NPN 2SC4550 SILCON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of cost. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current 7 A IC(pulse) Collector Current (pulse) 14 A IB Base Current 3.5 A PD Total Power Dissipation @ TC = 25°C 30 W Total Power Dissipation @ Ta = 25°C 2 W PD TJ Junction Temperature 150 °C TStg Storage Temperature -65 to +200 °C 08/10/2012 COMSET SEMICONDUCTORS 1|3 NPN 2SC4550 hFE CLASSIFICATION Marking hFE2 Test Condition(s) IC = 1.5 A, VCE = 2 V M L K 100 to 200 150 to 300 200 to 400 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO VCEX ICBO ICER ICEX IEBO hFE VCE(SAT) VBE(SAT) Cob fT ton tstg tf Ratings Test Condition(s) Collector to Emitter Voltage IC = 4 A, IB = 0.4 A, L = 1 mH IC = 4 A, IB1 = -IB2 = 0.4 A Collector to Emitter Voltage VBE(OFF) = -1.5V, L = 180 µH clamped Collector Cutoff Current VCB = 60 V, IE = 0 VCE = 60 V, RBE = 50 Ω Collector Cutoff Current Ta = 125°C VCE = 60 V, VBE(OFF) = -1.5 V Collector Cutoff Current VCE = 60 V, VBE(OFF) = -1.5 V Ta = 125°C Emitter Cutoff Current VEB = 5.0 V, IC = 0 hFE1 IC = 0.7 A, VCE = 2 V DC Current Gain (*) hFE2 IC = 1.5 A, VCE = 2 V hFE3 IC = 4 A, VCE = 2 V Collector-Emitter saturation IC = 4 A, IB = 0.2 A Voltage (*) IC = 6 A, IB = 0.3 A IC = 4 A, IB = 0.2 A Base-Emitter saturation Voltage (*) IC = 6 A, IB = 0.3 A VCB = 10 V, IE = 0 Collector capacitance f = 1.0MHz Gain bandwidth product IC = 1 A, VCE = 10 V Turn-on time IC = 4 A, RL = 12.5 Ω Storage time IB1 = -IB2 = 0.2 A, VCC = 50 V Refer to the test circuit. Fall time Min Typ Max Unit 60 - - 60 - - - - 10 µA - - 1 mA - - 10 µA - - 1 mA 100 100 60 - 200 - 10 400 0.3 0.5 1.2 1.5 µA - 100 - pF - 150 0.1 1 0.1 0.3 1.5 0.3 MHz V - V µs (*) Pulse conditions : tp < 300 µs, δ =2% 08/10/2012 COMSET SEMICONDUCTORS 2|3 NPN 2SC4550 MECHANICAL DATA CASE TO-220 Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 08/10/2012 [email protected] COMSET SEMICONDUCTORS 2|3