COMSET BUX85

NPN BUX84 – BUX85
SILCON DIFFUSED POWER TRANSISTORS
The BUX84-BUX85 are NPN transistors mounted in Jedec TO-220 plastic package.
They are designed for high voltage, high speed power switching applications like converters,
inverters, switching regulators, motor control systems.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCESM
Collector-Emitter Voltage (open base)
IC
Collector Current
Value
IC
ICM
IB
Base Current
IBM
Base Current (peak value)
-IBM
Reverse Base Current (peak value) (1)
PD
Total Device Dissipation
TJ
Junction Temperature
TStg
Storage Temperature range
@ TC = 50°
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
400
450
800
1000
Unit
V
V
2
A
3
A
0.75
A
1
A
1
A
40
Watts
150
°C
-65 to +150
°C
Value
Unit
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
Thermal Resistance, Junction to mounting base
70
K/W
RthJ-mb
Thermal Resistance, Junction to ambient in free air
2.5
K/W
COMSET SEMICONDUCTORS
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NPN BUX84 – BUX85
ELECTRICAL CHARACTERISTICS (3)
TC=25°C unless otherwise noted
Symbol
ICES
Ratings
Test Condition(s)
Collector Cutoff Current(2)
VCEM= VCESmax
VBE=0V
BUX84
BUX85
VCEM= VCESmax
VBE=0V
Tj =125° C
BUX84
IEBO
Emitter Cutoff Current
VBE=5.0 V, IC=0
VCEOsust
Collector-Emitter sustaining IC=100 mA, IBoff= 0
Voltage
L=25mH
hFE
DC Current Gain
VCE(SAT)
Collector-Emitter saturation
Voltage
IC=0.1 A, VCE=5 V
VBE(SAT)
Base-Emitter saturation
Voltage
fT
Transition frequency
ton
Turn-on time
TS
Storage time
Tf
Fall Time
Tf
Fall Time
IC=0.3 A, IB=30 mA
IC=1 A, IB=0.2A
IC=1 A, IB=0.2 A
IC=0.5 A, VCE=10 V
f= 1MHz
IC=1 A, VCC=250 V
IB1=0.2A, IB2=0.4A
IC=1 A, VCC=250 V
IB1=0.2A, IB2=0.4
IC=1 A, VCC=250 V
IB1=0.2A, IB2=0.4
IC=1 A, VCC=250 V
IB1=0.2A, IB2=0.4
TC=95°
Min
Typ
Max
Unit
-
-
0.2
-
-
1.5
-
-
1
mA
400
450
-
-
V
30
50
-
-
-
-
0.8
-
-
1
-
-
1.1
4
20
-
-
0.3
0.5
-
2
3.5
-
0.4
-
-
-
1.4
mA
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
BUX84
BUX85
V
MHz
µs
(1) Turn off current
(2) Measured with a half-sinewave (curve tracer)
(3)Puls test : PW =300µs, Duty Cycle< 2%
26/10/2012
COMSET SEMICONDUCTORS
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NPN BUX84 – BUX85
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Max.
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
0,46
2,50
4,98
2.49
0,70
Pin 1 :
Pin 2 :
Pin 3 :
Case :
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Base
Collector
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
26/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
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