COMSET BDX18_12

BDX18 – BDX18N
PNP SILICON TRANSISTOR EPITAXIAL BASE
LF Large Signal Power Amplification
High Current Switching
Thermal Fatigue Inspection
Compliance to RoHS
Applications :
•
•
•
•
Series and shunt regulators
High Fidelity Amplifiers
Power-switching circuits
Solenoid drivers
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCER
Collector-Emitter
Voltage
VEBO
Collector-Emitter Voltage
VCBO
Emitter-Base Voltage
VCEX
Collector-Emitter
Voltage
IC
Collector Current
IB
Base Current
PT
TJ
Power Dissipation
Junction Temperature
TS
Storage Temperature
05/10/2012
RBE=100Ω
VBE=+1.5 V
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
@ TC = 25°
COMSET SEMICONDUCTORS
Value
Unit
-60
V
-70
-65
V
-7
V
-100
-70
-90
-70
V
V
-15
A
-7
A
117
W
-65 to +200
°C
1|3
BDX18 – BDX18N
THERMAL CHARACTERISTICS
Symbol
RthJ-C
Ratings
Value
Unit
1.5
°C/W
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS)
VCEX(SUS)
VCER(SUS)
ICEX
IEBO
VBE
VCE(SAT)
Ratings
Test Condition(s)
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter
Cutoff Current
Emitter-Base Cutoff
Current
Base-Emitter Voltage
(*)
Collector-Emitter
Saturation Voltage
IC=200 mA
IB=0
IC=-100 mA
VBE=1.5 V
IC=-200 mA
RBE=100 Ω
VCE=-90 V
VBE=1.5 V
VCE=-60 V, VBE=1.5 V
TCASE=150°C
VCE=-70 V
VBE=1.5 V
VCE=-60 V, VBE=1.5 V
TCASE=150°C
VEB=-7 V
IC=-4.0 A, VCE=-4.0V
IC=-4.0 A, IB=-0.4V
IC =-1A, VCE=-10 V
f=1 MHz
fT
Transition Frequency
h21E
Static Forward Current
VCE=-4.0 V, IC=-4.0 A
Transfer Ratio (*)
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
Min
Typ
Max
Unit
V
-60
-60
-90
-70
-70
-65
-
-
-
-
-
-
-5
V
V
BDX18
-10
mA
-
-
-5
-
-
-10
-
-
-5
mA
-
-
-1.8
V
-
-
-1.1
V
-
4
-
MHz
20
-
70
-
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit
05/10/2012
COMSET SEMICONDUCTORS
2|3
BDX18 – BDX18N
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
A
B
C
D
F
G
N
P
R
U
V
min
max
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
05/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3|3