MICROSEMI UPS5100

UPS5100
5 A High Voltage Schottky Barrier Rectifier
KEY FEATURES
DESCRIPTION
In addition to its size advantages,
Powermite3® package features include a full
metallic bottom that eliminates the
possibility of solder flux entrapment during
assembly, and a unique locking tab acts as
an integral heat sink. Its innovative design
makes this device ideal for use with
automatic insertion equipment.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
WWW . Microsemi .C OM
In Microsemi’s new Powermite3® SMT
package, these high efficiency ultrafast
rectifiers offer the power handing
capabilities previously found only in
much larger packages. They are ideal
for SMD applications that operate at
high frequencies.
! High power surface mount
package.
! Guard Ring die construction for
transient protection.
! Silicon Schottky rectifiers no
reverse voltage recovery.
! Internal heat sink locking tabs
! Low forward voltage.
! Full metallic bottom eliminates
flux entrapment
! Compatible with automatic
insertion equipment
! Low profile-maximum height of
1mm supplied in 16 mm tape
reel- 5000 units/ 13” reel.
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
APPLICATIONS/BENEFITS
RMS Reverse Voltage
V R (RMS)
70
V
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on Rated Load@ Tc =80 ºC
Storage Temperature
Io
5
A
IFSM
100
A
! Switching and Regulating Power
Supplies.
! Charge Pump Circuits.
! Reduces reverse recovery loss
due to low IRM.
T stg
-65 to +150
ºC
Operating Temperature
T op
-65 to +125
ºC
! Small foot print
190 X 300 mils
1:1 Actual size
THERMAL CHARACTERISTICS
(UNLESS OTHERWISE SPECIFIED)
Thermal Resistance
Junction-to Bottom
Rja (1)
2.5
ºC/Watt
(1) When Mounted on PC board with 2 ounce copper pattern.
UPS5100
Copyright  2001
Rev. 0, 2003-02-12
Microsemi
Page 1
UPS5100
5 A High Voltage Schottky Barrier Rectifier
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
Symbol
Typ.
Max
0.75
0.58
0.84
0.67
0.81
0.64
0.90
0.73
VFm
VBR
IR = 0.2 mA
Irm
VR = 100V, Tj = 25ºC
VR = 100V, Tj = 125 ºC
15
10
CT
VR = 4 V; F = 1 MHZ
150
Reverse Current (Note1)
Capacitance
Min
IF = 5 A , Tj = 25 ºC
IF = 5 A , Tj = 125 ºC
IF = 10 A , Tj = 25 ºC
IF = 10 A , Tj = 125 ºC
Forward Voltage (Note 1)
Reverse Break Down Voltage
(Note 1)
Conditions
100
Units
V
V
200
20
µA
mA
pF
Note: 1 Short duration test pulse used to minimize self – heating effect.
Copyright  2001
Rev. 0, 2003-02-12
Microsemi
Page 2
WWW . Microsemi .C OM
Parameter
UPS5100
5 A High Voltage Schottky Barrier Rectifier
WWW . Microsemi .C OM
PAD LAYOUT
ELECTRICALS
Copyright  2001
Rev. 0, 2003-02-12
Microsemi
Page 3
UPS5100
5 A High Voltage Schottky Barrier Rectifier
WWW . Microsemi .C OM
16 mm TAPE
13 INCH REEL
MECHANICAL
PRODUCT PRELIMINARY DATA – Information contained in this document is pre-production
data, and is proprietary to Microsemi Corp. It may not be modified in any way without the express
written consent of Microsemi Corp. Product referred to herein is not guaranteed to achieve
preliminary or production status and product specifications, configurations, and availability may
change at any time.
Copyright  2001
Rev. 0, 2003-02-12
Microsemi
Page 4
UPS5100
5 A High Voltage Schottky Barrier Rectifier
WWW . Microsemi .C OM
NOTES:
NOTES
Copyright  2001
Rev. 0, 2003-02-12
Microsemi
Page 5
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.