ELMOS E52201

PRELIMINARY INFORMATION - MAY 29, 2012
Features
General Description
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The E522.01/02/03/04/05/06/07/08/09 product family
provides ultra low quiescent current step down DC/DC
converters with integrated power MOSFET.
The PFM (Pulse Frequency Modulation) regulator allows
outstanding fast line- and load response time, stability
and high efficiency over the full load current range. The
integrated idle detection assures an ultra low idle current and high efficiency with low load currents down
to <100µA for the completely powered application. A
power-good signal is provided by a high-voltage opendrain low-side switch.
The E522.0x buck converter accommodates to common
single supply micro controller applications. Low external component count and small QFN20L4 / TSSOP16
package allow compact PCB designs.
Wide input voltage range 4.5V to 40V
PFM regulator up to 1.33MHz
Up to >92% efficiency
Very low 8µA sleep mode current
Ultra low 12µA standby current
100% duty cycle capability
Small QFN20L4 lead-less package
TSSOP16 package
AEC-Q100 qualification
Junction temperature range -40°C to +150°C
Applications
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Micro Controller Systems
Automotive Telematics, Dashboards
Partial Networking
Peripheral Control Systems
Ordering Information
VOUT
E522.01
5V
500mA -40°C to +125°C
E522.06
E522.02
3.3V
500mA -40°C to +125°C
E522.07
E522.03
5V
350mA -40°C to +125°C
E522.04
3.3V
350mA -40°C to +125°C
E522.05
IOUT
Ambient Temp.
Range
Product ID
1.5 to 40V 500mA -40°C to +125°C
IN
Product ID
IOUT
Ambient Temp.
Range
1.5 to 40V 350mA -40°C to +125°C
5V
1A
-40°C to +125°C
E522.08
3.3V
1A
-40°C to +125°C
E522.09
1.5 to 40V
1A
-40°C to +125°C
Ordering information continued at the end of this document.
VIN
CIN
VOUT
Feedback for E522.05/06/09
CSENSE
PGOOD
ON
ON
PG
RSENSE2
SENSE
E522.0x
RSENSE1
LLXT
LXT
D
OCP
OUT
COUT
R
AGND
PGND
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 1/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT PFM STEP DOWN CONVERTERS
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
PRELIMINARY INFORMATION - MAY 29, 2012
1 Functional Diagram
IDLE
OCP
Resistor
Driver
OCP
VIN
Internal
Driver
Transistor
LXT
OC OFF
DRIVER
VIN
OVT
Internal
Supply
ON
PFM
Controller
ENABLE
IDLE
Detector
ACTIVE
IDLE
PGOOD
SENSE
Power Good
Comparator
VOUT
Comparator
E522.0X
SENSE
AGND
PGND
Figure 1: Block diagram
2 Pinout
3
NC
4
PGOOD
5
NC
NC
E522.0x
AGND
6
7
8
9
LXT
14
PGND
13
NC
12
SENSE
11
SENSE
10
QFN20L4
NC
1
16
NC
VIN
2
15
LXT
14
NC
13
PGND
12
SENSE
NC
3
ON
4
NC
5
PGOOD
6
11
NC
NC
7
10
NC
AGND
8
9
E522.0x
ON
15
OCP
2
16
NC
NC
17
21
NC
1
NC
VIN
19 18
NC
20
NC
NC
2.1 Pin Configuration QFN20L4 / TSSOP16
OCP
TSSOP16
Figure 2: Package pinout, transparent top view, not to scale.
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 2/24
QM-No.: 25DS0064E.01
2.2 Pin Description
Table 1: Pin Description
Pin
QFN20L4 TSSOP16
Name
Type 1)
1
2
VIN
HV S
2
1
NC
-
3
4
ON
HV AI
4
3
NC
-
Description
Remark
bypass to GND
with a low ESR capacitance >20µF
High-Voltage Supply input
Not connected
Open or GND
High-Voltage input to enable converter
Not connected
Open or GND
High-Voltage capable low-side open-drain
output for
power good flag
5
6
PGOOD
HV AO
6
8
AGND
S
Signal ground connection
7
5
NC
-
Not connected
Open or GND
8
7
NC
-
Not connected
Open or GND
9
10
NC
-
Not connected
Open or GND
10
9
OCP
AI
Over-current protection resistor input, connect to ground via resistor
11
-
SENSE
AI
Feedback input for converter regulation,
connect to output voltage
Redundant, connect both SENSE
pins
12
12
SENSE
AI
Feedback input for converter regulation,
connect to output voltage
Redundant, connect both SENSE
pins
13
11
NC
-
Not connected
14
13
PGND
S
Power ground connection
15
15
LXT
HV AO
16
14
NC
-
Not connected
Open or GND
17
16
NC
-
Not connected
Open or GND
18
-
NC
-
Not connected
Open or GND
19
-
NC
-
Not connected
Open or GND
20
-
NC
-
Not connected
21
-
EP
-
Exposed die pad
Open or GND
Integrated high-side switch output, connect freewheeling diode and inductor to
this pin
Open or GND
Connect to GND
1) D = Digital, A = Analog, S = Supply, HV = High voltage (see max. ratings), I = Input, O = Output
Note: Pins with identical names have to be connected.
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 3/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
PRELIMINARY INFORMATION - MAY 29, 2012
PRELIMINARY INFORMATION - MAY 29, 2012
3 Absolute Maximum Ratings
Stresses beyond these absolute maximum ratings listed below may cause permanent damage to the device. These are stress
ratings only; operation of the device at these or any other conditions beyond those listed in the operational sections of this
document is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
All voltages referred to VGND. Currents flowing into terminals are positive, those drawn out of a terminal are negative.
