DYNEX DCR470G85_10

DCR470G85
Phase Control Thyristor
Preliminary Information
DS5894-2 January 2010 (LN26980)
FEATURES
KEY PARAMETERS

Double Side Cooling

High Surge Capability
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
APPLICATIONS
8500V
467A
5250A
1500V/µs
200A/us
* Higher dV/dt selections available

High Power Drives

High Voltage Power Supplies

Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
VDRM and VRRM
V
DCR470G85*
DCR470G80
DCR470G70
8500
8000
7000
Conditions
Tvj = -40°C to 125°C,
IDRM = IRRM = 100mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
0
0
*8200V @ -40 C, 8500V @ 0 C
ORDERING INFORMATION
Outline type code: G
(See Package Details for further information)
Fig. 1 Package outline
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR470G85
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
1/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
467
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
734
A
Continuous (direct) on-state current
-
725
A
IT
Half wave resistive load
SURGE RATINGS
Symbol
ITSM
2
It
Parameter
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 125°C
5.25
kA
VR = 0
0.138
MA s
Min.
Max.
Units
2
I t for fusing
2
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Test Conditions
Double side cooled
DC
-
0.0268
°C/W
Single side cooled
Anode DC
-
0.0527
°C/W
Cathode DC
-
0.0652
°C/W
Double side
-
0.0072
°C/W
-
.0144
°C/W
-
125
°C
Clamping force 11.5kN
(with mounting compound)
Blocking VDRM / VRRM
Single side
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
125
°C
Fm
Clamping force
10
13
kN
2/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
Parameter
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
100
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125°C, gate open
-
1500
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Repetitive 50Hz
-
100
A/µs
Gate source 30V, 10,
Non-repetitive
-
200
A/µs
tr < 0.5µs, Tj = 125°C
VT(TO)
rT
tgd
Threshold voltage – Low level
50A to 400A at Tcase = 125°C
-
1.162
V
Threshold voltage – High level
400A to 1600A at Tcase = 125°C
-
1.3063
V
On-state slope resistance – Low level
50A to 400A at Tcase = 125°C
-
3.153
m
On-state slope resistance – High level
400A to 1600A at Tcase = 125°C
-
2.763
m
VD = 67% VDRM, gate source 30V, 10
-
3
µs
-
1200
µs
2000
3000
µC
Delay time
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
Tj = 125°C, VR = 100V, dI/dt = 5A/µs,
dVDR/dt = 20V/µs linear
QS
Stored charge
IT = 500A, Tj = 125°C, dI/dt = 5A/µs,
IL
Latching current
Tj = 25°C, VD = 5V
-
3
A
IH
Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
300
mA
3/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25°C
1.5
V
VGD
Gate non-trigger voltage
At 50% VDRM, Tcase = 125°C
0.4
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25°C
250
mA
IGD
Gate non-trigger current
At 50% VDRM, Tcase = 125°C
10
mA
CURVES
Instantaneous on-state current I T - (A)
1600
25°C min
25°C max
125°C min
1200
125°C max
800
400
0
1.0
2.0
3.0
4.0
5.0
Instantaneous on-state voltage VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
Where
A = 1.545561
B = -0.202735
C = 0.001865
D = 0.066158
these values are valid for Tj = 125°C for IT 50A to 1600A
4/10
www.dynexsemi.com
DCR470G85
16
130
15
14
120
Maximum case temperature, Tcase ( o C )
Mean power dissipation - (kW)
SEMICONDUCTOR
13
12
11
10
9
8
7
6
180
120
90
60
30
5
4
3
2
1
110
100
90
80
70
60
50
40
30
20
10
0
0
500
1000
0
1500
0
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
100 200 300 400 500 600
Mean on-state current, IT(AV) - (A)
700
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
130
12
180
120
90
60
30
120
110
100
11
Mean power dissipation - (kW)
T
- ( ° C)
Maximum heatsink temperature,Heatsink
180
120
90
60
30
90
80
70
60
50
40
30
20
10
9
8
7
6
5
d.c.
180
120
90
60
30
4
3
2
10
1
0
0
100
200
300
400
500
600
700
