COMSET BD743C

SEMICONDUCTORS
BD743 – A – B – C
SILICON POWER TRANSISTORS
The BD743 series are NPN power transistors in a TO-220 envelope.
They are intended for use in power linear and switching application.
High current capability and high power dissipation.
PNP complements are BD744-A-B-C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage (IE=0)
VCEO
Collector-Emitter Voltage (IB=0)
VEBO
Emitter-Base Voltage (IC=0)
IC
Collector Current
ICM
Collector Peak Current
IB
Base Current
PT
Power Dissipation
TJ
Ts
Junction Temperature
Storage Temperature range
25/09/2012
Value
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
TC = 25°C
TA = 25°C
COMSET SEMICONDUCTORS
50
70
900
110
45
60
80
100
Unit
V
V
5
V
15
A
20
A
5
A
90
2
150
-65 to +150
W
°C
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SEMICONDUCTORS
BD743 – A – B – C
THERMAL CHARACTERISTICS
Symbol
RthJ-MB
RthJ-A
Ratings
Value
Unit
1.4
62.5
°C/W
°C/W
Junction To Case Thermal Resistance
Junction To Free Air Thermal Resistance
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO
Ratings
Collector Cutoff
Current
ICEO
Collector Cutoff
Current
IEBO
Emitter Cutoff
Current
VCEO
25/09/2012
Test Condition(s)
VBE= 0
VCB = 50 V
VBE= 0
VCB = 70 V
VBE= 0
VCB = 90 V
VBE= 0
VCB = 100 V
VBE= 0
VCB = 50 V
VBE= 0
VCB = 70 V
VBE= 0
VCB = 90 V
VBE= 0
VCB = 100 V
IB= 0
VCE = 30 V
IB= 0
VCE = 60 V
Min
Typ
Max
Unit
-
-
0.1
mA
-
-
5
mA
-
-
0.1
mA
-
-
0.5
mA
45
60
80
100
-
-
V
BD743
BD743A
TC= 25°C
BD743B
BD743C
BD743
TC=
125°C
VEB= 5 V, IC= 0
Collector-Emitter
Breakdown Voltage IC= 30 mA, IB= 0
(*)
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
COMSET SEMICONDUCTORS
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SEMICONDUCTORS
BD743 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
IC= 5 A, IB= 500 mA
VCE(SAT)
Collector-Emitter
saturation Voltage
(*)
IC= 15 A, IB=5 A
IC= 5 A, VCE= 4 V
VBE(on)
Base-Emitter Voltage
(*)
IC= 15 A, VCE= 4 V
IC= 1 A, VCE= 4 V
hFE
DC Current Gain (*)
IC= 5 A, VCE= 4 V
IC= 15 A, VCE= 4 V
Value
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
BD743
BD743A
BD743B
BD743C
-
-
Unit
1
V
-
-
3
-
-
1
V
-
-
3
V
40
-
-
20
-
150
5
-
-
-
SWITCHING TIMES
Symbol
td
tr
ts
tf
Ratings
Delay time
Rise time
Storage time
Fall time
Value
Test Condition(s)
IC= 5 A, Vbe= -4.2 V
IB(on) = -IB(off) = 0.5 A
RL = 6 Ω, tp = 20µs
Unit
Min
Typ
Max
-
20
350
500
400
-
ns
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
25/09/2012
COMSET SEMICONDUCTORS
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SEMICONDUCTORS
BD743 – A – B – C
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
0,46
2,50
4,98
2.49
0,70
Pin 1 :
Pin 2 :
Pin 3 :
Package
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Base
Collector
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
25/09/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
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