Description
Condition
Symbol
Min
Max
Unit
Supply voltage at pin VIN
V VIN
-0.3
40
V
Voltage at pin ON
VON
-0.3
40
V
Voltage at pin PGOOD
VPGOOD
-0.3
40
V
Current at pin PGOOD
IPGOOD
0
5
mA
Voltage at pin SENSE
VSENSE
-0.3
6
V
Voltage at pin OCP
VOCP
-0.3
0.8
V
Voltage at pin LXT
VLXT
-10
VIN +0.3
V
Power dissipation (E522.01-06)
PTOT
500
mW
Power dissipation (E522.07-09)
PTOT
1
W
Storage temperature
TSTG
+150
°C
-50
4 ESD Protection
Description
Condition
Symbol
Min
Max
Unit
ESD HBM protection at pin VIN
1)
VESD(HBM)
3
kV
ESD HBM protection at all other pins
1)
VESD(HBM)
2
kV
ESD CDM protection at all pins
2)
VESD(CDM)
500
V
ESD CDM protection at corner pins
2)
VESD(CDM)C
750
V
1) According to AEC-Q100-002 (HBM) chip level test
2) According to AEC-Q100-011 (CDM) chip level test
5 Recommended Operating Conditions
Description
Condition
Symbol
Min
Max
Unit
Junction temperature
TJ
-40
+150
°C
Ambient temperature
Tamb
-40
+125
°C
Supply voltage at pin VIN
V VIN
4.5 1)
40
V
1) For V VIN < VOUT , E522.0x enters 100% duty cycle mode
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 4/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
6 Electrical Characteristics
(V VIN = 4.5V to 40V, Tamb = -40°C to +125°C, unless otherwise noted. Typical values are at V VIN = 14V and Tamb = +25°C.
Positive currents flow into the device pins.)
Description
Condition
Symbol
Min
Typ
Max
Unit
Supply
Sleep mode
quiescent current
VON = 0;
non-switching
IVIN,q,SLP
8
µA
Active mode
quiescent current
VON = V VIN > 8V;
IOUT < 100µA
IVIN,q
12
µA
Active mode
quiescent current
VON = V VIN
L XT driver OFF
IVIN,q
150
µA
Input resistance at pin ON
VON = V VIN = 14V
ION
7
MΩ
Threshold voltage
at pin ON
V VIN > 4.5V
VON,th
VIN Undervoltage Lockout
V VIN rising
1.40
1.48
1.56
V
V VIN,UV
3.5
4.2
V
VOCP
500
Output Current Limit Programming
Output voltage at OCP
24kΩ ≤ ROCP ≤ 60kΩ
OCP Selection Resistor
ROCP
Load capacitance at OCP
COCP
24
mV
60
kΩ
100
pF
5.0
5.2
V
0.7
1.5
Ω
E522.01 Output
Output regulation threshold 1)
IOUT = 500mA
V VIN = 14V
On Resistance at LXT
V VIN = 14V
4.8
RDS(ON)
2)
IOCP,24kΩ
740
830
920
mA
ROCP = 60kΩ 2)
IOCP,60kΩ
300
350
400
mA
Output regulation threshold 1)
IOUT = 500mA
V VIN = 14V
VOUT
3.2
3.33
3.46
V
On Resistance at LXT
V VIN = 14V
0.7
1.5
Ω
Over-current detection
ROCP = 24kΩ
VOUT
E522.02 Output
Overcurrent detection
RDS(ON)
ROCP = 24kΩ
2)
IOCP,24kΩ
740
830
920
mA
ROCP = 60kΩ
2)
IOCP,60kΩ
300
350
400
mA
VOUT
4.8
5.0
5.2
V
1.1
2.5
Ω
E522.03 Output
Output regulation threshold 1)
IOUT = 350mA
V VIN = 14V
On Resistance at LXT
V VIN = 14V
Overcurrent detection
RDS(ON)
ROCP = 24kΩ
2)
IOCP,24kΩ
490
550
610
mA
ROCP = 60kΩ
2)
IOCP,60kΩ
190
230
270
mA
VOUT
3.2
3.33
3.46
V
1.1
2.5
Ω
E522.04 Output
Output regulation threshold 1)
IOUT = 350mA
V VIN = 14V
On Resistance at LXT
V VIN = 14V
Overcurrent detection
RDS(ON)
ROCP = 24kΩ
2)
IOCP,24kΩ
490
550
610
mA
ROCP = 60kΩ
2)
IOCP,60kΩ
190
230
270
mA
1) Given value is switching threshold at pin SENSE, for V VIN < VOUT regulator provides 100% conductance mode
2) Measured at V VIN = 14V
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 5/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
PRELIMINARY INFORMATION - MAY 29, 2012
PRELIMINARY INFORMATION - MAY 29, 2012
Electrical Characteristics (continued)
(V VIN = 4.5V to 40V, Tamb = -40°C to +125°C, unless otherwise noted. Typical values are at V VIN = 14V and Tamb = +25°C.
Positive currents flow into the device pins.)
