SEMICONDUCTORS BUZ31 POWER MOS TRANSISTORS FEATURE • • • • • Nchannel Enhancement mode Avalanche-rated TO-220 envelope Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VDS IDS IDM IAR EAR EAS VGS RDS(on) PT tJ tstg Ratings Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Periodic Limited by Tjmax Avalanche Energy, Single pulse ID = 14.5 A, VDD = 50 V, RGS = 25 Ω L = 1.42 mH, Tj = 25°C Gate-Source Voltage Drain-Source on Resistance Power Dissipation at Case Temperature TC= 25°C Operating Temperature Storage Temperature range Value Unit 200 14.5 58 14.5 9 V 200 20 0.2 95 -55 to +150 -55 to +150 A mJ V Ω W °C THERMAL CHARACTERISTICS Symbol Ratings RthJC Thermal Resistance, chip case RthJA Thermal Resistance, chip to ambient 01/10/2012 COMSET SEMICONDUCTORS Value <1.32 <75 Unit K/W 1/3 SEMICONDUCTORS BUZ31 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VDSS VGS(th) IDSS IGSS RDS(on) Ratings Test Condition(s) Drain-Source Breakdown Voltage Gate-threshold Voltage Zero Gate Voltage Drain Current Gate-Source leakage Current Drain-Source on Resistance Min Typ Max Unit ID= 250 µA, VGS= 0 V 200 - - V ID=1 mA, VGS= VDS VDS= 200 V, VGS= 0 V Tj= 25 °C VDS= 200 V, VGS= 0 V Tj= 125 °C VGS= 20 V, VDS= 0 V ID= 9 A, VGS= 10 V 2.1 3 4 V - 0.1 1 µA - 1 100 - 10 0.16 100 0.2 nA Ω Test Condition(s) Min Typ Max Unit VDS >2 * ID * RDS(on)max ID= 9 A 3 4.2 - S - 840 1120 - 180 270 - 95 12 50 150 60 150 20 75 200 80 Min Typ Max TC = 25°C - - 14.5 TC = 25°C - - 58 VGS = 0 V, IF = 29 A VR = 100 V, IF = IS diF/dt = 100 A/µs - 1.1 170 1.1 1.6 - DYNAMIC CHARACTERISTICS Symbol Ratings gfs Transconductance CISS Input Capacitance COSS Output Capacitance CRSS td(on) tr td(off) tf Reverse transfer Capacitance Turn-on Delay Time Rise time Turn-off Delay Time Fall Time VGS= 0 V, VDS= 25 V f= 1MHz VDD= 30 V, VGS= 10 V ID= 3 A, RGS= 50 Ω pF ns REVERSE DIODE Symbol IS ISM VSD Trr Qrr 01/10/2012 Ratings Test Condition(s) Inverse Diode Continuous Forward Current. Inverse diode direct current, pulsed. Inverse Diode Forward voltage Reverse Recovery Time Reverse Recovery Charge COMSET SEMICONDUCTORS Unit A V ns µC 2/3 SEMICONDUCTORS BUZ31 MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Pin 1 : Pin 2 : Pin 3 : Max. 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Gate Drain Source Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 01/10/2012 [email protected] COMSET SEMICONDUCTORS 3/3