SEMICONDUCTORS BT152 Series THYRISTORS FEATURE Glass passivated thyristors in a plastic TO220 package. They are intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BT152-400R BT152-600R BT152-800R VDRM VRRM IT(RMS) IT(AV) ITSM Repetitive peak off-state voltage Repetitive peak reverse voltage RMS on-state current 450 650 800 450 650 800 V Average on-state current Non-repetitive peak onstate current 20 A 13 A 200 A PGM Peak gate power 20 W PG(AV) Average gate power 0.5 W Tstg Storage temperature range Operating junction temperature -40 to +150 °C 125 °C Tj THERMAL CHARACTERISTICS Symbol R∂j-mb R∂JA Ratings Thermal resistance junction to mounting base Thermal resistance junction to ambient 26/09/2012 COMSET SEMICONDUCTORS Value Unit ≤ 1.1 ≤ 60 °C/W 1|3 SEMICONDUCTORS BT152 Series ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit 450 650 800 450 650 800 - - 32 1.5 80 60 mA V mA mA VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IGT VGT IL IH Gate trigger current Gate trigger voltage Latching current Holding current BT152-400R BT152-600R BT152-800R BT152-400R BT152-600R BT152-800R VD = 12 V; IT = 100 mA VD = 12 V; IT = 100 mA VD = 12 V; IGT = 100 mA VD = 12 V; IGT = 100 mA ID Off-state current VD = VDRM max; Tj = 125°C - - 1 mA IR Reverse current VR = VRRM max; Tj = 125°C - - 1 mA VT On-state voltage IT = 40 A - - 1.75 V Min Typ Max Unit 200 300 - V/µs - 2 - µs - 70 - µs V DYNAMIC CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings dVD/dt Critical rate of rise of off-state voltage tgt Gate controlled turn-on time tq Circuit commutated Turn-off time 26/09/2012 Test Condition(s) VDM = 67% VDRMmax Tj = 125°C Exponential waveform; gate open circuit ITM = 40 A; VD = VDRMmax IG = 0.1 A; dIG/dt = 5 A/µs VDM = 67% VDRMmax Tj = 125°C ITM = 50 A; VR = 25 V RGK = 100 Ω dITM/dt = 30 A/µs dVD/dt = 50 V/µS COMSET SEMICONDUCTORS 2|3 SEMICONDUCTORS BT152 Series MECHANICAL DATA CASE TO-220 Pin 1 : Pin 2 : Pin 3 : Case : Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 26/09/2012 [email protected] COMSET SEMICONDUCTORS 3|3