Description
Condition
Symbol
Min
Typ
Max
Unit
1.416
1.475
1.534
V
0.7
1.5
Ω
E522.05 Output
Output regulation threshold 1)
IOUT = 500mA
V VIN = 14V
VSENSE
On Resistance at LXT
V VIN = 14V
RDS(ON)
Over-current detection
ROCP = 24kΩ
2)
IOCP,24kΩ
740
830
920
mA
ROCP = 60kΩ
2)
IOCP,60kΩ
300
350
400
mA
1.416
1.475
1.534
V
1.1
2.5
Ω
E522.06 Output
Output regulation threshold 1)
IOUT = 350mA
V VIN = 14V
VSENSE
On Resistance at LXT
V VIN = 14V
RDS(ON)
Overcurrent detection
ROCP = 24kΩ
2)
IOCP,24kΩ
490
550
610
mA
ROCP = 60kΩ
2)
IOCP,60kΩ
190
230
270
mA
VOUT
4.8
5.00
5.2
V
0.44
0.75
Ω
E522.07 Output
Output regulation threshold 1)
IOUT = 1A
V VIN = 14V
On Resistance at LXT
V VIN = 14V
Over-current detection
RDS(ON)
ROCP = 24kΩ
2)
IOCP,24kΩ
1.3
1.45
1.6
A
ROCP = 60kΩ
2)
IOCP,60kΩ
0.5
0.6
0.7
A
VOUT
3.2
3.33
3.46
V
0.44
0.75
Ω
E522.08 Output
Output regulation threshold 1)
IOUT = 1A
V VIN = 14V
On Resistance at LXT
V VIN = 14V
Overcurrent detection
RDS(ON)
ROCP = 24kΩ
2)
IOCP,24kΩ
1.3
1.45
1.6
A
ROCP = 60kΩ
2)
IOCP,60kΩ
0.5
0.6
0.7
A
VSENSE
1.416
1.475
1.534
V
E522.09 Output
Output regulation threshold 1)
IOUT = 1A
V VIN = 14V
On Resistance at LXT
V VIN = 14V
RDS(ON)
0.44
0.75
Ω
ROCP = 24kΩ 2)
IOCP,24kΩ
1.3
1.45
1.6
A
ROCP = 60kΩ
IOCP,60kΩ
0.5
0.6
0.7
A
Overcurrent detection
2)
1) Given value is switching threshold at pin SENSE, for V VIN < VSENSE regulator provides 100% conductance mode
2) Measured at V VIN = 14V
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 6/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
Electrical Characteristics (continued)
(V VIN = 4.5V to 40V, Tamb = -40°C to +125°C, unless otherwise noted. Typical values are at V VIN = 14V and Tamb = +25°C.
Positive currents flow into the device pins.)
Description
Condition
Symbol
Min
fS
0
Typ
Max
Unit
1.75
MHz
Switching
Switching frequency
IOUT < IOCP
tLXT(ON)
260
ns
IOUT ≥ IOCP
tLXT(ON)
100
ns
PGOOD = '1'
tLXT(OFF)
520
ns
IOUT ≥ IOCP;
VSENSE > 1.2V
tLXT(OFF)
1330
ns
IOUT ≥ IOCP;
VSENSE < 1.0V
tLXT(OFF)
2450
ns
Power good detection threshold,
rising edge
VSENSE,th(LH)/
VOUT(NOM)
92.5
%
Power good detection threshold,
falling edge
VSENSE,th(HL)/
VOUT(NOM)
90
%
0.2
Minimum LXT on time
Minimum LXT off time
Power Good Detector
Output voltage at pin PGOOD
VSENSE < VSENSE,th(HL)
IPGOOD = 2mA
VPGOOD
Leakage at pin PGOOD
VSENSE = VOUT,NOM
VPGOOD = 5V
IPGOOD,lk
0.4
V
3
µA
150
μs
IDLE Detector
IDLE detection delay
no switching
TIDLE
70
110
Average LXT duty cycle for IDLE
Discontinuous
operation
DIDLE
1.38
%
Wake-up threshold during IDLE
relative to nominal
VOUT in %
VSENSE,WU
95
%
Wake-up delay after IDLE
VSENSE < VSENSE,WU
TDEL,ACTIVE
10
25
μs
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 7/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
PRELIMINARY INFORMATION - MAY 29, 2012
PRELIMINARY INFORMATION - MAY 29, 2012
7 Typical Operating Characteristics
F_LXT_V
Diagrams showing typical characteristics at V VIN=14V and TAMB=25°, unless otherwise noted
EFF_DEMO_MAWE
Operating Frequency vs. normalized VIN/VOUT
E522.01 Efficiency vs Loadcurrent (VIN 7V, 14V, 24V)
100
90
F_LXT / MHz
Efficiency / %
95
85
80
75
70
65
60
0
50
100
150
200
250
300
350
400
450
500
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
550
1.0
Loadcurrent / mA
EFF,7V
EFF,14V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
V_SWITCH5V_V
VIN/VOUT Ratio
V_SWITCH5V_T
(continuous conduction mode)
5V Sense Threshold vs. Temperature
5V Sense Threshold vs. Supply Voltage VIN
5.20
5.20
5.15
5.15
5.10
5.10
V_Swicth / V
V_Swicth / V
1.5
EFF,24V
5.05
5.00
4.95
5.05
5.00
4.95
4.90
4.90
4.85
4.85
4.80
4.80
-40
-20
0
20
40
60
80
100
120
V_SWITCH3V_T
140
4
8
12
16
Temp. / °C
20
24
28
32
V_SWITCH3V_V
36
VIN / V
(for V VIN<VOUT sense threshold is info only)
3.3V Sense Threshold vs. Supply Voltage VIN
3.45
3.40
3.40
3.35
V_Swicth / V
V_Swicth / V
3.3V Sense Threshold vs. Temperature
3.45
3.30
3.25
3.35
3.30
3.25
3.20
3.20
3.15
3.15
-40
-20
0
20
40
60
80
100
120
140
4
8
12
16
Temp. / °C
24
28
32
36
Adj . Swit ching Threshold vs. Supply VIN
Adj . Swit ching Threshold vs. Temperat ure
1.60
1.60
1.58
1.58
1.56
1.56
V _ S wi c t h / V
V _ S wi c t h / V
20
VIN / V
1.54
1.52
1.50
1.48
1.46
1.44
1.54
1.52
1.50
1.48
1.46
1.44
1.42
1.42
1.40
1.40
1.38
1.38
1.36
1.36
- 40
- 20
0
20
40
60
80
100
120
4
140
T em p. / ° C
8
12
16
20
24
28
32
36
VIN / V
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet QM-No.: 25DS0064E.01
8/24
