DTB6035 www.din-tek.jp N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 7 0.04 at V 7 GS = 4.5 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC D SOT-223 D G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)a TA = 25 °C TA = 70 °C IDM IAS EAS Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa ID TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range 10 s Steady State 60 ± 20 7 6.0 5.0 6.1 40 15 11 3.3 1.7 2.3 1.2 - 55 to 175 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical 36 75 17 Maximum 45 90 20 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. 1 DTB6035 www.din-tek.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 20 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Diode Forward Voltage VDS ≥ 5 V, VGS = 10 V a Typ. Max. Unit V 3 nA µA 40 A VGS = 10 V, ID = 6.0 A 0.02 VGS = 10 V, ID = 6.0 A, TJ = 125 °C 0.031 0.037 VGS = 10 V, ID = 6.0 A, TJ = 175 °C 0.039 0.047 0.04 0.028 VGS = 4.5 V, ID = 5.1 A 0.035 gfs VDS = 15 V, ID = 6.0 A 25 VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 18 27 VDS = 30 V, VGS = 10 V, ID = 6.0 A 3.4 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance VGS = 0.1 V, f = 5 MHz 0.5 td(on) Turn-On Delay Time VDD = 30 V, RL = 30 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 5.3 IF = 1.7 A, dI/dt = 100 A/µs 1.4 2.4 10 20 10 20 25 50 12 24 50 80 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 VGS = 10 V thru 5 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 4V 16 8 24 16 TC = 150 °C 8 25 °C 3V 0 0.0 - 55 °C 0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 2 3.0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 5 DTB6035 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1400 0.06 1200 0.05 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) www.din-tek.jp 0.04 VGS = 4.5 V 0.03 VGS = 10 V 0.02 1000 800 600 400 Coss 0.01 200 0.00 0 0 8 16 32 24 Crss 0 40 20 10 40 50 60 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 2.2 ID = 6.0 A ID = 6.0 V 2.0 VGS = 10 V 8 VDS = 30 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 30 6 4 1.8 1.6 1.4 1.2 1.0 2 0.8 0 0 4 8 16 12 0.6 - 50 20 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 50 0.06 TJ = 175 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.05 TJ = 25 °C 10 0.04 ID = 6.0 A 0.03 0.02 0.01 1 0.00 0.00 0.5 1.0 1.5 2.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 2.5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 3 DTB6035 www.din-tek.jp 0.8 50 0.4 40 0.0 30 Power (W) VGS(th) Variance (V) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted ID = 250 µA - 0.4 - 0.8 20 10 - 1.2 - 50 0 0 - 25 25 50 75 100 125 150 175 0.01 0.1 1 TJ - Temperature (°C) 10 100 1000 Time (s) Single Pulse Power Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 75 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10 -2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 4 1 10 3DFNDJH,QIRUPDWLRQ www.din-tek.jp SOT-223 (HIGH VOLTAGE) B D A 3 0.08 (0.003) B1 C 0.10 (0.004) M C B M A 4 3 H E 0.20 (0.008) M C A M L1 1 2 3 4xL 3xB e θ 0.10 (0.004) M C B M e1 4xC MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 1.55 1.80 0.061 0.071 B 0.65 0.85 0.026 0.033 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 e 2.30 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 L 0.91 - 0.036 L1 θ 0.061 BSC - 0.146 0.0905 BSC 0.287 0.0024 BSC 10' - 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. 1 Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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