PNP BC177 – BC178 – BC179 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC177,BC178 and BC179 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM PD TJ TStg BC177 BC178 BC179 Collector-Emitter Voltage (IB =0) Collector-Base Voltage (IE =0) Emitter-Base Voltage (IC =0) Collector Current Collector Peak Current Total Power Dissipation @ Tamb = 25° Junction Temperature Storage Temperature range -50 -45 -30 -25 -25 -20 -5 -100 -200 300 175 -65 to +150 Unit V V V mA mA mW °C °C ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol Ratings Test Condition(s) VCB =-20 V IE = 0 ICBO Collector Cutoff Current VCB = -20 V IE = 0 V Tj = 150°C VCEO Collector-Emitter Breakdown Voltage IC = -2 mA IB = 0 VCBO Collector-Base Breakdown Voltage IC = -10 µA VBE = 0 VEBO Emitter-Base Breakdown IE = -10 µA Voltage IC = 0 18/10/2012 BC177 BC178 BC179 BC177 BC178 BC179 BC177 BC178 BC179 BC177 BC178 BC179 BC177 BC178 BC179 COMSET SEMICONDUCTORS Min Typ Max Unit - -1 -100 nA - - -10 µA -45 -25 -20 -50 -30 -25 - - -5 V V V 1|3 PNP BC177 – BC178 – BC179 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol VCE(SAT) VBE(SAT) VBE hFE Ratings Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain (*) Noise figure F CC Collector capacitance BC177 BC178 BC179 BC177 IC =-100 mA BC178 IB =-5 mA BC179 BC177 IC =-10 mA BC178 IB =-0.5 mA BC179 BC177 IC =-100 mA BC178 IB =-5 mA BC179 BC177 IC =-2 mA BC178 VCE =-5 V BC179 BC177A BC178A BC179A IC= -2 mA VCE= 5 V BC177B BC178B BC179B BC177 IC =-10 mA VCE =-5 V BC178 f = 100 MHz BC179 IC = -200 µA BC177 VCE =-5 V BC178 f = 1kHz Rg=2kΩ BC179 B = 200Hz IC =-10 mA IB =-0.5 mA Collector-Emitter saturation Voltage Transition frequency fT Test Condition(s) IE = 0 VCB =-10 V f = 1MHz BC177 BC178 BC179 Min Typ Max - -0.075 -0.25 - -0.2 - - -0.72 -0.8 Unit V - -0.6 125 -0.86 -0.65 - - -0.75 V 260 - 240 - 500 - 200 - - - 10 - - 10 - - 4 - 5 - MHz db pF THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to mounting base Thermal Resistance, Junction to ambient in free air 18/10/2012 COMSET SEMICONDUCTORS Value Unit 500 200 °C/W °C/W 2|3 PNP BC177 – BC178 – BC179 ECHANICAL DATA CASE TO-18 DIMENSIONS (mm) min A B C D E F G H I L max 12.7 0.9 2.54 45° Pin 1 : Pin 2 : Pin 3 : Case : 0.49 5.3 4.9 5.8 1.2 1.16 - emitter base Collector Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 03/09/2012 [email protected] COMSET SEMICONDUCTORS 2/3