Seite 1
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
I_ACTIVE_T
T_WAKEUP_T
Supply Current vs. Temperature (Active Mode)
Re-Enable Delay vs. Temperature (Idle-to-Active)
20
260
18
240
16
220
I_VIN / µA
t_del / µs
14
12
10
8
200
180
160
6
140
4
120
2
100
0
-40
-20
0
20
40
60
80
Temp. / °C
100
120
-40
140
-20
0
20
40
60
80
100
120
140
Temp. / °C
I_SLEEP_IDLE_T
Supply Current vs. Temperature (Sleep & Idle Mode)
30
27
21
N / µA
I_VIN / µA
24
18
15
12
9
6
3
0
-50 .0
-3 0.0
-10.0
10.0
30.0
50.0
70.0
90.0
Temp. / °C
I_VIN,SLEEP
11 0.0
130.0
150.0
I_VIN,IDLE
I_OCP1_T
I_OCP2_T
Current Limitation vs. Temperature (500mA Device)
Current Limitation vs. Temperature (350mA Device)
10 00
650
9 00
600
8 50
550
8 00
I_LXT / mA
I_LXT / mA
9 50
7 50
7 00
6 50
6 00
5 50
500
450
400
350
5 00
4 50
300
4 00
250
3 50
200
3 00
2 50
150
-40 .0
-20 .0
0.0
20.0
40.0
60.0
80.0
T emp. / °C
I_OCP,24kOhm
100.0
120.0
140.0
-40.0
0.0
20.0
40.0
Temp.60.0
/ °C
80.0
I_OCP,24kOhm
100.0
120.0
140.0
I_OCP,60kOhm
Current Limit at ion v s. VI N Volt age ( [email protected])
Current Limit at ion v s. Temperat ure ( 1A Dev ic e)
1600
1600
1500
1500
1400
1400
1300
1300
I_LXT / m A
I_LXT / m A
-20.0
I_OCP,60kOhm
1200
1100
1000
900
800
1200
1100
1000
900
800
700
700
600
600
500
500
400
400
-40.0
-20.0
0.0
20.0
40.0
60.0
Tem p. / °C
80.0
I _ OCP,2 4 k Oh m
100.0
120.0
140.0
4.0
I _ OCP,6 0 k Oh m
8.0
12.0
16.0
I _ OCP,3 5 0 m A
20.0
VIN / V
24.0
I _ OCP,5 0 0 m A
28.0
32.0
36.0
I _ OCP,1 A
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet QM-No.: 25DS0064E.01
Seite 1
Seite 1
9/24
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
PRELIMINARY INFORMATION - MAY 29, 2012
PRELIMINARY INFORMATION - MAY 29, 2012
T_GATEDEL_V
I nt ernal FET On- Resist anc e v s. Temperat ure
Propagation Delay Sense to LXT vs VIN Voltage
150.0
1.7
140.0
1.5
130.0
1.3
t_Delay / ns
R_LXT,ON / Ohm
1.9
1.1
0.9
0.7
120.0
110.0
100.0
90.0
80.0
70.0
0.5
60.0
0.3
50.0
40.0
0.1
30.0
-40.0
-20.0
0.0
20.0
40.0
60.0
80.0
100.0
120.0
140.0
Tem p. / °C
3 5 0 m A r a te d
4.0
5 0 0 m A r a te d
6.0
8.0
10.0
1 A r a te d
12.0
14.0
16.0
Suppl y Vol tage / V
Sens e,Rise
18.0
20.0
22.0
24 .0
Sense,Fall
V_ON_T
Typ. VIN Undervoltage Lockout (vs. Temperature)
Enable Threshold at ON vs Temperature
4.20
1.52
4.00
V_ON / V
V_Underv oltage / V
1.50
3.80
3.60
3.40
1.48
1.46
3.20
3.00
1.44
2.80
-40
-20
0
20
40
60
80
Temp. / °C
100
120
1.42
140
-40.0
R_ON_V
-20.0
0.0
20.0
40.0
Temp.60.0
/ °C
Enable
80.0
100.0
120.0
140.0
Dis able
ON Pulldown Resistance vs ON Voltage
10.00
R_ON,PD / MOhm
9.50
9.00
8.50
8.00
7.50
7.00
6.50
6.00
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
V_ON / V
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ELMOS Semiconductor AG
Data Sheet 10/24
QM-No.: 25DS0064E.01
Seite 1
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
8 Functional Description
8.1 General Description
E522.0x product family is a fixed output voltage step-down converter family intended for current-sensitive automotive and general battery driven applications, featuring open loop stability and short current limitation for the
integrated driver transistor. High operating frequency allows the use of small-sized external components.
Integrated IDLE detection provides very low standby currents, significantly reducing the applications total current
consumption. If the application supplied by E522.0x is set into low-current mode (typ. << 1mA, see 8.3), current
consumption at VIN is adapted to typical 12µA only.
The pulse frequency modulation (PFM) scheme does not need a clock signal for operation, providing minimum ON/
OFF time regulation for the internal switch. Furthermore, the PFM scheme allows fastest transient line and load responses without the need for external compensation networks. Adjustable internal current measurement allows
optimal adaption to the inductor without the need for a shunt resistor.
Pin ON
Load
condition
Load
condition
Internal
Signal
“IDLE”
VON < VON,TH
Mode
VOUT
IVIN
SLEEP
0V
8µA
VON > VON,TH
Nominal load
D > DIDLE
“0”
NORMAL
VOUT,nom
150µA
VON > VON,TH
Reduced load
<< 1mA
D < DIDLE
“1”
IDLE
VOUT,nom
- (0%... -5%)
12µA
8.2 Pulse Frequency Modulated Converter
The LXT switch control signal is based on a combination of output voltage VSENSE, input voltage V VIN and measured
switch current. It provides adaptive frequency in the range of 0Hz up to typ. 1.33MHz as seen in typical performance figures.
