DYNEX DSF11060SG_04

DSF11060SG
DSF11060SG
Fast Recovery Diode
Replaces January 2000 version, DS4217-3.0
DS4548-4.0 June 2004
APPLICATIONS
KEY PARAMETERS
VRRM
6000V
IF(AV)
400A
IFSM
4200A
Qr
700µC
trr
6.0µs
■ Snubber Diode For GTO Circuits
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ Low Recovery Charge
VOLTAGE RATINGS
Type Number
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
Repetitive Peak
Reverse Voltage
VRRM
V
6000
5800
5600
5500
Conditions
VRSM = VRRM + 100V
Lower voltage grades available.
Outline type code: M779b.
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DSF11060SG58
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DSF11060SG
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
400
A
IF(RMS)
RMS value
Tcase = 65oC
631
A
Continuous (direct) forward current
Tcase = 65oC
585
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
265
A
IF(RMS)
RMS value
Tcase = 65oC
420
A
Continuous (direct) forward current
Tcase = 65oC
365
A
IF
SURGE RATINGS
Symbol
IFSM
I2t
IFSM
I2t
Parameter
Conditions
Max.
Units
4.2
kA
88 x 103
A2s
3.4
kA
57.8 x 103
A2s
Surge (non-repetitive) forward current
10ms half sine; with 0% VRRM, Tj = 150oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% VRRM, Tj = 150oC
I2t for fusing
THERMAL AND MECHANICAL DATA
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Min.
Max.
Units
dc
-
0.032
o
Anode dc
-
0.064
o
Cathode dc
-
0.064
o
C/W
Double side
-
0.008
o
C/W
Single side
-
0.016
o
C/W
-
135
o
C/W
C/W
Single side cooled
Rth(c-h)
Thermal resistance - case to heatsink
Clamping force 12kN
with mounting compound
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
125
o
Clamping force
10.8
13.2
kN
-
Forward (conducting)
C
C
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DSF11060SG
CHARACTERISTICS
Symbol
Conditions
Parameter
Typ.
Max.
Units
VFM
Forward voltage
At 600A peak, Tcase = 25oC
-
3.8
V
IRRM
Peak reverse current
At VRRM, Tcase = 125oC
-
70
mA
6.0
-
µs
-
1000
µC
350
-
A
1.7
-
-
trr
QRA1
Reverse recovery time
Recovered charge (50% chord)
IF = 1000A, diRR/dt = 100A/µs
IRM
Reverse recovery current
Tcase = 125oC, VR = 100V
K
Soft factor
VTO
Threshold voltage
At Tvj = 125oC
-
1.5
V
rT
Slope resistance
At Tvj = 125oC
-
2.9
mΩ
Forward recovery voltage
di/dt = 1000A/µs, Tj = 100oC
-
400
V
VFRM
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
dIR/dt
t1
t2
k = t1/t2
τ
0.5x IRR
IRR
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DSF11060SG
CURVES
10000
IF
Conditions:
Tj = 125˚C,
VR = 100V
50µs
QS =
0
1000
Conditions:
Tj = 125˚C,
VR = 100V
A
B
C
Reverse recovered charge Qrr - (µC)
QS
Reverse recovery current IRR - (A)
tp = 1ms
dIR/dt
IRR
A
B
C
1000
D
E
100
D
E
A: IF = 2000A
B: IF = 1000A
C: IF = 500A
D: IF = 200A
E: IF = 100A
100
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.2 Recovered charge
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.3 Typical reverse recovery current vs rate of rise of
forward current
d.c. Double side cooled
Thermal impedance, junction to case, Zth(j-c) - (˚C/W)
0.100
10
1
A: IF = 2000A
B: IF = 1000A
C: IF = 500A
D: IF = 200A
E: IF = 100A
0.010
0.001
0.01
0.1
1
Time - (s)
10
100
Fig.4 Maximum (limit) transient thermal impedance junction to case - (˚C/W)
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DSF11060SG
PACKAGE DETAILS
(Alternative outline G includes gate connections, all other details are the same as M779b).
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6x2.0 deep (in both electrodes)
Cathode
Ø58.5 max
27.0
25.4
Ø34 nom
Ø34 nom
Anode
Nominal weight: 310g
Clamping force: 12kN ±10%
Package outline type code: M779b
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always
be followed.
http://www.dynexsemi.com
e-mail: power_solu[email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
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