COMSET BDX65_12

BDX65 – A – B – C
NPN SILICON DARLINGTON POWER TRANSISTOR
The BDX65, BDX65A, BDX65 and BDX65C are mounted in TO-3 metal package.
High current power darlingtons designed for power amplification and switching applications.
The complementary PNP are BDX64, BDX64A, BDX64B, BDX64C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
Collector-BaseVoltage
VEBO
Emitter-Base Voltage
IC
Collector Current
IB
PT
TJ
TS
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
IC(RMS)
ICM
@ TC = 25°
Unit
60
80
100
120
80
100
120
140
5.0
12
16
0.2
117
A
W
-55 to +200
°C
Value
Unit
1.5
°C/W
V
V
V
A
THERMAL CHARACTERISTICS
Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
24/10/2012
COMSET SEMICONDUCTORS
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BDX65 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Collector-Emitter Breakdown
Voltage (*)
IC=0.1 A
IB=0
L=25mH
ICEO
Collector Cutoff Current
VCE=30 V
VCE=40 V
VCE=50 V
VCE=60 V
IEBO
Emitter Cutoff Current
VBE=5 V
Collector-Base Cutoff Current
VCBO=60 V
VCBO=40 V
TCASE=200°C
VCBO=50 V
VCBO=80 V
TCASE=200°C
VCBO=100 V
VCBO=60 V
TCASE=200°C
VCBO=120 V
VCBO=70 V
TCASE=200°
VCEO(SUS)
ICBO
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=5.0 A
IB=20 mA
VF
Forward Voltage (pulse
method)
IF=3 A
VBE
Base-Emitter Voltage (*)
IC=5.0 A
VCE=3V
24/10/2012
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
COMSET SEMICONDUCTORS
Min
Typ
Max
Unit
60
80
100
120
-
-
-
V
1
mA
-
-
5.0
mA
-
-
0.4
-
-
3
-
-
0.4
-
-
3
-
-
0.4
-
-
3
-
-
0.4
-
-
-
3
-
-
2
V
-
1.8
-
V
-
-
2.5
V
2|4
BDX65 – A – B – C
Symbol
Ratings
Test Condition(s)
fhfe
Cut-off frequency
VCE=3 V
IC=5 A
fT
Transition Frequency
VCE=3 V
IC=5 A
f=1 MHz
VCE=3 V
IC=1 A
hFE
VCE=3 V
IC=5 A
D.C. current gain (*)
VCE=3 V
IC=10 A
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
Min
Typ
Max
Unit
-
50
-
kHz
-
7
-
MHz
-
3300
-
1000
-
-
-
3700
-
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
24/10/2012
COMSET SEMICONDUCTORS
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BDX65 – A – B – C
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
A
B
C
D
F
G
N
P
R
U
V
min
max
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
24/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
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