To avoid unnecessary switching, a minimum ON time of typ. 260ns and OFF time of 520ns is used. ON time will be
reduced below 260ns if over-current is detected. OFF time will automatically be increased in length to limit current
flow during start-up or short circuit to GND at pin LXT or VOUT.
The figure below shows the typical normalized operating frequency in continuous conduction mode:
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 11/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
PRELIMINARY INFORMATION - MAY 29, 2012
PRELIMINARY INFORMATION - MAY 29, 2012
F_LXT_V
F_LXT / MHz
Operating Frequency vs. normalized VIN/VOUT
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
VIN/VOUT Ratio
Figure 3: Operating Frequency vs normalized VIN/VOUT Ratio
8.3 Idle Detection
Idle operation basically is a sequence of standby periods followed by recharge cycles. During IDLE the application
is supplied by the output capacitance. The reference is switched to typ. 95% of nominal value, at which the converter will be reactivated to high power operation. In this way, light load currents are compressed to short recharge
phases, during which a high efficiency can be reached.
1
5
Vout
3
2
Ref
1 Either >110µs no switching or duty cycle falls below
<1:72
the IC enters Idle Mode
2 In Idle Mode the reference is
reduced by 5%
4
3 When VOUT reaches lower
limit, switching is activated
and reference is set to nominal value
4 After 110µs time-out or DC
<1:72 => E522.0x enters Idle
Mode again
Switch
5 Normal Mode is entered
again when load is back to
nominal range
Figure 4: Behaviour in IDLE Mode
E522.0x automatically switches between IDLE and ACTIVE if no external load is applied to E522.0x. The criterion
for the decision is that either no switching activity occurred for longer than typ. 110µs or the duty cycle of the converter falls below a limit of typically 1:72. (see figure 4)
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet Seite 1
12/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
9 Typical Operating Circuit
IN
D2
L2
C6
C5
C4
C3
VIN
R3
ON
L1
LXT
Opt. EMC Filter
PGND
VOUT
C2
D1
R6
C1
SENSE
E522.0x
OCP
R2
R1
AGND
GND
PGOOD
PGOOD
C7
R4
SENSE
VOUT
R5
external programming for E522.05/06/09
Figure 5: Typical operating circuit diagram
Table 2: External Components
Symbol
Min
R1
R2
Typ
Max
Unit
3.3
24
60
Description
kΩ
Pull up resistor for PGOOD
kΩ
OCP configuration resistor
R3
3.3
kΩ
Optional resistor for connection to VIN
R4
30
kΩ
Resistor for output voltage programming
R5
30
kΩ
Resistor for output voltage programming
R6
0.2
Ω
Optional ESR-equivalent resistor
100
µF
Output filter capacitor, low ESR
nF
Output filter capacitor, low ESR, low ESL type
33
µF
Input filter capacitor
C4
220
nF
Input filter capacitor, low ESR, low ESL type
C5
100
nF
EMC capacitor; low ESR, low ESL type
C6
1
nF
EMC capacitor; low ESR, low ESL type
C1
47
C2
C3
1)
33
20
100
C7
Optional AC-coupling capacitor (see chapter 9.2.5)
L1
18
33
82
µH
Inductor LLXT @ E522.01-06
L1
10
22
82
µH
Inductor LLXT @ E522.07-09
L2
EMC ferrite e.g. Würth 742-792-118
D1
Freewheeling diode for LXT, preferred Vishay SS14
D2
Optional reverse polarity protection diode
1) Select for VOUT according to
R4 =R5⋅(
V OUT −V SENSE
)
V SENSE
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ELMOS Semiconductor AG
Data Sheet 13/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
PRELIMINARY INFORMATION - MAY 29, 2012
PRELIMINARY INFORMATION - MAY 29, 2012
9.2 Application / Implementation Hints
The following chapter will give additional recommendations and advices for the implementation of E522.0x, giving
starting values for components during prototyping.
9.2.1 Maximum Input Voltage in case of adjustable output voltage (E522.05/06/09)
The maximum input voltage is defined by the minimum TON,MIN (during over-current limitation) and the requested
output voltage. The following diagram shows the recommended area for the input voltage. If the input voltage is
higher than recommended, due to transient effects the maximum current in the inductor may exceed the configured over-current limitation during start-up or in case of short circuit.
VOUT = requested
VOUT
ILLXT > IOCP
40
38
RECOMMENDED
AREA
36
34
32
30
VOUT = requested
VOUT
IL < IOCP
28
26
VIN [V]
24
22
20
18
16
14
VOUT ≤ VIN
(100% DutyCycle)
12
10
8
6
4
2
39
36
37,5
33
34,5
30
31,5
27
28,5
24
25,5
21
22,5
18
19,5
15
16,5
12
13,5
9
10,5
6
7,5
3
4,5
1,5
0
VOUT [V]
Figure 6: Maximum recommended VIN
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 14/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
9.2.2 Maximum output current E522.05/06/09
E522.0x limits the inductor peak current. Lower end of inductor ripple current depends on TOFF,MIN, the inductance
value and the output voltage. The maximum available output current is less or equal to the average current flowing in the inductance.
The following graph visualizes the relation between these parameters.
Maximum IOUT
L=100µH
1000
L=82µH
L=63µH
900
L=10µH
L=18µH
L=52µH
L=33µH
800
IOUT (mA)
700
600
500
400
300
200
100
0
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
VOUT (V)
Figure 7: Maximum Output Current vs. Ouput Voltage (1A / E522.09)
For example, with an inductor of 18μH and an output voltage of 12V, the minimum available output current is
690mA.
Maximum IOUT
500
L=100µH
450
L=82µH
L=63µH
400
L=52µH
L=33µH
L=18µH
IOUT (mA)
350
300
250
200
150
100
50
0
0
5
10
15
20
25
30
35
40
VOUT (V)
Figure 8: Maximum Output Current vs. Ouput Voltage (500mA / E522.05)
For example, with an inductor of 33μH and an output voltage of 20V, the minimum available output current is
295mA.
