Introducing g SiC Schottky y Diode QFN Package 2012 Agenda • Introduction to Cree Power • Schottky Diode QFN Package g g Applications pp • Benefits in LED and Lighting • Reference Design Test Data Copyright © 2012, Cree, Inc. pg. 2 Cree businesses Cree SiC/GaN Materials Copyright © 2011, Cree, Inc. pg. 3 Power and RF Components World’s leading manufacturer of silicon carbide-based diodes for A leading supplier of SiC and GaN power control RF devices and management. for wireless communications Solar Inverters Power Factor Correction Copyright © 2012, Cree, Inc. Broadband Amplifiers Cellular Infrastructure Industrial Motor Drivers pg. 4 Secure Military Communications Revolutionizing the power semiconductors 2002 2007 2009 2010 2011 First 600V commercial SiC Schottky diode Cree converts to 100mm wafers for Power Fraunhoefer Inst. Shows world’s best solar inverter efficiency, >98% with Cree SiC devices First 1700V Schottky diodes First SiC MOSFET 80mΩ, 1200V 2006 First 1200V SiC Schottky diode Copyright © 2011, Cree, Inc. pg. 5 Cree demonstrates first 150mm SiC wafer Cree Has Shipped 200 GVA of SiC Diodes • SiC diodes have significant penetration in applications where efficiency is essential – – – • Servers fro data centers Telecom power supplies Solar inverters SiC MOSFET MOSFETs enable bl even greater efficiency improvements Mega-VA of Cree SiC JBS Diodes 120,000 100,000 80,000 60 000 60,000 40,000 20,000 0 2005 2006 2007 2008 2009 2010 2011 Copyright © 2012, Cree, Inc. Cree SiC Diodes: Proven Quality and Reliability Cree SiC Diode Field Failure Rate Data since Jan. 2004 Product Device Hours FIT (fails/billion hrs) CSDxxx60 205,000,000,000 0.16 C3Dxxx60 81,000,000,000 0.09 C2Dxx120 46,000,000,000 1.35 Total 332,000,000,000 0.31 More than 10X lower than typical silicon Typical FIT rate for Si PiN diodes is ~ 5 300 billion device hours in the field with an industryleading FIT rate of only 0.31 Copyright © 2012, Cree, Inc. pg. 7 New “QFN” Package - C3D1P7060Q • Key Electrical Parameters Forward Rated Current: 1.7A @ TC < 150 ˚C Reverse Blocking Voltage: 600V Forward Voltage: 1.7V @ 100˚C Total Charge QC : 5.6 nC • Package Smallest SiC package in the market 3.3 x 3.3 x 1mm QFN Surface Mount • Benefits Higher driver efficiency = Higher Lm/W Lower thermals for diode diode, surrounding components Smaller footprint Copyright © 2012, Cree, Inc. pg. 8 Why Cree Schottky Diodes? Cree C3D1P7060Q in Light Bulb applications • Cree’s new C3D1P7060Q well suited for new NonIsolated lighting applications • Industry's smallest SiC package well suited for space constrained application such as Lighting • Improved Switching behavior reduces thermals and stress on MOSFET Copyright © 2011, Cree, Inc. pg. 9 Isolated Vs Non-Isolated LED Lighting Isolated Single Stage Flyback Non-Isolated Low-Side Buck Schottky diode Schottky diode • Transformer for isolation • Inductor with no isolation • Single Stage Flyback • Low Side Buck • Typical Eff. 80% • Typical Eff. 85% • Freewheeling Schottky output diode • Diode blocking DC voltage <200V, Si Schottky diodes ok • Freewheeling diode during MOSFET off time • Diode blocking DC voltage >400V, Si Schottky limit to 200V Copyright © 2012, Cree, Inc. pg. 10 Why use a SiC Schottky Diode? Reverse Current during Diode off and MOS on MOSFET ON • Simplified Circuit operation MOSFET Q is turned on, on current ramps up through inductor and LED string MOSFET Q is turned off and the freewheeling diode D conducts the current the current through the inductor and LED string Any reverse recover current from diode will flow into the MOSFET. Copyright © 2012, Cree, Inc. pg. 11 7W Non-Isolated LED Reference design 55mmx28mmx13mm Specification Items Min Typical Max Input AC Voltage 180Vac 220Vac 264Vac Output Voltage Tolerance 20Vdc 26Vdc 28Vdc Output current per string 250mA 270mA 285mA Output current tolerance +-5% Efficiency with Cree SiC Power Factor 82% 0.8 0.85 Controller LM3445 Dimming Phase cutting dimmable LED Cree XPE 10pcs [100mA to 400mA] Copyright © 2012, Cree, Inc. pg. 12 7W Cree Reference Design - Schematic • Driver Spec Input: 240Vac O t t 25Vd Output: 25Vdc, 270mA 270 A (7W) – 40W Incandescent I d t Replacement R l t Switching Freq: 125kHz Driver IC: TI/National LM3445 Copyright © 2012, Cree, Inc. pg. 13 7W Cree Reference Design - Test Data Efficiency Comparison • ~4% 4% efficiency ffi i improvement i Copyright © 2012, Cree, Inc. pg. 14 7W Cree Reference Design - Test Data Efficiency Comparison at different load conditions Copyright © 2012, Cree, Inc. pg. 15 7W Cree Reference Design - Test Data (cont.) • MOSFET and Diode Temperature Comparison • 12°C cooler on Diode • 17°C C cooler coo e o on MOSFET OS Copyright © 2012, Cree, Inc. pg. 16 7W Cree Reference Design - Test Data (cont.) Brown: Vds MOSFET X: 200V/div; Y: 5uS/div Blue: Ids MOSFET X: 500mA/div; Y: 5uS/div • MOSFET Comparison Cree Ids Max 698mA ON Semi Ids Max 1.32A • Lower MOSFET stress since less reverse recovery current from diode Copyright © 2012, Cree, Inc. pg. 17 Test Data Summary • C3D1P7060Q Schottky diode enables highest efficiency solutions 1. 2. CCM with low-side BUCK converter High output current LED>300mA • C3D1P7060Q Q Schottky y diode brings g system y benefits 1. 2. 3. 4. Small 3.3 x 3.3 mm footprint saves space Efficiency improves 4-5% Thermal reduction 15-20C can shrink heatsink,, prolong p g life of caps p Reduce MOSFET current rating (lower cost part) Copyright © 2012, Cree, Inc. pg. 18 Conclusion • C3D1P7060Q Schottky diode enables higher Lm/W 1. Best fit topology • • CCM with low-side BUCK converter High output current LED>300mA • System benefits 1. Space savings/higher density • 2. 3. Small 3.3 x 3.3 mm footprint Efficiency improves 2-5% Improved reliability • • • SiC more reliable than Si Thermal reduction 15-20C can shrink heatsink, prolong life of caps R d Reduce MOSFET currentt rating ti (lower (l costt part) t) Copyright © 2012, Cree, Inc. pg. 19