COMSET BD245A

BD245 – A – B – C
NPN SINGLE-DIFFUSED MESA SILICON POWER
TRANSISTORS
They are the power transistors for power amplifier and high-speed-switching applications.
The complementary is BD246, A, B, C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage (IC = -30mA)
VCER
Collector-Emitter Voltage (RBE = 100 Ω)
VEBO
Emitter-Base Voltage
IC
Collector Current
IB
PT
TJ
TS
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
BD245
BD245A
BD245B
BD245C
BD245
BD245A
BD245B
BD245C
IC
ICM
Tmb = 25° C
45
60
80
100
55
70
90
115
5.0
10
15
3
80
-65 to +150
-65 to +150
Unit
V
V
V
A
A
Watts
°C
THERMAL CHARACTERISTICS
Symbol
RthJC
RthJA
Ratings
Junction to Case Thermal Resistance
Junction to free air Thermal Resistance
22/10/2012
COMSET SEMICONDUCTORS
Value
Unit
1.56
42
°C / W
°C / W
1/3
BD245 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICES
Collector- Emitter
Cut-off Current
ICEO
Collector Cut-off
Current
Test Condition(s)
VCE
VCE
VCE
VCE
= 55 V , VBE = 0
= 70 V , VBE = 0
= 90 V , VBE = 0
= 115 V , VBE = 0
VCE = 30 V , IB = 0
VCE = 60 V , IB = 0
IEBO
Emitter Cut-off Current VE B = 5 V , IC = 0
VCEO
Collector- Emitter
I = 30 mA, IB = 0
Breakdown Voltage (*) C
hFE
DC Current Gain (*)
VCE(SAT)
VBE
hfe
|hfe|
Collector-Emitter
saturation Voltage (*)
Base-Emitter
Voltage(*)
Small Signal forward
Current Transfer ratio
Small Signal forward
Current Transfer ratio
BD245
BD245A
BD245B
BD245C
BD245
BD245A
BD245B
BD245C
BD245
BD245A
BD245B
BD245C
VCE = 4 V, IC = 1 A
VCE = 4 V, I C= 3 A
VCE = 4 V, IC = 10 A
IC = 3 A, IB = 300 mA
IC = 10 A, IB = 2.5 A
VCE = 4 V, IC = 3 A
VCE = 4 V, IC = 10 A
VCE = 10 V, IC = 500 mA
f = 1MHz
VCE = 10 V, IC = 500 m
Af = 1MHz
Min
Typ
Max
Unit
-
-
0.4
mA
-
-
0.7
mA
45
60
80
100
40
20
4
-
-
1
1
4
1.6
3
mA
20
-
-
3
-
-
V
V
V
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
RESISTIVE-LOAD-SWITCHING CHARACTERISTICS AT 25°C CASE TEMPERATURE
Symbol
ton
toff
22/10/2012
Ratings
Turn-on Time
Turn-off Time
Test Condition(s)
IC = 1 A , IB(on) = 100 mA ,
IB(off) = -100 mA
VBE(off) = -3.7 V , RL = 20 Ω
tp = 20 µs
dc < 2%
COMSET SEMICONDUCTORS
Min
-
Typ
Max
0.3
-
Unit
µs
-
1
-
2/3
BD245 – A – B – C
MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
R
S
T
Pin 1 :
Pin 2 :
Pin 3 :
Max.
15.20
1.90
4.60
3.10
0.35
5.35
20.00
19.60
0.95
4.80
1600
2.10
5.00
3.30
9.60
2.00
0.55
1.40
5.55
20.20
1.25
2.00
3.00
4.00
4.00
1.80
5.20
Base
Collector
Emitter
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
22/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3/3