DINTEK DTL9503

DT-
www.daysemi.jp
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)
0.007 at VGS = - 10 V
± 75
RoHS*
0.010 at VGS = - 4.5 V
± 75
COMPLIANT
VDS (V)
- 30
• Compliant to RoHS Directive 2002/95/EC
a
Available
S
TO-220AB
TO-263
G
G
D S
Top View
G D S
D
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 125 °C
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Power Dissipation
L = 0.1 mH
TC = 25 °C (TO-220AB and TO-263)
TA = 25 °C (TO-263)c
Operating Junction and Storage Temperature Range
Symbol
Limit
Unit
VGS
± 20
V
ID
-
75a
- 65
IDM
- 240
IAR
- 60
EAR
180
PD
187d
3.75
A
mJ
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
PCB Mount (TO-263)c
Free Air (TO-220AB)
Junction-to-Case
RthJA
RthJC
40
62.5
°C/W
0.8
Notes:
a. Package limited.
b. Duty cycle  1 %.
c. When mounted on 1" square PCB (FR-4 material).
d. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
VGS(th)
VDS = VGS, ID = - 250 µA
-1
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = - 30 V, VGS = 0 V
-1
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V, TJ = 125 °C
- 50
VDS = - 30 V, VGS = 0 V, TJ = 175 °C
- 250
Parameter
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
On-State Drain Currenta
VDS = -5 V, VGS = - 10 V
ID(on)
± 100
- 120
VGS = - 10 V, ID = - 30 A
Drain-Source On-State Resistancea
RDS(on)
Forward
0.010
VGS = - 10 V, ID = - 30 A, TJ = 175 °C
0.013
VDS = - 15 V, ID = - 75 A
nA
µA
0.007
VGS = - 10 V, ID = - 30 A, TJ = 125 °C
gfs
V
A
0.0055
VGS = - 4.5 V, ID = - 20 A
Transconductancea
-3
0.008

0.010
20
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reversen Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
c
9000
VGS = 0 V, VDS = - 25 V, f = 1 MHz
1565
pF
715
160
VDS = - 15 V, VGS = - 10 V, ID = - 75 A
240
nC
32
Gate-Drain Charge
Qgd
30
Turn-On Delay Timec
td(on)
25
40
225
360
150
240
210
340
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
Continuous Current
tr
td(off)
VDD = - 15 V, RL = 0.2 
ID  - 75 A, VGEN = - 10 V, Rg = 2.5 
tf
Characteristicsb
(TC = 25 °C)
IS
- 75
Pulsed Current
ISM
- 240
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
ns
IF = - 75 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = - 75 A, dI/dt = 100 A/µs
A
- 1.2
- 1.5
V
55
100
ns
2.5
5
A
0.07
0.25
µC
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
200
250
TC = - 55 °C
VGS = 10 V thru 6 V
160
I D - Drain Current (A)
I D - Drain Current (A)
200
5V
150
100
4V
25 °C
125 °C
120
80
40
50
3V
0
0
0
2
4
6
8
0
10
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
6
0.030
150
TC = - 55 °C
RDS(on) - On-Resistance ()
g fs - Transconductance (S)
0.025
120
25 °C
125 °C
90
60
30
0.015
VGS = 4.5 V
0.010
VGS = 10 V
0.005
0
0
20
0
40
60
80
0
100
20
40
60
80
100
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
120
20
10 000
VGS - Gate-to-Source Voltage (V)
12 000
C - Capacitance (pF)
0.020
Ciss
8000
6000
4000
Coss
2000
Crss
0
0
VDS = 15 V
ID = 75 A
16
12
8
4
0
6
12
18
24
30
0
50
100
150
200
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
250
300
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.8
100
VGS = 10 V
ID = 30 A
TJ = 150 °C
I S - Source Current (A)
1.2
(Normalized)
RDS(on) - On-Resistance
1.5
0.9
0.6
10
TJ = 25 °C
0.3
0
- 50
1
- 25
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
45
ID = 250 µA
IAV (A) at TA = 25 °C
40
V DS (V)
I Dav (a)
100
10
IAV (A) at TA = 150 °C
1
30
0.1
0.00001
0.0001
0.001
0.01
0.1
tin (s)
Avalanche Current vs. Time
4
35
1
25
- 50
- 25
0
25
50
75
100
125
TJ - Junction Temperature (°C)
Drain Source Breakdown
vs. Junction Temperature
150
175
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THERMAL RATINGS
1000
90
75
100 µs
I D - Drain Current (A)
I D - Drain Current (A)
100
60
45
30
Limited
by RDS(on)*
10
10 ms
100 ms
DC
1
TC = 25 °C
Single Pulse
15
0
0
25
50
75
100
125
150
175
0.1
0.1
TC - Case Temperature (°C)
1
* VGS
Maximum Avalanche and Drain Current
vs. Case Temperature
1 ms
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
5
Package Information
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
J(1)
2.41
2.92
0.095
0.115
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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