DINTEK DTL9604

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N-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
60
RDS(on) ()
ID (A)a
0.0027 at VGS = 10 V
60
0.0033 at VGS = 6 V
60
0.0048 at VGS = 4.5 V
60
Qg (Typ.)
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Low Qg for High Efficiency
27.5 nC
TO-220AB
APPLICATIONS
• Primary Side Switch
D
•
•
•
•
•
•
G
POL
Synchronous Rectifier
DC/DC Converter
Amusement System
Industrial
LED Backlighting
S
G D S
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
Limit
60
± 20
60a
60a
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
L =0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
35.8b, c
IDM
28.6b, c
350
5.6b, c
40
80
104
66.6
IAS
EAS
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)
A
60a
IS
TA = 70 °C
Operating Junction and Storage Temperature Range
V
ID
TA = 70 °C
Pulsed Drain Current (60 µs Pulse Width)
Unit
mJ
6.25b, c
4b, c
- 55 to 150
260
W
°C
THERMAL RESISTANCE RATINGS
t  10 s
Symbol
RthJA
Steady State
RthJC
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Typical
15
0.9
Maximum
20
1.2
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
60
VGS(th) Temperature Coefficient
VGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Parameter
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
-6
1
Forward Transconductancea
RDS(on)
gfs
2.5
V
± 100
nA
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 55 °C
10
VDS 5 V, VGS = 10 V
30
VGS = 10 V, ID = 20 A
Drain-Source On-State Resistancea
V
mV/°C
µA
A
0.0022
0.0027
VGS = 6 V, ID = 20 A
0.0027
0.0033
VGS = 4.5 V, ID = 20 A
0.0037
0.0048
VDS = 15 V, ID = 20 A
82

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
4365
VDS = 30 V, VGS = 0 V, f = 1 MHz
pF
3270
177
VDS = 30 V, VGS = 10 V, ID = 20 A
VDS = 30 V, VGS = 4.5 V, ID = 20 A
63.5
96
27.5
42
12
5.9
1.2
2.4
14
28
11
22
33
60
tf
11
22
td(on)
47
90
97
180
32
60
13
26
f = 1 MHz
td(on)
tr
td(off)
tr
td(off)
nC
VDD = 30 V, RL = 3 
ID  10 A, VGEN = 10 V, Rg = 1 
VDD = 30 V, RL = 3 
ID  10 A, VGEN = 4.5 V, Rg = 1 
tf
0.4

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
60
100
IS = 5 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.73
1.1
V
79
120
ns
88
135
nC
32
47
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100
VGS = 10 V thru 4 V
80
ID - Drain Current (A)
ID - Drain Current (A)
80
60
40
VGS = 3 V
20
TC = 25 °C
60
40
20
TC = 125 °C
VGS = 2 V
0
0.0
0.5
1.0
1.5
2.0
0
2.5
TC = - 55 °C
1.0
0.0
VDS - Drain-to-Source Voltage (V)
3.0
4.0
5.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
7000
0.0050
5600
C - Capacitance (pF)
0.0040
RDS(on) - On-Resistance (Ω)
2.0
VGS = 4.5 V
0.0030
0.0020
VGS = 10 V
Ciss
4200
Coss
2800
1400
0.0010
Crss
0.0000
0
20
40
60
ID - Drain Current (A)
80
0
100
0
12
48
60
Capacitance
10
2.0
ID = 20 A
ID = 20 A
8
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
36
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
VDS = 30 V
6
VDS = 20 V
VDS = 40 V
4
2
0
24
0
13
26
39
Qg - Total Gate Charge (nC)
Gate Charge
52
65
VGS = 10 V
1.7
1.4
VGS = 4.5 V
1.1
0.8
0.5
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
3
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.015
ID = 20 A
0.012
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.009
0.006
TJ = 125 °C
0.003
0.001
0.0
0.2
0.4
0.6
0.8
1.0
0.000
1.2
TJ = 25 °C
0
0.5
200
0.2
160
- 0.1
120
ID = 5 mA
- 0.4
- 1.0
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
ID Limited
1 ms
10
ID - Drain Current (A)
8
10
80
TJ - Temperature (°C)
10 ms
Limited by RDS(on)*
1
100 ms
1s
0.1
10 s
TA = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS Limited
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
6
40
ID = 250 μA
- 50
4
On-Resistance vs. Gate-to-Source Voltage
Power (W)
VGS(th) - Variance (V)
Source-Drain Diode Forward Voltage
- 0.7
2
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
DC
100
10
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
160
ID - Drain Current (A)
128
96
Package Limited
64
32
0
0
25
50
75
100
125
TC - Case Temperature (°C)
150
125
3.0
100
2.4
75
1.8
Power (W)
Power (W)
Current Derating*
50
1.2
0.6
25
0.0
0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 54 °C/W
0.02
3. T JM - T A = PDMZthJA(t)
Single Pulse
0.01
0.0001
0.001
0.01
4. Surface Mounted
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.01
0.0001
0.1
0.05
0.02
Single Pulse
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
6
1
10
Package Information
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
J(1)
2.41
2.92
0.095
0.115
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
1
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