D5$ www.daysemi.jp N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 6 0.025 at VGS = 2.5 V • Halogen-free Qg (Typ.) • TrenchFET® Power MOSFET RoHS 10 nC 6 COMPLIANT APPLICATIONS • Load Switches for Portable Devices D D G G S D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Continuous Source-Drain Diode Current Soldering Recommendations (Peak Temperature)e, f ID IDM IS PD TJ, Tstg Limit 20 ± 12 Unit V 6a 6a 6a, b, c 6a, b, c 30 5.2 2.1b, c 6.3 4 2.5b, c 1.6b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA 50 t≤5s 40 Maximum Junction-to-Ambienta, c, d °C/W RthJF 15 Maximum Junction-to-Foot (Drain) Steady State 20 Notes: a. Package limited, TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 95 °C/W. e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. 1 D5$ www.daysemi.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS /TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 25 mV/°C - 4.0 0.6 1.5 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 4.5 V µA A 30 VGS = 4.5 V, ID = 8.3 A 0.016 0.020 VGS = 2.5 V, ID = 4.5 A 0.020 0.025 VDS = 10 V, ID = 8.3 A 45 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 1200 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 8.3 A VDS = 10 V, VGS = 4.5 V, ID = 8.3 A td(off) 22 33 10 15 2.5 f = 1 MHz VDD = 10 V, RL = 1.5 Ω ID ≅ 6.7 A, VGEN = 4.5 V, Rg = 1 Ω Ω 2.4 15 25 10 15 35 55 tf 12 20 td(on) 10 15 tr td(off) nC 1.7 td(on) tr pF 220 100 VDD = 10 V, RL = 1.5 Ω ID ≅ 6.7 A, VGEN = 10 V, Rg = 1 Ω tf 12 20 25 40 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 5.2 30 IS = 6.7 A, VGS = 0 V IF = 6.7 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 20 40 ns 10 20 nC 10 10 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 D5$ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 30 VGS = 5 thru 2.5 V TC = - 55 °C 8 I D - Drain Current (A) I D - Drain Current (A) 24 18 VGS = 2 V 12 6 TC = 125 °C 4 2 6 TC = 25 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 VGS = 1.5 V 2.0 2.5 0 0.0 3.0 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 1500 0.026 0.024 Ciss 0.022 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1200 0.020 VGS = 2.5 V 0.018 0.016 VGS = 4.5 V 0.014 900 600 Coss 300 0.012 Crss 0 0.010 0 6 12 18 24 0 30 5 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 1.6 ID = 8.3 A ID = 8.3 A 8 VGS = 4.5 V, 2.5 V VDS = 10 V 6 VDS = 16 V 4 2 (Normalized) 1.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 1.2 1.0 0.8 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 D5$ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.050 100 ID = 8.3 A TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.040 TJ = 25 °C 10 1 0.0 0.030 TJ = 125 °C 0.020 TJ = 25 °C 0.010 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) 5 50 40 ID = 250 µA Power (W) 1.2 V GS(th) (V) 4 On-Resistance vs. Gate-to-Source Voltage 1.4 1.0 0.8 30 20 10 0.6 - 25 0 25 50 75 100 125 0 0.001 150 0.01 1 10 Single Pulse Power Threshold Voltage 100 Limited by RDS(on)* 100 µs 10 ID - Drain Current (A) 0.1 Time (s) TJ - Temperature (°C) 1 ms 1 10 ms 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 100 ms 1s 10 s DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 3 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 - 50 2 100 600 D5$ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 18 8 15 Power (W) ID - Drain Current (A) 6 12 9 Package Limited 4 6 2 3 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 D5$ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 1 10-1 Square Wave Pulse Duration (s) 100 10 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6 1 10 Package Information Package outline - SOT89 D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches Min Max Min Max A 1.40 1.60 0.550 0.630 B 0.44 0.56 0.017 B1 0.36 0.48 C 0.35 D D1 DIM Millimeters Inches Min Max Min Max E 2.29 2.60 0.090 0.102 0.022 E1 2.13 2.29 0.084 0.090 0.014 0.019 e 1.50 BSC 0.059 BSC 0.44 0.014 0.017 e1 3.00 BSC 0.118 BSC 4.40 4.60 0.173 0.181 H 3.94 4.25 0.155 0.167 1.62 1.83 0.064 0.072 L 0.89 1.20 0.035 0.047 Note: Controlling dimensions are in millimeters. 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