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
0
0
500
1000
1500
2000
Mean on-state current, IT(AV) - (A)
Fig.6 On-state power dissipation – rectangular wave
5/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
130
120
d.c.
180
120
90
60
30
110
100
T
-(o C)
Maximum heatsink temperature heatsink
T -(° C)
Maximum permissible case temperature ,case
130
90
80
70
60
50
40
30
20
d.c.
180
120
90
60
30
120
110
100
90
80
70
60
50
40
30
20
10
10
0
0
0
200
400
600
800
1000
0
1200
200
400
Mean on-state current, IT(AV) - (A)
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
1000
Anode side cooled
Double Side Cooled
Anode Cooled
2
5.4226
3
16.9074
0.0066401
0.0457025
0.4962482
1.8248
2.3214
5.2661
10.2686
34.8031
0.0066948
0.045528
0.3484209
4.582
2.4895
5.9105
7.4256
49.3432
0.0070404
0.052895
0.3933903
4.2295
Ri (°C/kW)
Ti (s)
Cathode side cooled
1
2.2995
Ri (°C/kW)
Ti (s)
70
Themal impedance Z th(j-c) ( °C /kW )
800
Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
Double side cooled
60
600
Mean on-state current, IT(AV) - (A)
Ri (°C/kW)
Ti (s)
4
2.1488
Cathode Cooled
Zth =  [Ri x ( 1-exp. (t/ti))]
50
[1]
40
Rth(j-c) Conduction
Tables show the increments of thermal resistance R th(j-c) when the device
operates at conduction angles other than d.c.
30
20
Double side cooling
Zth (z)
10
0
0.001
0.01
0.1
1
Time ( s )
10
100
°
180
120
90
60
30
15
sine.
4.15
4.90
5.74
6.53
7.16
7.46
rect.
2.72
4.02
4.79
5.65
6.64
7.18
Anode Side Cooling
Zth (z)
°
180
120
90
60
30
15
sine.
4.15
4.89
5.73
6.52
7.15
7.44
rect.
2.72
4.02
4.78
5.65
6.62
7.16
Cathode Sided Cooling
Zth (z)
°
180
120
90
60
30
15
sine.
4.13
4.87
5.69
6.46
7.07
7.36
rect.
2.71
4.00
4.76
5.60
6.56
7.09
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
6/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
Fig.10 Multi-cycle surge current
Fig.11 Single-cycle surge current
5000
300
Q smax
4500
= 1932.517*(di/dt)0.275
IRRmax = 33.561*(di/dt)0.6733
250
Reverse recovery current, IRR - (A)
4000
3500
Stored charge Qs - (uC)
3000
2500
Q smin = 1117.47*(di/dt)0.3651
2000
1500
1000
Conditions:
Tj = 125oC
IT = 500A. tp = 1000us,
VR = -100V
500
0
0
5
10
15
20
25
200
150
IRRmin = 26.321*(di/dt) 0.6928
100
Conditions:
50
Tj = 125oC,
IT = 500A, tp = 1000us,
VR = -100V
0
0
5
10
15
20
25
Rate of decay of on -state current, di/dt - (A/us)
Rate of decay of on-state current, di/dt - (A/us)
Fig.12 Stored charge
Fig.13 Reverse recovery current
7/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
Pulse
Width us
100
200
500
1000
10000
Pulse Power PGM (Watts)
Frequency Hz
50
100
150
150
150
150
150
150
150
100
20
-
400
150
125
100
25
-
Fig14 Gate Characteristics
30
Lower Limit
Upper Limit
5W
10W
20W
50W
100W
150W
-40C
Gate trigger voltage, VGT - (V)
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
8/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
3rd ANGLE PROJECTION
DO NOT SCALE
IF IN DOUBT ASK
HOLE Ø3.60 X 2.00
DEEP (IN BOTH
ELECTRODES)
20° OFFSET (NOM.)
TO GATE TUBE
Device
DCR803SG18
DCR806SG28
DCR818SG48
DCR820SG65
DCR1080G22
DCR960G28
DCR780G42
DCR690G52
DCR590G65
DCR470G85
Maximum Minimum
Thickness Thickness
(mm)
(mm)
26.415
25.865
26.49
25.94
26.84
26.17
27.1
26.55
26.415
25.865
26.49
25.94
26.72
26.17
26.84
26.29
27.1
26.55
27.46
26.91
Ø57.0 MAX
Ø33.95 NOM
Ø1.5
CATHODE
GATE
ANODE
Ø33.95 NOM
FOR PACKAGE HEIGHT
SEE TABLE
Clamping force: 11.5 kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: G
Fig.16 Package outline
9/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LIMITED
Doddington Road, Lincoln, Lincolnshire, LN6 3LF
United Kingdom.
Phone: +44 (0) 1522 500500
Fax: +44 (0) 1522 500550
Web: http://www.dynexsemi.com
Phone: +(0) 1522 502753 / 502901
Fax: +(0) 1522 500020
e-mail: power_solutions@dynexsemi.com
 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor f orm part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
10/10
www.dynexsemi.com