DGT304RE DGT304RE Reverse Blocking Gate Turn-off Thyristor Replaces February 2002 version, issue DS5518-2.1 DS5518-3.0 July 2004 FEATURES KEY PARAMETERS ■ Reverse Blocking Capability ITCM 700A ■ Double Side Cooling High Reliability In Service VDRM/VRRM 1300V ■ High Voltage Capability IT(AV) 250A ■ ■ Fault Protection Without Fuses dVD/dt 500V/µs ■ High Surge Current Capability diT/dt 500A/µs ■ Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements APPLICATIONS ■ Variable speed A.C. motor drive inverters (VSD-AC) ■ Uninterruptable Power Supplies ■ High Voltage Converters ■ Choppers ■ Welding ■ Induction Heating ■ DC/DC Converters Outline type code: E (See Package Details for further information) Fig. 1 Package outline VOLTAGE RATINGS Type Number Repetitive Peak Off-state Voltage VDRM V Repetitive Peak Reverse Voltage VRRM V Conditions 1300 1300 Tvj = 125oC, IDM = 50mA, DGT304RE13 IRRM = 50mA, VRG = 2V CURRENT RATINGS Symbol Parameter Conditions Max. Units 700 A ITCM Repetitive peak controllable on-state current VD = 60%VDRM, Tj = 125oC, diGQ/dt =15A/µs, Cs = 2.0µF IT(AV) Mean on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 250 A IT(RMS) RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 390 A 1/14 www.dynexsemi.com DGT304RE SURGE RATINGS Symbol ITSM I2t diT/dt dVD/dt Conditions Parameter Max. Units Surge (non-repetitive) on-state current 10ms half sine. Tj = 125oC 4.0 kA I2t for fusing 10ms half sine. Tj =125oC 80000 A2s Critical rate of rise of on-state current VD = 60% VDRM, IT = 700A, Tj = 125oC, IFG > 20A, Rise time < 1.0µs 500 A/µs Rate of rise of off-state voltage To 80% VDRM; RGK ≤ 1.5Ω, Tj = 125oC 500 V/µs GATE RATINGS Symbol Parameter Conditions This value maybe exceeded during turn-off Min. Max. Units - 16 V VRGM Peak reverse gate voltage IFGM Peak forward gate current - 50 A Average forward gate power - 10 W Peak reverse gate power - 6 kW PFG(AV) PRGM diGQ/dt Rate of rise of reverse gate current 10 50 A/µs tON(min) Minimum permissable on time 20 - µs tOFF(min) Minimum permissable off time 40 - µs Min. Max. Units Double side cooled - 0.075 o Anode side cooled - 0.12 o Cathode side cooled - 0.20 o - 0.018 o - 125 o Operating junction/storage temperature range -40 125 o Clamping force 5.0 6.0 kN THERMAL RATINGS Symbol Rth(j-hs) Parameter DC thermal resistance - junction to heatsink surface Rth(c-hs) Contact thermal resistance Tvj Virtual junction temperature TOP/Tstg - Conditions Clamping force 5.5kN With mounting compound per contact C/W C/W C/W C/W C C 2/14 www.dynexsemi.com DGT304RE CHARACTERISTICS Tj = 125oC unless stated otherwise Symbol Conditions Parameter Min. Max. Units VTM On-state voltage At 600A peak, IG(ON) = 2A d.c. - 2.2 V IDM Peak off-state current At = VDRM, VRG = 2V - 25 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 0.9 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 1.0 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy VD = 900V, IT = 600A, dIT/dt = 300A/µs - 130 mJ td Delay time IFG = 20A, rise time < 1.0µs - 1.5 µs tr Rise time RL = (Residual inductance 3µH) - 3.0 µs - 350 mJ - 10 µs - 11 µs - 0.9 µs - 11.9 µs EOFF ttail Turn-off energy Tail time IT =600A, VDM = 750V tgs Storage time Snubber Cap Cs = 1.5µF, tgf Fall time tgq Gate controlled turn-off time diGQ/dt = 15A/µs RL = (Residual inductance 3µH) QGQ Turn-off gate charge - 700 µC QGQT Total turn-off gate charge - 1400 µC 3/14 www.dynexsemi.com DGT304RE CURVES Fig.2 Gate characteristics Fig.3 Maximum (limit) on-state characteristics Fig.4 Dependence of ITCM on CS Fig.5 Maximum (limit) transient thermal resistance 4/14 www.dynexsemi.com DGT304RE Fig.6 Surge (non-repetitive) on-state current vs time Fig.7 Steady state rectangulerwave conduction loss - double side cooled 5/14 www.dynexsemi.com DGT304RE Fig.8 Steady state sinusoidal wave conduction loss - double side cooled Fig.9 Turn-on energy vs on-state current Fig.10 Turn-on energy vs peak forward gate current 6/14 www.dynexsemi.com DGT304RE Fig.11 Turn-on energy vs on-state current Fig.13 Turn-on energy vs rate of rise of on-state current Fig.12 Turn-on energy vs peak forward gate current Fig.14 Delay time and rise time vs on-state current 7/14 www.dynexsemi.com DGT304RE Fig.15 Delay time and rise time vs peak forward gate current Fig.16 Turn-off energy vs on-state current Fig.17 Turn-off energy vs rate of rise of reverse gate current Fig.18 Turn-off energy vs on-state current 8/14 www.dynexsemi.com DGT304RE Fig.19 Turn-off energy vs rate of rise of reverse gate current Fig.20 Turn-off energy vs on-state current with CS as parameter Fig.21 Storage time vs on-state current Fig.22 Storage time vs rate of rise of reverse gate current 9/14 www.dynexsemi.com DGT304RE Fig.23 Fall time vs on-state current Fig.24 Fall time vs rate of rise of reverse gate current Fig.25 Peak reverse gate current vs on-state current Fig.26 Peak reverse gate current vs rate of rise of reverse gate current 10/14 www.dynexsemi.com DGT304RE Fig.27 Turn-off gate charge vs on-state current Fig.28 Turn-off gate charge vs rate of rise of reverse gate current Fig.29 Dependence of critical dVD/dt on gate-cathode resistance and gate-cathode reverse voltage 11/14 www.dynexsemi.com Anode voltage and current DGT304RE 0.9VD 0.9IT dVD/dt VD IT 0.1VD td ITAIL VDP tgs tr Recommended gate conditions:ITCM = 700A IFG = 20A dIFG/dt = 20A/µs IG(ON) = 2A d.c. tw1(min) = 4.5µs VD VDM IGQM = 120A dIGQ/dt = 15A/µs QGQ = 700µc VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. tgf tgt Gate voltage and current dIFG/dt 0.1IFG tgq IFG VFG IG(ON) 0.1IGQ tw1 VRG QGQ 0.5IGQM IGQM V(RG)BR Fig.30 General switching waveforms 12/14 www.dynexsemi.com DGT304RE PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 30˚ 1 5˚ 2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep (One in each electrode) Cathode tab Cathode Ø42max Ø25nom. Gate 15 14 Ø25nom. Anode Nominal weight: 82g Clamping force: 6kN ±10% Package outline type code: E 13/14 www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com