COMSET BT152-600R

SEMICONDUCTORS
BT152 Series
THYRISTORS
FEATURE
Glass passivated thyristors in a plastic TO220 package.
They are intended for use in applications requiring high
bidirectional blocking voltage capability and high thermal
cycling performance.
Typical applications include motor control, industrial and
domestic lighting, heating and static switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
BT152-400R BT152-600R BT152-800R
VDRM
VRRM
IT(RMS)
IT(AV)
ITSM
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
RMS on-state current
450
650
800
450
650
800
V
Average on-state current
Non-repetitive peak onstate current
20
A
13
A
200
A
PGM
Peak gate power
20
W
PG(AV)
Average gate power
0.5
W
Tstg
Storage temperature range
Operating junction
temperature
-40 to +150
°C
125
°C
Tj
THERMAL CHARACTERISTICS
Symbol
R∂j-mb
R∂JA
Ratings
Thermal resistance junction to mounting base
Thermal resistance junction to ambient
26/09/2012
COMSET SEMICONDUCTORS
Value
Unit
≤ 1.1
≤ 60
°C/W
1|3
SEMICONDUCTORS
BT152 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
450
650
800
450
650
800
-
-
32
1.5
80
60
mA
V
mA
mA
VDRM
Repetitive peak
off-state voltage
VRRM
Repetitive peak reverse
voltage
IGT
VGT
IL
IH
Gate trigger current
Gate trigger voltage
Latching current
Holding current
BT152-400R
BT152-600R
BT152-800R
BT152-400R
BT152-600R
BT152-800R
VD = 12 V; IT = 100 mA
VD = 12 V; IT = 100 mA
VD = 12 V; IGT = 100 mA
VD = 12 V; IGT = 100 mA
ID
Off-state current
VD = VDRM max; Tj = 125°C
-
-
1
mA
IR
Reverse current
VR = VRRM max; Tj = 125°C
-
-
1
mA
VT
On-state voltage
IT = 40 A
-
-
1.75
V
Min
Typ
Max
Unit
200
300
-
V/µs
-
2
-
µs
-
70
-
µs
V
DYNAMIC CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
dVD/dt
Critical rate of rise of
off-state voltage
tgt
Gate controlled
turn-on time
tq
Circuit commutated
Turn-off time
26/09/2012
Test Condition(s)
VDM = 67% VDRMmax
Tj = 125°C
Exponential waveform; gate
open circuit
ITM = 40 A; VD = VDRMmax
IG = 0.1 A; dIG/dt = 5 A/µs
VDM = 67% VDRMmax
Tj = 125°C
ITM = 50 A; VR = 25 V
RGK = 100 Ω
dITM/dt = 30 A/µs
dVD/dt = 50 V/µS
COMSET SEMICONDUCTORS
2|3
SEMICONDUCTORS
BT152 Series
MECHANICAL DATA CASE TO-220
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
26/09/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3|3