BD245 – A – B – C NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD246, A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage (IC = -30mA) VCER Collector-Emitter Voltage (RBE = 100 Ω) VEBO Emitter-Base Voltage IC Collector Current IB PT TJ TS Base Current Power Dissipation Junction Temperature Storage Temperature Value BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C IC ICM Tmb = 25° C 45 60 80 100 55 70 90 115 5.0 10 15 3 80 -65 to +150 -65 to +150 Unit V V V A A Watts °C THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings Junction to Case Thermal Resistance Junction to free air Thermal Resistance 22/10/2012 COMSET SEMICONDUCTORS Value Unit 1.56 42 °C / W °C / W 1/3 BD245 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings ICES Collector- Emitter Cut-off Current ICEO Collector Cut-off Current Test Condition(s) VCE VCE VCE VCE = 55 V , VBE = 0 = 70 V , VBE = 0 = 90 V , VBE = 0 = 115 V , VBE = 0 VCE = 30 V , IB = 0 VCE = 60 V , IB = 0 IEBO Emitter Cut-off Current VE B = 5 V , IC = 0 VCEO Collector- Emitter I = 30 mA, IB = 0 Breakdown Voltage (*) C hFE DC Current Gain (*) VCE(SAT) VBE hfe |hfe| Collector-Emitter saturation Voltage (*) Base-Emitter Voltage(*) Small Signal forward Current Transfer ratio Small Signal forward Current Transfer ratio BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C VCE = 4 V, IC = 1 A VCE = 4 V, I C= 3 A VCE = 4 V, IC = 10 A IC = 3 A, IB = 300 mA IC = 10 A, IB = 2.5 A VCE = 4 V, IC = 3 A VCE = 4 V, IC = 10 A VCE = 10 V, IC = 500 mA f = 1MHz VCE = 10 V, IC = 500 m Af = 1MHz Min Typ Max Unit - - 0.4 mA - - 0.7 mA 45 60 80 100 40 20 4 - - 1 1 4 1.6 3 mA 20 - - 3 - - V V V - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% RESISTIVE-LOAD-SWITCHING CHARACTERISTICS AT 25°C CASE TEMPERATURE Symbol ton toff 22/10/2012 Ratings Turn-on Time Turn-off Time Test Condition(s) IC = 1 A , IB(on) = 100 mA , IB(off) = -100 mA VBE(off) = -3.7 V , RL = 20 Ω tp = 20 µs dc < 2% COMSET SEMICONDUCTORS Min - Typ Max 0.3 - Unit µs - 1 - 2/3 BD245 – A – B – C MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package DIMENSIONS (mm) Min. A B C D E F G H J K L M N O P R S T Pin 1 : Pin 2 : Pin 3 : Max. 15.20 1.90 4.60 3.10 0.35 5.35 20.00 19.60 0.95 4.80 1600 2.10 5.00 3.30 9.60 2.00 0.55 1.40 5.55 20.20 1.25 2.00 3.00 4.00 4.00 1.80 5.20 Base Collector Emitter Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 22/10/2012 [email protected] COMSET SEMICONDUCTORS 3/3