DINTEK DTB3055

DTB3055
www.din-tek.jp
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
30
RDS(on) () at VGS = 10 V
0.025
RDS(on) () at VGS = 4.5 V
0.038
ID (A)
• 100 % Rg and UIS Tested
7
Configuration
Single
D
SOT-223
G
D
G
D
S
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VDS
LIMIT
Drain-Source Voltage
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
ID
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
L = 0.1 mH
TC = 25 °C
Operating Junction and Storage Temperature Range
UNIT
V
7
4.5
IS
5
IDM
31
IAS
10
EAS
5
PD
TC = 125 °C
30
4
1.3
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
110
RthJF
38
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB
Mountb
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
1
°C/W
DTB3055
www.din-tek.jp
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 μA
30
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
IGSS
Gate-Source Leakage
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward
Transconductanceb
RDS(on)
-
-
± 100
VDS = 30 V
-
-
1
VGS = 0 V
VDS = 30 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 30 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS5 V
10
-
-
VGS = 10 V
ID = 6 A
-
0.018
0.025
VGS = 4.5 V
ID = 4.9 A
-
0.032
0.038
VGS = 10 V
ID = 6 A, TJ = 125 °C
-
-
0.054
VGS = 10 V
ID = 6 A, TJ = 175 °C
-
-
0.064
-
21
-
-
295
370
VDS = 15 V, ID = 5 A
gfs
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
-
67
85
Reverse Transfer Capacitance
Crss
-
25
35
Total Gate Chargec
Qg
-
6
10
Gate-Source
Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
VDS = 15 V, f = 1 MHz
VGS = 0 V
VGS = 10 V
VDS = 15 V, ID = 6 A
-
1.2
-
-
1
-
f = 1 MHz
3.0
6.65
11
-
6
9
VDD = 15 V, RL = 2.5 
ID  6 A, VGEN = 10 V, Rg = 1 
-
12
18
-
13
20
-
8
12
td(on)
tr
td(off)
tf
pF
nC

ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 3 A, VGS = 0 V
-
-
31
A
-
0.8
1.1
V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTB3055
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
40
VGS = 10 V thru 5 V
32
ID - Drain Current (A)
ID - Drain Current (A)
32
24
VGS = 4 V
16
24
16
TC = 25 °C
8
8
TC = 125 °C
VGS = 3 V
0
0
0
2
4
6
8
0
10
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
30
10
0.15
TC = - 55 °C
24
0.12
TC = 25 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
TC = - 55 °C
18
TC = 125 °C
12
0.09
VGS = 4.5 V
0.06
0.03
6
VGS = 10 V
0.00
0
0.0
1.2
2.4
3.6
ID - Drain Current (A)
4.8
0
6.0
8
16
24
32
40
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
500
10
400
8
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
ID = 6 A
Ciss
300
200
100
Coss
6
VDS = 15 V
4
2
Crss
0
0
0
6
12
18
24
30
0
2
4
6
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
3
8
10
DTB3055
www.din-tek.jp
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
2.0
1.7
TJ = 150 °C
IS - Source Current (A)
1.4
VGS = 4.5 V
1.1
1
0.1
TJ = 25 °C
0.01
0.8
0.5
- 50 - 25
0.001
0
25
50
75
100
125
150
0.0
175
0.2
0.4
0.6
0.8
1.0
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.25
0.5
0.20
0.2
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
10
VGS = 10 V
0.15
0.10
1.2
- 0.1
ID = 5 mA
- 0.4
ID = 250 μA
TJ = 150 °C
0.05
- 0.7
TJ = 25 °C
- 1.0
- 50 - 25
0.00
0
2
4
6
8
10
0
25
50
75
100
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
40
ID = 1 mA
VDS - Drain-to-Source Voltage (V)
RDS(on) - On-Resistance (Normalized)
ID = 6 A
38
36
34
32
30
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
4
125
150
175
DTB3055
www.din-tek.jp
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID - Drain Current (A)
10
100 μs
1
1 ms
Limited by RDS(on)*
10 ms
0.1
100 ms
1s, 10s, DC
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
Single Pulse
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
5
100
1000
DTB3055
www.din-tek.jp
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
6
Package Information
www.din-tek.jp
SOT-223 (HIGH VOLTAGE)
B
D
A
3
0.08 (0.003)
B1
C
0.10 (0.004) M C B M
A
4
3
H
E
0.20 (0.008) M C A M
L1
1
2
3
4xL
3xB
e
θ
0.10 (0.004) M C B M
e1
4xC
INCHES
MILLIMETERS
DIM.
MIN.
MAX.
MIN.
MAX.
A
1.55
1.80
0.061
0.071
B
0.65
0.85
0.026
0.033
B1
2.95
3.15
0.116
0.124
C
0.25
0.35
0.010
0.014
D
6.30
6.70
0.248
0.264
E
3.30
3.70
0.130
e
2.30 BSC
e1
4.60 BSC
0.181 BSC
H
6.71
7.29
0.264
L
0.91
-
0.036
L1
θ
0.061 BSC
-
0.146
0.0905 BSC
0.287
0.0024 BSC
10'
ECN: S-82109-Rev. A, 15-Sep-08
DWG: 5969
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension do not include mold flash.
4. Outline conforms to JEDEC outline TO-261AA.
1
-
10'
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1