COMSET BUX11_12

NPN BUX11
HIGH CURRENT, HIGH SPEED , HIGH
POWER TRANSISTOR
The BUX11 is silicon multiepitaxial planar NPN transistors in Jedec TO-3.
They are intended for use in switching and linear appications in military and industrial
equipments.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
VCEX
IC
ICM
IB
Pt
TJ
TStg
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IB = 0
IE = 0
IC = 0
VBE = -1.5V
tp = 10ms
@ TC = 25°
Value
Unit
200
250
7.0
250
20
25
4
150
200
-65 to +200
V
V
V
V
A
A
A
W
°C
°C
Value
Unit
1.17
°C/W
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
COMSET SEMICONDUCTORS
1/3
NPN BUX11
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICEO
Collector-Emitter Sustaining
Voltage (*)
Emitter-Base Breakdown
Voltage (*)
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain (*)
VCEO(SUS)
VEB0(SUS)
ES/B
Collector-Emitter saturation
Voltage (*)
Base-Emitter saturation Voltage
(*)
Second breakdown collector
current
Clamped ES/B Collector current
fT
Transition frequency
ton
Turn-on time
ts
Storage time
tf
File time
VCE(SAT)
VBE(SAT)
IS/B
Min
Typ
Max
Unit
200
-
-
V
IC=0A , IE=50 mA
7
-
-
V
VCE=160 V , IB=0A
VCE= VCEX , VBE= -1.5V
VCE= VCEX , VBE= -1.5V
Tcase = 125°C
VEB=5.0 V, IC=0
IC=6 A , VCE=2.0 V
IC=12 A , VCE=4.0 V
IC=6 A , IB=0.6 A
IC=12 A , IB=1.5 A
-
-
1.5
1.5
mA
-
-
6
mA
20
10
-
0.3
0.6
1
60
0.6
1.5
-
1.3
1.5
5
0.15
12
-
-
A
8
-
-
MHz
-
0.3
1.0
-
1.2
1.8
-
0.24
0.4
IC=200 mA
IC=12 A , IB=1.5 A
VCE=30 V , ts = 1s
VCE=140 V , ts = 1s
Vclamp=200 V , L=500 µH
VCE=15 V , IC=1 A
f=10 MHz
IC=12 A , IB=1.5 A
VCC=150 V
IC=12 A , VCC=150 V
IB1 = -IB2 =1.5 A
-
V
µs
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
25/10/2012
COMSET SEMICONDUCTORS
2/3
NPN BUX11
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
A
B
C
D
F
G
N
P
R
U
V
min
max
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
25/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3/3