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 15/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
PRELIMINARY INFORMATION - MAY 29, 2012
PRELIMINARY INFORMATION - MAY 29, 2012
Maximum IOUT
350
300
L=100uH
L=82uH
L=63uH
250
L=52uH
IOUT (mA)
L=33uH
200
L=18uH
150
100
50
0
0
5
10
15
20
25
30
35
40
VOUT (V)
Figure 8: Maximum Output Current vs. Ouput Voltage (350mA / E522.06)
For example, with an inductor of 33µH and an output voltage of 20V, the minimum available output current is 175mA.
9.2.3 LLXT Inductor Selection
For a given application (in continuous conducting mode), it is either recommended to choose an inductance value
that is suitable for ±15% current ripple at the typical operating frequency or to use the following equations.
Depending on V VIN to VOUT ratio, usually two equations describe the maximum peak-to-peak current ripple in the
inductor LLXT. It can either be calculated from the maximum input voltage at VIN (V VIN,MAX,APP)
T ON , MIN⋅(V VIN , MAX , APP −V OUT , NOM )
I RIPPLE , LXT , PP1=
a)
L LXT
or by the following equation (with VDIODE being the forward voltage drop of the free-wheeling diode)
T OFF ,MIN , NOM⋅(V OUT , NOM +V DIODE )
b)
I
=
RIPPLE , LXT , PP2
L LXT
Take the higher result of both equations into account during choice of the external capacitors ESR (see chapter 9.2.4).
The minimum ripple may either occur at the maximum operation frequency or at the lowest input voltage that is
required for the application. In most cases, the current ripple at peak-operating-frequency can also be calculated
by equation b) above.
To choose a sufficiently high saturation current for the inductor LLXT, consider
- the maximum application load current plus half of the maximum ripple current calculated above and
- the configured current limitation derived from ROCP (to avoid degradation or other effects due to saturation of the inductor core - depending on the magnetic core material)
In general an additional saturation margin of >25% for the inductor current rating is recommended for transient
effects, especially at extreme V VIN to VOUT voltage ratios.
DC resistance of LLXT (referred here as RLXT,DC) reduces efficiency and contributes to the losses in the inductor (combined with AC losses which may arise due the use of high frequency operation). A DC resistance <0.5Ω is recommended for E522.01-06 (<0.25Ω for E522.07-09). At a given load current ILOAD, resistance affects minimum input voltage required to regulate VOUT in the following way
V IN, MIN =V OUT , NOM +I LOAD +( R DS (ON )+R LXT , DC )
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 16/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
9.2.4 COUT Capacitor Selection
During nominal operation electrical serial resistance (ESR) of the capacitor is important to generate a minimum
output voltage ripple of 10mV to 100mV. This ripple is necessary to provide a proper regulation information for
E522.0x. It depends on peripheral elements chosen (LLXT and COUT) and their parasitic behaviour as explained further on.
The ESR of the capacitor COUT (named RESR,COUT, see operating circuit R6) must be high enough to ensure a voltage ripple for VOUT to provide high-frequency switching. The ripple voltage can basically be calculated using the inductor
current ripple (see chapter 9.2.3) by
V RIPPLE ,OUT =R ESR , COUT⋅I RIPPLE , LXT , PP
Electrical serial inductance should be kept as low as possible, what can be achieved by placing a parallel ceramic
type capacitor of <100nF (typ. 33nF).
During IDLE, the application is supplied by the output capacitor COUT. The capacitance, which is necessary to power
the application until E522.0x fully wakes up, can be calculated using the maximum load current step (ILOAD,MAX) and
a maximum tolerable voltage drop (UDROP,MAX) in the following way:
C OUT =
I LOAD , MAX⋅25µs
U DROP ,MAX −R ESR ,COUT⋅I LOAD ,MAX
For example, assuming a maximum load step of 350mA, a tolerable voltage drop of 120mV and RESR,COUT being
120mΩ the output capacitance should be chosen >112µF. For proper active operation, it is necessary to choose
capacitance values >22µF at VOUT.
Take into account, that many capacitor types show a strong temperature and voltage dependency, or may be sensible to high peak currents. Make sure, that at extreme temperatures and voltages the capacitance value is reached.
For automotive environments capacitors of X7R material (or better) may be necessary.
9.2.5 RSENSE, CSENSE Selection for adjustable E522.05/06/09
The resistors RSENSE1 and RSENSE2 have to be chosen high enough to avoid a reduction of the efficiency. A typical current of 50 μA is recommended to avoid sensitivity to noise. The capacitor CSENSE helps to produce a correct ripple
voltage at SENSE pin. Without enough ripple at SENSE pin, the regulation will not be optimal and you could observe
burst pulses at LXT pin. When the ripple voltage is high enough, you should see a stable operating frequency. To
choose CSENSE, start without any capacitor and increase the value until you are satisfied with the regulation.
9.2.6 Rectification- / Freewheeling Diode Selection
The free-wheeling diode must have a low forward voltage (to increase efficiency) as well as a very low reverse recovery time of typically 10ns. In general, a fast Schottky type diode is recommended. High parasitic capacitance
as well as long reverse recovery time may cause additional radiated emission at LXT. Parasitic capacitance of this
diode decreases the overall efficiency and causes current spikes when the LXT driver turns on.
During IDLE, consider the leakage of the free-wheeling diode at nominal converter output voltage which will contribute to the overall current consumption (see IDLE adaption, chapter 9.2.9). In general, a bipolar diode can provide
lower leakage current and parasitic capacitance, but may also have a negative impact on efficiency due to higher
forward voltage drop. Reverse recovery time of the diode must be taken into account.
