DTM4483S www.din-tek.jp P-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.068 at VGS = - 10 V - 4.6 0.110 at VGS = - 4.5 V - 3.4 Qg (Typ.) 4.6 SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS VKA (V) VF (V) Diode Forward Voltage ID (A)a 30 0.44 V at 1 A 2 • Battery Management in Notebook PC • Non-synchronous Buck Converter in HDD S K D A SO-8 A 1 8 K A 2 7 K S 3 6 D G 4 5 D G Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET) Symbol VDS VKA VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C - 3.8b, c - 3b, c - 20 -2 IS - 1.4b, c - 1.4b -2 2.75 1.75 IF IFM Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (MOSFET and Schottky) ID IDM Pulsed Drain Current (MOSFET) (t = 300 µs) Continuous Source Current (MOSFET Diode Conduction) Limit - 30 - 30 ± 20 - 4.6 - 3.6 TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD 1.75b, c 1.10b, c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET and Schottky)b, c, d Maximum Junction-to-Foot (Drain) (MOSFET and Schottky) Symbol RthJA RthJF Typical 60 35 Maximum 71.5 45 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on FR4 board. c. t 10 s. d. Maximum under steady state conditions is 120 °C/W. 1 DTM4483S www.din-tek.jp MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V - 20 mV/°C 3.9 -1 - 1.8 - 2.5 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 75 °C - 10 VDS - 5 V, VGS = - 10 V -5 µA A VGS = - 10 V, ID = - 3.6 A 0.055 0.068 VGS = - 4.5 V, ID = - 2.8 A 0.092 0.110 VDS = - 15 V, ID = - 3.6 A 6.5 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 350 VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = - 15 V, VGS = - 10 V, ID = - 5 A VDS = - 15 V, VGS = - 4.5 V, ID = - 5 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time f = 1 MHz VDD = - 15 V, RL = 3 ID - 5 A, VGEN = - 4.5 V, Rg = 1 7 1.3 1.5 7.3 14.5 28 50 73 140 24 8 16 td(on) 6 12 VDD = - 15 V, RL = 3 ID - 5 A, VGEN = - 10 V, Rg = 1 tf Fall Time 14 12 td(off) Turn-Off Delay Time 9 4.6 tf tr Rise Time pF nC 2.1 td(on) Turn-On Delay Time 75 63 9 18 12 24 6 12 ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD a - 4.6 - 20 IS = - 2 A, VGS = 0 V A - 0.83 - 1.2 Body Diode Reverse Recovery Time trr 12 24 ns Body Diode Reverse Recovery Charge Qrr 6 12 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. 2 TC = 25 °C IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C 8 4 V ns DTM4483S www.din-tek.jp SCHOTTKY SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance CT Test Conditions IF = 1 A IF = 1 A, TJ = 125 °C VR = 30 V VR = 30 V, TJ = 75 °C VR = 30 V, TJ = 125 °C VR = 15 V Min. Typ. 0.36 0.29 0.03 0.6 7.5 5.3 Max. 0.44 0.35 0.2 5 60 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 3 DTM4483S www.din-tek.jp MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 3.0 2.5 VGS = 10 V thru 5 V ID - Drain Current (A) ID - Drain Current (A) 16 12 VGS = 4 V 8 4 2.0 3.0 4.0 0 0.0 5.0 1.0 TC = - 55 °C 2.0 3.0 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5.0 600 0.150 480 0.120 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = 25 °C TC = 125 °C 0 1.0 1.5 1.0 VGS = 3 V 0.0 2.0 0.090 0.060 VGS = 10 V Ciss 360 240 0.030 120 0.000 0 Coss Crss 0 2 4 6 ID - Drain Current (A) 8 10 0 6 12 On-Resistance vs. Drain Current and Gate Voltage 30 1.5 ID = 5 A ID = 3.6 A 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 24 Capacitance 10 VDS = 15 V 6 VDS = 10 V VDS = 20 V 4 2 0 0 2 4 6 8 Qg - Total Gate Charge (nC) Gate Charge 4 18 VDS - Drain-to-Source Voltage (V) 10 VGS = 10 V 1.3 VGS = 4.5 V 1.1 0.9 0.7 0.5 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 150 DTM4483S www.din-tek.jp MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.5 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 3.6 A 1 TJ = 150 °C TJ = 25 °C 0.1 0.01 0.4 0.3 0.2 TJ = 125 °C 0.1 0.001 0.0 TJ = 25 °C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 10 50 0.4 40 ID = 5 mA Power (W) 0.2 0 - 0.2 - 0.4 - 50 30 20 10 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) Threshold Voltage 0.1 Time (s) 1 10 Single Pulse Power, Junction-to-Ambient 100 IDM Limited 10 ID - Drain Current (A) VGS(th) - Variance (V) ID = 250 μA ID Limited 1 ms 1 10 ms Limited by RDS(on)* 100 ms 0.1 TC = 25 °C Single Pulse 0.01 0.01 1s 10 s DC BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 5 DTM4483S www.din-tek.jp MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 6 ID - Drain Current (A) 4 3 2 1 0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 3.5 1.25 2.8 1.00 2.1 0.75 Power (W) Power (W) Current Derating* 1.4 0.7 0.50 0.25 0.0 0.00 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 6 DTM4483S www.din-tek.jp MOSFETS TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 7 DTM4483S www.din-tek.jp SCHOTTKY TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.01 I F - Forward Current (A) I R - Reverse Current (mA) 0.1 20 V 0.001 30 V 0.0001 1 TJ = 150 °C TJ = 25 °C 0.1 0.01 0.00001 0.001 0.000001 0 25 50 125 75 100 TJ - Junction Temperature (°C) 0 150 0.1 CT - Junction Capacitance (pF) 500 400 300 200 100 0 6 12 18 VKA - Reverse Voltage (V) Capacitance 8 0.3 Forward Voltage Drop Reverse Current vs. Junction Temperature 0 0.2 0.4 VF - Forward Voltage Drop (V) 24 30 0.5 Package Information www.din-tek.jp SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. 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