DYNEX DCR590G60

DCR590G65
Phase Control Thyristor
DS5870-1.4 June 2008 (LN26249)
FEATURES
KEY PARAMETERS
Double Side Cooling
High Surge Capability
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
APPLICATIONS
6500V
595A
6600A
1500V/µs
200A/us
* Higher dV/dt selections available
High Power Drives
High Voltage Power Supplies
Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
VDRM and VRRM
V
DCR590G65*
DCR590G60
DCR590G55
6500
6000
5500
Conditions
Tvj = -40° C to 125° C,
IDRM = IRRM = 100mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Outline type code: G
(See Package Details for further information)
Lower voltage grades available.
0
0
*6200V @ -40 C, 6500V @ 0 C
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR590G65
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR590G65
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60° C unless stated otherwise
Parameter
Symbol
Test Conditions
Max.
Units
595
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
935
A
Continuous (direct) on-state current
-
912
A
IT
Half wave resistive load
SURGE RATINGS
Parameter
Symbol
ITSM
2
It
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 125° C
6.6
kA
VR = 0
0.22
MA s
Min.
Max.
Units
2
I t for fusing
2
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Tvj
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Virtual junction temperature
Test Conditions
Double side cooled
DC
-
0.0268
° C/W
Single side cooled
Anode DC
-
0.0527
° C/W
Cathode DC
-
0.0652
° C/W
Clamping force 11.5kN
Double side
-
0.0072
° C/W
(with mounting compound)
Single side
-
0.0144
° C/W
On-state (conducting)
-
135
°C
Reverse (blocking)
-
125
°C
Tstg
Storage temperature range
-55
125
°C
Fm
Clamping force
10
13
kN
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DCR590G65
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
Parameter
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125° C
-
100
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125° C, gate open
-
1500
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Repetitive 50Hz
-
100
A/µs
Gate source 30V, 10,
Non-repetitive
-
200
A/µs
tr < 0.5µs, Tj = 125° C
VT(TO)
rT
tgd
Threshold voltage – Low level
50A to 400A at Tcase = 125° C
-
0.912
V
Threshold voltage – High level
400A to 1600A at Tcase = 125° C
-
1.108
V
On-state slope resistance – Low level
50A to 400A at Tcase = 125° C
-
2.157
m
On-state slope resistance – High level
400A to 1600A at Tcase = 125° C
-
1.647
m
VD = 67% VDRM, gate source 30V, 10
-
3
µs
550
1100
µs
Delay time
tr = 0.5µs, Tj = 25° C
tq
Turn-off time
IT = 500A , Tj = 125° C, VR = 100V,
dI/dt = 5A/µs,
dVDR/dt = 20V/µs linear
QS
Stored charge
IT = 500A, Tj = 125° C, dI/dt = 5A/µs,
1800
2600
µC
IRR
Reverse recovery current
IT = 500A, Tj = 125° C, dI/dt = 5A/µs,
77
90
A
IL
Latching current
Tj = 25° C, VD = 5V
-
3
A
IH
Holding current
Tj = 25° C, RG-K = , ITM = 500A, IT = 5A
-
300
mA
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DCR590G65
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25° C
1.5
V
VGD
Gate non-trigger voltage
At 50% VDRM, Tcase = 125° C
0.4
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25° C
250
mA
IGD
Gate non-trigger current
At 50% VDRM, Tcase = 125° C
15
mA
CURVES
Instantaneous on-state current, IT - (A)
1600
1200
800
25°C min
25°C max
125°C min
125°C max
400
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
Where
A = 0.542452
B = 0.065613
C = 0.001318
D = 0.015356
these values are valid for Tj = 125° C for IT 50A to 1600A
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DCR590G65
SEMICONDUCTOR
16
130
15
120
Maximum case temperature, T case ( oC )
14
Mean power dissipation - (kW)
13
12
11
10
9
8
7
180
120
90
60
30
6
5
4
3
2
1
180
120
90
60
30
110
100
90
80
70
60
50
40
30
20
10
0
0
0
500
1000
1500
2000
0
100 200 300 400 500 600 700 800 900
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
180
120
90
60
30
120
110
100
12
11
Mean power dissipation - (kW)
Maximum heatsink temperature, T Heatsink - ( oC )
130
90
80
70
60
50
40
30
20
10
10
9
8
7
6
5
d.c.
180
120
90
60
30
4
3
2
1
0
0
100
200
300
400
500
600
700
800
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
0
0
500
1000
1500
2000
2500
Mean on-state current, IT(AV) - (A)
Fig.6 On-state power dissipation – rectangular wave
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DCR590G65
SEMICONDUCTOR
130
d.c.
180
120
90
60
30
120
110
100
90
d.c.