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 17/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
PRELIMINARY INFORMATION - MAY 29, 2012
PRELIMINARY INFORMATION - MAY 29, 2012
9.2.7 Over-Current Configuration at OCP
To adjust the internal over-current limitation of the LXT high-side driver to a value of ILIM, the resistor between OCP
and GND can be chosen by interpolation between the specified values (in the range of 24kΩ to 60kΩ) by
ROCP =
I OCP ,24k Ω
⋅24k Ω ∣ I LIM ⩽I OCP ,24 k Ω
I LIM
Choice the current ILIM with respect to the maximum usable current of the inductor LLXT. Capacitive load at pin OCP
has to be avoided due to stability reasons. It must not exceed 100pF.
9.2.8 VIN Capacitor Selection
VIN input capacitance value can be chosen from an acceptable voltage ripple V VIN,RIPPLE,MAX (defined by the overall
application requirements) together with ILIM (configured by ROCP) and the ESR of VIN capacitor by
C VIN =
I LIM t ON,MIN
V VIN , RIPPLE, MAX I LIM R ESR, C
VIN
Both, the result of above equation, but also a minimum of 22µF are to be taken into account. Additionally, a parallel low ESR and low ESL ceramic capacitor type has to be placed (typ. 220nF).
Considerations regarding temperature and voltage dependency apply to VIN capacitors as well (see chapter 9.2.4),
especially voltage dependency.
9.2.9 Idle Adaption Options
IDLE / ACTIVE state detection can be adapted to a given application by consideration of the following external influences:
a) During start-up, the energy within the inductor (approximately 0.5 x LLXT x ILIM)2 has to be consumed by the load
within the IDLE detection time-out (to stay in ACTIVE mode). It is proportional to the inductance LLXT and to the
square of configured OCP current limit.
b) At nominal operation, the power which is transferred to the output in discontinuous operation depends on the
inductance at LLXT, the current which is build up during TON,MIN and the duty-cycle IDLE condition.
This detection mechanism allows to shift the detection threshold proportional to 1/LLXT. Note, that the output
power in this case also depends on the square of charging voltage V VIN-VOUT, which may require to adapt LLXT to the
typical application input voltage.
c) In general, cross-coupling between high voltage switching of LXT and input SENSE is to be avoided. In case that
practically it may not be completely avoidable, a third effect based on the amount of coupling must be considered.
Distortions can lead to self-excitation of the regulator, charging the output until the lower end of the output voltage ripple crosses the regulation point. The average of the output voltage ripple (1/2 for triangular ripple) has to be
discharged by the load before a time-out is detected (typ. 110µs - to stay in ACTIVE mode).
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 18/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
Depending on choice of external components, the rectification / free-wheeling diode leakage current has to be
taken into account, because it poses a load to E522.0x, too. If it generates sufficient switching activity to trigger
the duty cycle IDLE condition, the converter will provide nominal output voltage.
Consider the leakage current of the free-wheeling diode for a reverse voltage of VOUT and the maximum ambient
temperature. The above described measures a,b,c (in most cases choice of inductance LLXT) can be used to adapt
the applications dimensioning to this additional load.
9.2.10 Misc Application Remarks
Optional, regarding VIN voltage supervision, the accurate threshold at pin ON can be used to implement undervoltage lock-out for the converter, automatically switching to sleep mode if necessary. In such cases a resistive divider between VIN and GND, connected to ON can be used. The threshold is defined by
V VIN ,MIN = V ON ,TH 1
R2
R1
Choose the divider impedance significantly lower than the typical input impedance of 7MΩ at pin ON to avoid inaccuracy. Note, that the divider current directly contributes to the application current consumption.
For reverse polarity protection a diode (or comparable reverse voltage protection measure) for VIN is recommended. In EMC sensitive environments additional decoupling measures at VIN are recommended.
10 Ordering Information
Product ID
VOUT
IOUT
Ambient Temp. Range
Package
E522.01_QFN20L4
5V
500mA
-40°C to +125°C
QFN20L4
E522.02_QFN20L4
3.3V
500mA
-40°C to +125°C
QFN20L4
E522.03_QFN20L4
5V
350mA
-40°C to +125°C
QFN20L4
E522.04_QFN20L4
3.3V
350mA
-40°C to +125°C
QFN20L4
E522.05_QFN20L4
1.5V to 40V
500mA
-40°C to +125°C
QFN20L4
E522.06_QFN20L4
1.5V to 40V
350mA
-40°C to +125°C
QFN20L4
E522.07_QFN20L4
5V
1A
-40°C to +125°C
QFN20L4
E522.08_QFN20L4
3.3V
1A
-40°C to +125°C
QFN20L4
E522.09_QFN20L4
1.5V to 40V
1A
-40°C to +125°C
QFN20L4
E522.01_TSSOP16
5V
500mA
-40°C to +125°C
TSSOP16
E522.02_TSSOP16
3.3V
500mA
-40°C to +125°C
TSSOP16
E522.03_TSSOP16
5V
350mA
-40°C to +125°C
TSSOP16
E522.04_TSSOP16
3.3V
350mA
-40°C to +125°C
TSSOP16
E522.05_TSSOP16
1.5V to 40V
500mA
-40°C to +125°C
TSSOP16
E522.06_TSSOP16
1.5V to 40V
350mA
-40°C to +125°C
TSSOP16
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 19/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
PRELIMINARY INFORMATION - MAY 29, 2012
PRELIMINARY INFORMATION - MAY 29, 2012
11 Package Reference
11.1 Package Reference QFN20L4
The E522.0x family members are available in a Pb free, RoHS compliant, QFN20L4 plastic package. For dimension
details refer to JEDEC MO-220 VGGD-5.
The package is classified to Moisture Sensitivity Level 3 (MSL 3) according to JEDEC J-STD-020C.
