DT. www.daysemi.jp N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) () ID 0.075 at VGS = 10 V (A)a 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 7.3 nC APPLICATIONS • DC/DC Conversion - Notebook System Power D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C TA=70°C Avalanche Current C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Lead Maximum 80 Units V ±30 V A 2.9 IDM 18 IAR 16 A EAR 12.8 mJ 2 PD Junction and Storage Temperature Range S2 3.5 ID Pulsed Drain Current C Repetitive avalanche energy L=0.1mH TA=25°C Power Dissipation B TA=70°C G2 S1 Top View Continuous Drain Current D2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W DT. www.daysemi.jp Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±30V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 3.5 VGS=10V, VDS=5V 18 TJ=55°C gFS Forward Transconductance VDS=5V, ID=3.5A IS=1A,VGS=0V TJ=125°C VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current ISM Pulsed Body-diode Current 100 nA 4.2 5 V 62 75 113.0 135 A Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.77 S 1 V 2.5 A 18 A 510 640 770 pF 28 40 52 pF 12 20 30 pF 0.9 1.8 2.7 Ω nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge 8 11 13 Qg(4.5V) Total Gate Charge 4 5.5 7 Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=40V, ID=3.5A mΩ 15 C DYNAMIC PARAMETERS Ciss Input Capacitance µA 5 VGS=10V, ID=3.5A Static Drain-Source On-Resistance Units 1 Zero Gate Voltage Drain Current RDS(ON) Max 80 VDS=80V, VGS=0V IDSS ID(ON) Typ 4 5 6 nC 0.7 1.2 1.7 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=3.5A, dI/dt=300A/µs 14 20 26 Qrr Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=300A/µs 35 50 65 VGS=10V, VDS=40V, RL=8Ω, RGEN=3Ω 7.2 ns 2.2 ns 17 ns 2 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with DT. www.daysemi.jp TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 10V VDS=5V 7V 16 16 6V 12 ID(A) ID (A) 12 8 8 125°C 5.5V 4 4 25°C 5V 0 0 0 1 2 3 4 3 5 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 100 Normalized On-Resistance RDS(ON) (mΩ ) 6 7 2.2 90 80 70 VGS=10V 60 2 VGS=10V ID=3.5A 1.8 1.6 17 5 2 10 1.4 1.2 1 0.8 50 0 4 8 12 16 0 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 150 1.0E+02 ID=3.5A 1.0E+01 130 40 1.0E+00 125°C 125°C 110 IS (A) RDS(ON) (mΩ ) 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.0E-01 1.0E-02 90 25°C 1.0E-03 70 25°C 1.0E-04 1.0E-05 50 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) DT. www.daysemi.jp TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=40V ID=3.5A 800 Capacitance (pF) 6 4 Ciss 600 400 Coss 200 2 Crss 0 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 12 20 40 60 VDS (Volts) Figure 8: Capacitance Characteristics 80 100.0 100 ID(A), Peak Avalanche Current TA=25°C TA=100°C 10 TA=150°C 1 0.000001 0.00001 TA=125°C 10ms 100ms 0.0001 ID (Amps) 10.0 10µs RDS(ON) limited 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 100m DC 10s 0.0 0.1 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 TA=25°C 100 Power (W) VGS (Volts) 8 10 1 0.00001 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) 1000 DT. www.daysemi.jp TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 1 0.1 PD Single Pulse Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 100 1000 Package Information SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS DIM Min INCHES Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 www.daysemi.jp 1 Application Note RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.daysemi.jp 1 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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