180
120
90
60
30
120
Maximum heatsik temperature Theatsink - (oC)
Maximum permissible case temperature , T case - (°C)
130
80
70
60
50
40
30
20
10
110
100
90
80
70
60
50
40
30
20
10
0
0
0
200
400
600
800
1000 1200 1400
0
200
400
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
1000
1200
Anode side cooled
Double Side Cooled
Anode Cooled
2
5.4226
3
16.9074
0.0066401
0.0457025
0.4962482
1.8248
2.3214
5.2661
10.2686
34.8031
0.0066948
0.045528
0.3484209
4.582
2.4895
5.9105
7.4256
49.3432
0.0070404
0.052895
0.3933903
4.2295
Ri (°C/kW)
Ti (s)
Cathode side cooled
1
2.2995
Ri (°C/kW)
Ti (s)
70
Themal impedance Z th(j-c) ( °C/kW )
800
Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
Double side cooled
60
600
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Ri (°C/kW)
Ti (s)
4
2.1488
Cathode Cooled
Zth = [Ri x ( 1-exp. (t/ti))]
50
[1]
40
Rth(j-c) Conduction
30
Tables show the increments of thermal resistance R th(j-c) when the device
operates at conduction angles other than d.c.
20
10
0
0.001
0.01
0.1
1
Time ( s )
10
100
°
180
120
90
60
30
15
Double side cooling
Zth (z)
sine.
4.15
4.90
5.74
6.53
7.16
7.46
rect.
2.72
4.02
4.79
5.65
6.64
7.18
°
180
120
90
60
30
15
Anode Side Cooling
Zth (z)
sine.
4.15
4.89
5.73
6.52
7.15
7.44
rect.
2.72
4.02
4.78
5.65
6.62
7.16
Cathode Sided Cooling
Zth (z)
°
180
120
90
60
30
15
sine.
4.13
4.87
5.69
6.46
7.07
7.36
rect.
2.71
4.00
4.76
5.60
6.56
7.09
Fig.9 Maximum (limit) transient thermal impedance – junction to case (° C/kW)
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DCR590G65
SEMICONDUCTOR
20
18
4
3
2
1
16
ITSM
14
0.3
2
12
10
I2t
8
0.2
6
4
0.1
2
0
0
1
10
1
100
Pulse width, tP - (ms)
Fig.10 Multi-cycle surge current
4500
0
100
10
Number of cycles
Fig.11 Single-cycle surge current
250
QSmax = 1596.04*(di/dt)0.3032
IRRmax = 30.906*(di/dt)0.6633
Reverse recovery current, IRR - (A)
4000
3500
Stored charge, QS - (uC)
0.4
2
5
Surge current, ITSM - (kA)
Conditions:
Tcase = 125°C
VR =0
Pulse width = 10ms
6
Surge current, ITSM- (kA)
0.5
Conditions:
Tcase= 125°C
VR = 0
half-sine wave
I t (MA s)
7
3000
2500
2000
QSmin = 954.26*(di/dt)0.3943
1500
1000
200
150
100
IRRmin = 25.12*(di/dt)0.6961
50
500
0
0
0
5
10
15
20
25
Rate of decay of on-state currrent, dI/dt - (A/us)
Fig.12 Stored charge vs di/dt
0
5
10
15
20
25
Rate of decay of on-state current, di/dt - (A/us)
Fig.13 Reverse recovery current vs di/dt
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DCR590G65
SEMICONDUCTOR
10
9
Pulse
Width us
100
200
500
1000
10000
Gate trigger voltage, VGT - (V)
8
7
Pulse Power PGM (Watts)
Frequency Hz
50
100
150
150
150
150
150
150
150
100
20
-
400
150
125
100
25
-
Upper Limit
6
5
Preferred gate drive area
4
3
2
o
1
Tj = -40oC
Tj = 25oC
Lower Limit
Tj = 125 C
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Gate trigger current IGT, - (A)
Fig14 Gate Characteristics
30
Lower Limit
Upper Limit
5W
10W
20W
50W
100W
150W
-40C
Gate trigger voltage, VGT - (V)
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
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DCR590G65
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
3rd ANGLE PROJECTION
DO NOT SCALE
IF IN DOUBT ASK
HOLE Ø3.60 X 2.00
DEEP (IN BOTH
ELECTRODES)
20° OFFSET (NOM.)
TO GATE TUBE
Device
DCR803SG18
DCR806SG28
DCR818SG48
DCR820SG65
DCR1080G22
DCR960G28
DCR780G42
DCR690G52
DCR590G65
DCR470G85
Maximum Minimum
Thickness Thickness
(mm)
(mm)
26.415
25.865
26.49
25.94
26.84
26.17
27.1
26.55
26.415
25.865
26.49
25.94
26.72
26.17
26.84
26.29
27.1
26.55
27.46
26.91
Ø57.0 MAX
Ø33.95 NOM
Ø1.5
CATHODE
GATE
ANODE
Ø33.95 NOM
FOR PACKAGE HEIGHT
SEE TABLE
Clamping force: 11.5 kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: G
Fig.16 Package outline
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DCR590G65
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
CUSTOMER SERVICE
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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