DINTEK DTM4953A

DTM4953A
www.din-tek.jp
Dual P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
ID (A)
0.053 at VGS = - 10 V
- 4.9
0.090 at VGS = - 4.5 V
- 3.7
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
S1
S2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G1
G2
Top View
D1
D2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
- 3.7
- 3.9
- 2.9
- 30
- 1.7
- 0.9
2.0
1.1
1.3
0.7
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 4.9
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
52
62.5
90
110
32
40
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
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DTM4953A
www.din-tek.jp
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
-1
Typ.
Max.
Unit
± 100
nA
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Diode Forward Voltage
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 25
VDS = - 5 V, VGS = - 10 V
RDS(on)
Forward Transconductancea
a
V
µA
- 30
A
VGS = - 10 V, ID = - 4.9 A
0.045
0.053
VGS = - 4.5 V, ID = - 3.7 A
0.075
0.090
gfs
VDS = - 10 V, ID = - 4.9 A
9
VSD
IS = - 1.7 A, VGS = 0 V
- 0.8
- 1.2
15
25
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2
Turn-On Delay Time
td(on)
7
15
10
20
40
80
20
40
30
60
VDS = - 15 V, VGS = - 10 V, ID = - 4.9 A
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
4
IF = - 1.7 A, dI/dt = 100 A/µs
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
VGS = 10 V thru 7 V
TC = - 55 °C
6V
I D - Drain Current (A)
5V
I D - Drain Current (A)
25 °C
24
24
18
12
4V
125 °C
18
12
6
6
3V
0
0
0
2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
VDS - Drain-to-Source Voltage
VGS - Gate-to-Source Voltage
Output Characteristics
Transfer Characteristics
5
6
DTM4953A
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1500
1200
0.15
VGS = 4.5 V
0.10
Ciss
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.20
VGS = 10 V
900
600
0.05
Coss
300
Crss
0
0
6
0
12
18
24
30
0
6
ID - Drain Current (A)
12
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
1.6
VDS = 15 V
ID = 4.9 A
VGS = 10 V
ID = 4.9 A
8
6
4
2
(Normalized)
1.4
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
18
1.2
1.0
0.8
0
0
4
8
12
16
0.6
- 50
20
- 25
0
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.40
30
ID = 4.9 A
R DS(on) - On-Resistance (Ω)
0.35
I S - Source Current (A)
TJ = 150 °C
10
TJ = 25 °C
0.30
0.25
0.20
0.15
0.10
0.05
0
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10
3
DTM4953A
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8
50
40
ID = 250 µA
0.4
Power (W)
VGS(th) Variance (V)
0.6
0.2
30
20
0.0
10
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
150
0
10-3
10-2
10-1
1
Time (s)
10
600
100
Single Pulse Power
Threshold Voltage
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
4
1
10
Package Information
www.din-tek.jp
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
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Application Note
www.din-tek.jp
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Legal Disclaimer Notice
Disclaimer
www.din-tek.jp
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Material Category Policy
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
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