1N1199A thru 1N1206AR Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 12 A Features • High Surge Capability • Types up to 1000 V VRRM DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Symbol Conditions 1N1199 (R) 1N1200 (R) 1N1202 (R) 1N1204 (R) 1N1206 (R) Unit V VRRM 50 100 200 VRMS 35 70 140 280 420 V VDC 50 100 200 400 600 V 400 600 Continuous forward current IF TC ≤ 150 °C 12 12 12 12 12 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 240 240 240 240 240 A Operating temperature Storage temperature Tj Tstg -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR Conditions 1N1199 (R) 1N1200 (R) 1N1202 (R) 1N1204 (R) 1N1206 (R) Unit V IF = 12 A, Tj = 25 °C VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 175 °C 1.1 10 15 1.1 10 15 1.1 10 15 1.1 10 15 1.1 10 15 μA mA 2.00 2.00 2.00 2.00 2.00 °C/W Thermal characteristics Thermal resistance, junction case www.genesicsemi.com RthJC 1 1N1199A thru 1N1206AR www.genesicsemi.com 2