NPN BD241 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD241, A, B, C are the NPN transistors mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The PNP complements are BD242, A, B, C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage (IB = 0) VCER Collector-Emitter Voltage (RBE = 100 Ω) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current IB Base Current PT TJ TS Value BD241 BD241A BD241B BD241C BD241 BD241A BD241B BD241C BD241 BD241A BD241B BD241C IC ICM @ Tamb = 25° C @ Tcase = 25° C Power Dissipation Junction Temperature Storage Temperature 45 60 80 100 55 70 90 115 5.0 3 5 1 2 40 150 -65 to +150 Unit V V V A A W W °C THERMAL CHARACTERISTICS Symbol RthJ-amb RthJ-case Ratings Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case 23/10/2012 COMSET SEMICONDUCTORS Value Unit 62.5 3.13 °C/W °C/W 1/3 NPN BD241 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO IEBO Ratings Test Condition(s) Collector Cutoff Current Emitter Cutoff Current VCE=30 V VCE=30 V VCE=60 V VCE=60 V VBE=5 V VCE=55 V VCE=70 V VCE=90 V VCE=115 V ICES Collector Cutoff Current (VBE = 0) VCEO(sus) Collector-Emitter Sustaining IC =30mA Voltage (IB = 0) (*) VCE=4 V, IC=1 A hFE DC Current Gain (*) VCE=4 V, IC=3 A VCE(SAT) Collector-Emitter saturation Voltage (*) IC=3 A, IB=0.6 A VBE(on) Base-Emitter Voltage (*) VCE=4 V, IC=3 A VCE=10 V IC=0.5 A f = 1KHz hfe Small Signal Current Gain VCE=10 V IC=0.5 A f = 1MHz BD241 BD241A BD241B BD241C BD241 BD241A BD241B BD241C BD241 BD241A BD241B BD241C BD241 BD241A BD241B BD241C BD241 BD241A BD241B BD241C BD241 BD241A BD241B BD241C BD241 BD241A BD241B BD241C BD241 BD241A BD241B BD241C BD241 BD241A BD241B BD241C BD241 BD241A BD241B BD241C Min Typ 45 60 80 100 - 25 Max Unit 0.3 mA 1.0 mA 0.2 mA V - - 10 - - - - 1.2 V - - 1.8 V - - - - 20 3 - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 23/10/2012 COMSET SEMICONDUCTORS 2/3 NPN BD241 – A – B – C MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Pin 1 : Pin 2 : Pin 3 : Case : Max. 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Base Collector Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 23/10/2012 [email protected] COMSET SEMICONDUCTORS 3/3