DYNEX DGT304RE_04

DGT304RE
DGT304RE
Reverse Blocking Gate Turn-off Thyristor
Replaces February 2002 version, issue DS5518-2.1
DS5518-3.0 July 2004
FEATURES
KEY PARAMETERS
■
Reverse Blocking Capability
ITCM
700A
■
Double Side Cooling
High Reliability In Service
VDRM/VRRM
1300V
■
High Voltage Capability
IT(AV)
250A
■
■
Fault Protection Without Fuses
dVD/dt
500V/µs
■
High Surge Current Capability
diT/dt
500A/µs
■
Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
APPLICATIONS
■
Variable speed A.C. motor drive inverters (VSD-AC)
■
Uninterruptable Power Supplies
■
High Voltage Converters
■
Choppers
■
Welding
■
Induction Heating
■
DC/DC Converters
Outline type code: E
(See Package Details for further information)
Fig. 1 Package outline
VOLTAGE RATINGS
Type Number
Repetitive Peak Off-state
Voltage
VDRM
V
Repetitive Peak Reverse Voltage
VRRM
V
Conditions
1300
1300
Tvj = 125oC, IDM = 50mA,
DGT304RE13
IRRM = 50mA, VRG = 2V
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
700
A
ITCM
Repetitive peak controllable on-state current VD = 60%VDRM, Tj = 125oC, diGQ/dt =15A/µs, Cs = 2.0µF
IT(AV)
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
250
A
IT(RMS)
RMS on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
390
A
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DGT304RE
SURGE RATINGS
Symbol
ITSM
I2t
diT/dt
dVD/dt
Conditions
Parameter
Max.
Units
Surge (non-repetitive) on-state current
10ms half sine. Tj = 125oC
4.0
kA
I2t for fusing
10ms half sine. Tj =125oC
80000
A2s
Critical rate of rise of on-state current
VD = 60% VDRM, IT = 700A, Tj = 125oC, IFG > 20A,
Rise time < 1.0µs
500
A/µs
Rate of rise of off-state voltage
To 80% VDRM; RGK ≤ 1.5Ω, Tj = 125oC
500
V/µs
GATE RATINGS
Symbol
Parameter
Conditions
This value maybe exceeded during turn-off
Min.
Max.
Units
-
16
V
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
-
50
A
Average forward gate power
-
10
W
Peak reverse gate power
-
6
kW
PFG(AV)
PRGM
diGQ/dt
Rate of rise of reverse gate current
10
50
A/µs
tON(min)
Minimum permissable on time
20
-
µs
tOFF(min)
Minimum permissable off time
40
-
µs
Min.
Max.
Units
Double side cooled
-
0.075
o
Anode side cooled
-
0.12
o
Cathode side cooled
-
0.20
o
-
0.018
o
-
125
o
Operating junction/storage temperature range
-40
125
o
Clamping force
5.0
6.0
kN
THERMAL RATINGS
Symbol
Rth(j-hs)
Parameter
DC thermal resistance - junction to heatsink
surface
Rth(c-hs)
Contact thermal resistance
Tvj
Virtual junction temperature
TOP/Tstg
-
Conditions
Clamping force 5.5kN
With mounting compound
per contact
C/W
C/W
C/W
C/W
C
C
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DGT304RE
CHARACTERISTICS
Tj = 125oC unless stated otherwise
Symbol
Conditions
Parameter
Min.
Max.
Units
VTM
On-state voltage
At 600A peak, IG(ON) = 2A d.c.
-
2.2
V
IDM
Peak off-state current
At = VDRM, VRG = 2V
-
25
mA
IRRM
Peak reverse current
At VRRM
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25oC
-
0.9
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25oC
-
1.0
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
VD = 900V, IT = 600A, dIT/dt = 300A/µs
-
130
mJ
td
Delay time
IFG = 20A, rise time < 1.0µs
-
1.5
µs
tr
Rise time
RL = (Residual inductance 3µH)
-
3.0
µs
-
350
mJ
-
10
µs
-
11
µs
-
0.9
µs
-
11.9
µs
EOFF
ttail
Turn-off energy
Tail time
IT =600A, VDM = 750V
tgs
Storage time
Snubber Cap Cs = 1.5µF,
tgf
Fall time
tgq
Gate controlled turn-off time
diGQ/dt = 15A/µs
RL = (Residual inductance 3µH)
QGQ
Turn-off gate charge
-
700
µC
QGQT
Total turn-off gate charge
-
1400
µC
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DGT304RE
CURVES
Fig.2 Gate characteristics
Fig.3 Maximum (limit) on-state characteristics
Fig.4 Dependence of ITCM on CS
Fig.5 Maximum (limit) transient thermal resistance
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DGT304RE
Fig.6 Surge (non-repetitive) on-state current vs time
Fig.7 Steady state rectangulerwave conduction loss - double side cooled
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DGT304RE
Fig.8 Steady state sinusoidal wave conduction loss - double side cooled
Fig.9 Turn-on energy vs on-state current
Fig.10 Turn-on energy vs peak forward gate current
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DGT304RE
Fig.11 Turn-on energy vs on-state current
Fig.13 Turn-on energy vs rate of rise of on-state current
Fig.12 Turn-on energy vs peak forward gate current
Fig.14 Delay time and rise time vs on-state current
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DGT304RE
Fig.15 Delay time and rise time vs peak forward gate current
Fig.16 Turn-off energy vs on-state current
Fig.17 Turn-off energy vs rate of rise of reverse gate current
Fig.18 Turn-off energy vs on-state current
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DGT304RE
Fig.19 Turn-off energy vs rate of rise of reverse gate current
Fig.20 Turn-off energy vs on-state current with CS as parameter
Fig.21 Storage time vs on-state current
Fig.22 Storage time vs rate of rise of reverse gate current
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DGT304RE
Fig.23 Fall time vs on-state current
Fig.24 Fall time vs rate of rise of reverse gate current
Fig.25 Peak reverse gate current vs on-state current
Fig.26 Peak reverse gate current vs rate of rise of reverse
gate current
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DGT304RE
Fig.27 Turn-off gate charge vs on-state current
Fig.28 Turn-off gate charge vs rate of rise of reverse
gate current
Fig.29 Dependence of critical dVD/dt on gate-cathode
resistance and gate-cathode reverse voltage
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Anode voltage and current
DGT304RE
0.9VD
0.9IT
dVD/dt
VD
IT
0.1VD
td
ITAIL
VDP
tgs
tr
Recommended gate conditions:ITCM = 700A
IFG = 20A
dIFG/dt = 20A/µs
IG(ON) = 2A d.c.
tw1(min) = 4.5µs
VD VDM
IGQM = 120A
dIGQ/dt = 15A/µs
QGQ = 700µc
VRG(min) = 2V
VRG(max) = 16V
These are recommended Dynex Semiconductor
conditions. Other conditions are permitted
according to users gate drive specifications.
tgf
tgt
Gate voltage and current
dIFG/dt
0.1IFG
tgq
IFG
VFG
IG(ON)
0.1IGQ
tw1
VRG
QGQ
0.5IGQM
IGQM
V(RG)BR
Fig.30 General switching waveforms
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DGT304RE
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
30˚
1 5˚
2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep
(One in each electrode)
Cathode tab
Cathode
Ø42max
Ø25nom.
Gate
15
14
Ø25nom.
Anode
Nominal weight: 82g
Clamping force: 6kN ±10%
Package outline type code: E
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always
be followed.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
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