It has been qualified according to IEC 86 part 2-20 for the following soldering profile:
1. (200±5) °C, dwell time (50±5) s
2. (260±5) °C, dwell time <10 s
11.2 Package Reference TSSOP16
The E522.0x family members are available in a Pb free, RoHS compliant, TSSOP16 plastic package. For dimension
details refer to JEDEC MO-153 AB.
The package is classified to Moisture Sensitivity Level 3 (MSL 3) according to JEDEC J-STD-020C.
It has been qualified according to IEC 86 part 2-20 for the following soldering profile:
1. (200±5) °C, dwell time (50±5) s
2. (260±5) °C, dwell time <10 s
E522.01-06 max. Package Power Dissipation
max. Device Power vs Ambient Temperature
0,6
Power [W]
0,5
0,4
max Power QFN20L4
0,3
max Power TSSOP16 Ext.
Heatsink 30K/W
max Power TSSOP16
max Power TSSOP16 Ext.
Heatsink 10K/W
0,2
0,1
0
70
80
90
100
110
120
130
140
Ambient Temperature [°C]
Figure 9: Package power dissipation E522.01-06
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 20/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
E522.07/08/09 max. Package Power Dissipation
Device Power vs Ambient Temperature
1,2
Package Power Dissipation [W]
1,1
1
0,9
max Pow er
QFN20L4
0,8
0,7
0,6
0,5
0,4
70
80
90
100
110
120
130
140
Ambient Temperature [°C]
Figure 10: Package power dissipation E522.07-09
11.3 Marking Top Side
ÿÿ
ÿÿ
ÿÿ
ÿÿ
Elmos Logo
52201
XXXSL
YWWR@
Signature
Explanation
52201
ELMOS project number
A
ELMOS project revision
code
XXX
Production lot number
S
Assembler code
L
Production line code
YWW
Year and week of assembly
R
Mask revision code
@
ELMOS internal code
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 21/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
PRELIMINARY INFORMATION - MAY 29, 2012
Date : 05.01.2012
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
PRELIMINARY INFORMATION - MAY 29, 2012
Author: ASto
20 Lead Quad Flat Non Leaded Package
11.4 Package Outline QFN20L4
(QFN20L4)
QM-No.: 08SP0689.02
Package Outline and Dimensions are according JEDEC MO-220 K, variant VGGD-5
Description
min
mm
typ
max
min
inch
typ
max
A
0.80
0.90
1.00
0.031
0.035
0.039
Stand off
A1
0.00
0.02
0.05
0.000
0.00079
0.002
Thickness of terminal leads, including lead finish
A3
--
0.20 REF
--
--
0.0079 REF
--
b
0.18
0.25
0.30
0.0071
0.0098
0.012
Package height
Width of terminal leads
Symbol
D/E
--
4.00 BSC
--
--
0.157 BSC
--
D2 / E2
2.50
2.65
2.80
0.098
0.104
0.110
e
--
0.50 BSC
--
--
0.020 BSC
--
Length of terminal for soldering to substrate
L
0.35
0.40
0.45
0.014
0.016
0.018
Number of terminal positions
N
Package length / width
Length / width of exposed pad
Lead pitch
20
20
Note: the mm values are valid, the inch values contains rounding errors
Note 1: for assembler specific pin1 identification please see QM-document 08SP0363.xx (Pin 1 Specification)
Page 1 of 1
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 22/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
PACKAGE OUTLINE SPECIFICATION
Date : 04.01.2012
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
PRELIMINARY INFORMATION - MAY 29, 2012
Author: ASto
16 Lead Thin Shrink Small Outline Package
11.5 Package Outline TSSOP16
(TSSOP16)
QM-No.: 08SP0669.05
Package Outline and Dimensions are according JEDEC MO-153 F, variant AB.
Description
Symbol
min
mm
typ
max
min
inch
typ
max
0.047
Package height
A
--
--
1.20
--
--
Stand off
A1
0.05
--
0.15
0.002
--
0.006
Package body thickness
A2
0.80
1.00
1.05
0.031
0.039
0.041
Width of terminal leads, inclusive lead finish
b
0.19
--
0.30
0.007
--
0.012
Thickness of terminal leads, inclusive lead finish
c
0.09
--
0.20
0.004
--
0.008
Package length
D
4.90
5.00
5.10
0.193
0.197
0.201
4.50
0.169
Package width
Package body width
Lead pitch
Length of terminal for soldering to substrate
E
6.40 BSC
E1
4.30
e
4.40
0.252 BSC
0.65 BSC
0.173
0.177
0.026 BSC
L
0.45
0.60
0.75
0.018
0.024
0.030
Angle of lead mounting area
phi [°]
0
--
8
0
--
8
mold release angle
phi1 [°]
12 REF
12 REF
N
16
16
Number of terminal positions
Note: the mm values are valid, the inch values contains rounding errors
Note 1: for assembler specific pin1 identification please see QM-document 08SP0363.xx (Pin 1 Specification)
Page 1 of 1
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 23/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
PACKAGE OUTLINE SPECIFICATION
WARNING – Life Support Applications Policy
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please ensure that ELMOS Semiconductor AG products are used within specified operating ranges as set forth in
the most recent product specifications.
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Circuit diagrams may contain components not manufactured by ELMOS Semiconductor AG, which are included as
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: +49893183700
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: +12488653200
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: +862151785178
Sales and Application Support Office Singapore
ELMOS Semiconductor Singapore Pte Ltd.
60 Alexandra Terrace • #09-31 The Comtech • Singapore 118502
: +6566351141
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: [email protected]
© ELMOS Semiconductor AG, 2012. Reproduction, in part or whole, without the prior written consent of ELMOS Semiconductor AG, is prohibited.
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 24/24
QM-No.: 25DS0064E.01
E522.01, E522.02, E522.03, E522.04, E522.05, E522.06, E522.07, E522.08, E522.09
LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY
PRELIMINARY INFORMATION - MAY 29, 2012