PNP BD684 TO3 (Temporary part number) SILICON DARLINGTON POWER TRANSISTORS PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-3 metal package. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO VCBO VEBO Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage IC Collector Current IBM PT TJ TStg Base current (peak value) Total power Dissipation Junction Temperature Storage Temperature IC ICM @ Tmb = 25°C Value Unit -140 -140 -5 -4 -6 -0.1 65 150 -65 to +150 V V V A W°C °C Value Unit 3.12 100 K/W K/W A THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air Temporary datasheet 23/10/2012 COMSET SEMICONDUCTORS 1|3 PNP BD684 TO3 (Temporary part number) ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , VCB= - 140 V ICBO Collector cut-off current ICEO IEBO Collector cut-off current Emitter cut-offcurrent Collector-Emitter saturation Voltage (*) VCE(SAT) hFE DC Current Gain (*) VBE hfe fhfe VF Base-Emitter Voltage (*) Small signal current gain Ut-off frequency Diode forward voltage Second-breakdown collector current Turn-on time Turn-off time I(SB) IE=0 , VCB= -1/2VCBOMAX Tj= 150°C IB=0 , VCE= -1/2VCEOMAX IC=0, VEB=-5 V IC=-1.5 A, IB=-6 Ma VCE=-3 V, IC=-500 mA VCE=-3 V, IC=-1,5 A VCE=-3 V, IC=-4 A VCE=-3 V, IC=-1,5 A VCE=-3 V, IC=-1,5 A, f= 1 MHz VCE=-3 V, IC=-1,5 A IF=-1,5 A VCE=-50 V, tP= 20ms,non rep. without heatsink -Icon= -1,5A, Ibon= -Iboff= -6mA VCC=30V ton toff (*) Measured under pulse conditions :tP <300µs, δ <2%. Temporary datasheet 23/10/2012 COMSET SEMICONDUCTORS Min Typ Max Unit - - -0,2 - - -1 - - -0,2 -5 mA mA - - -2 V 750 10 - 2000 750 60 -1,5 -2,5 - V kHz V -0,8 - - A - 0,8 4,5 2 8 µs mA 2|3 PNP BD684 TO3 (Temporary part number) MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) min A B C D F G N P R U V 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 Pin 1 : Pin 2 : Case : max 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Base Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com Temporary datasheet 23/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3