COMSET BDV64

BDV64-A-B-C
PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN.
Theyare designed for audio output stages and general amplifier and switching applications.
complementary is BDV65-A-B-C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
ICM
Collector Peak Current
IB
Base Current
26/09/2012
Value
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
COMSET SEMICONDUCTORS
Unit
-60
-80
-100
-120
-60
-80
-100
-120
V
V
-5.0
V
-12
A
-15
-0.5
A
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BDV64-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Tmb = 25° C
Power Dissipation
PT
Tmb = 25° C
Junction Temperature
TJ
Storage Temperature
TS
Value
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
Unit
125
W
3.5
150
°C
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Rthj-c
Rthj-a
Ratings
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
26/09/2012
Value
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
COMSET SEMICONDUCTORS
Unit
1
°C / W
35.7
2/4
BDV64-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICEO
Collector Cutoff
Current
VCE= -30 V, IB= 0
VCE= -40 V, IB= 0
VCE= -50 V, IB= 0
VCE= -60 V, IB= 0
IEBO
Emitter Cutoff Current
VBE= -5 V, IC= 0
IE= 0
Tj=25°C
ICBO
Collector Cutoff
Current
IE= 0
Tj=150°C
VCB= -60 V
VCB= -80 V
VCB= -100 V
VCB= -120 V
VCB= -30 V
VCB= -40 V
VCB= -50 V
VCB= -60 V
VCEO
Collector-Emitter
I = -30 mA, IB = 0
Breakdown Voltage (*) C
hFE
DC Current Gain (*)
VCE= -4 V, IC= -5 A
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= -5 A, IB= -20 mA
VBE
Base-Emitter
Voltage(*)
VCE= -4 V, IC= -5 A
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
Min
Typ
Max
Unit
-
-
-2
mA
-
-
-5
mA
-
-
-0.4
mA
-
-
-2
-60
-80
-100
-120
-
-
1000
-
-
-
-
-
-2
V
-
-
-2,5
V
V
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5 %
26/09/2012
COMSET SEMICONDUCTORS
3/4
BDV64-A-B-C
MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
R
S
T
Pin 1 :
Pin 2 :
Pin 3 :
Package
Max.
15.20
1.90
4.60
3.10
1600
2.10
5.00
3.30
9.60
2.00
0.55
1.40
5.55
0.35
5.35
20.00
19.60
0.95
20.20
1.25
2.00
3.00
4.00
4.00
1.80
5.20
4.80
Base
Collector
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
26/09/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
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