ETC AD7890AN

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Changes in accordance with NOR 5962-R106-96. – sbr
96-04-16
M. A. Frye
B
Changes in accordance with NOR 5962-R255-97. – drw
97-03-31
Raymond Monnin
C
Change the limit of bipolar zero error test, table I, sheet 5. Editorial changes
throughout. - drw
01-09-20
Raymond Monnin
REV
SHEET
REV
C
C
SHEET
15
16
REV STATUS
REV
C
C
C
C
C
C
C
C
C
C
C
C
C
C
OF SHEETS
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PMIC N/A
PREPARED BY
Sandra Rooney
STANDARD
MICROCIRCUIT
DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
http://www.dscc.dla.mil
CHECKED BY
Sandra Rooney
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
Michael A. Frye
DRAWING APPROVAL DATE
MICROCIRCUIT, LINEAR, 8-CHANNEL, 12-BIT
SERIAL, DATA ACQUISITION SYSTEM,
MONOLITHIC SILICON
96-03-27
AMSC N/A
REVISION LEVEL
C
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
1 OF
5962-95615
16
5962-E276-01
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the
Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the
PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
-
95615
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
M
L
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type. The device type identify the circuit function as follows:
Device type
Generic number
01
Circuit function
AD7890-10
8-channel, 12-bit serial, data acquisition system
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
M
Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
Descriptive designator
Terminals
Package style
J
L
GDIP1-T24 or CDIP2-T24
GDIP3-T24 or CDIP4-T24
24
24
Dual-in-line
Dual-in-line
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
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1.3 Absolute maximum ratings. 1/
VDD to AGND .................................................................................................................
VDD to DGND .................................................................................................................
Analog input voltage to AGND.......................................................................................
Reference input voltage to AGND .................................................................................
Digital input voltage to DGND........................................................................................
Digital output voltage to DGND......................................................................................
Junction temperature (TJ) ..............................................................................................
Power dissipation (PD) ...................................................................................................
Thermal resistance, junction-to-ambient (θJA) ...............................................................
Thermal resistance, junction-to-case (θJC) ....................................................................
Lead temperature (soldering, 10 seconds)....................................................................
-0.3 V dc to +7 V dc
-0.3 V dc to +7 V dc
±17 V dc
-0.3 V dc to VDD + 0.3 V dc
-0.3 V dc to VDD + 0.3 V dc
-0.3 V dc to VDD + 0.3 V dc
+150°C
450 mW
70°C/W
See MIL-STD-1835
+300°C
1.4 Recommended operating conditions.
Ambient operating temperature range........................................................................... -55°C to +125°C
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in
the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the
solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
1/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
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REVISION LEVEL
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3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Ideal input/output table. The ideal input/output table shall be as specified on figure 2.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space
limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the
RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535
and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain
the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 81 (see MIL-PRF-38535, appendix A).
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TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Min
Unit
Max
Signal to noise + distortion
ratio
SNR
fIN = 10 kHz sine wave,
fSAMPLE = 100 kHz
VDD = +4.75 V dc
Total harmonic distortion
THD
fIN = 10 kHz sine wave,
fSAMPLE = 100 kHz
VDD = +4.75 V dc
1, 2, 3
01
77
dB
Peak harmonic or spurious
distortion
PHN
fIN = 10 kHz sine wave,
fSAMPLE = 100 kHz
1, 2, 3
01
78
dB
CI
fIN = 10 kHz sine wave,
VDD = +4.75 V dc
1, 2, 3
01
80
dB
RES
1, 2, 3
01
12
Bits
MRES
1, 2, 3
01
12
Bits
RA
1, 2, 3
01
±1
LSB
Differential nonlinearity
DNL
1, 2, 3
01
±1
LSB
Positive full-scale error
PFSE
1, 2, 3
01
±2.5
LSB
FSE
1, 2, 3
01
2
LSB
1, 2, 3
01
±2
LSB
BZE
1, 2, 3
01
±5
LSB
BZEM
1, 2, 3
01
2
LSB
Input voltage range
VIN
1, 2, 3
01
-10
+10
V
Input resistance
RIN
1, 2, 3
01
20
VOUT
1, 2, 3
01
0
Channel-to-channel
isolation
Resolution
Minimum resolution for
which no missing codes
are guaranteed
Relative accuracy
Full-scale error match 2/
Negative full-scale error
Bipolar zero error
Bipolar zero error match
Mux out output voltage
range
NFSE
VDD = +4.75 V dc
1, 2, 3
01
70
dB
kΩ
2.5
V
See footnotes at end of table.
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TABLE I. Electrical performance characteristics - continued.
Test
Symbol
Conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Unit
Min
Max
Mux out output resistance
ROUT
1, 2, 3
01
3
5
kΩ
SHA IN input voltage range
VSIN
1, 2, 3
01
0
2.5
V
SHA IN input current
ISIN
1, 2, 3
01
-50
+50
nA
REF IN input voltage range
VRIN
1, 2, 3
01
2.375
2.625
V
Input impedance
RRIN
1, 2, 3
01
1.6
REF OUT voltage
VROUT
1
01
2.49
2.510
2.475
2.525
VSIN = 2.49 V
Resistor connected to internal
reference node
2, 3
Logic input high voltage
VINH
VDD = 5 V ±5%
1, 2, 3
01
Input low voltage
VINL
VDD = 5 V ±5%
1, 2, 3
01
IIN
VIN = 0 V to VDD
1, 2, 3
01
-10
4
Input current
kΩ
V
2.4
V
0.8
V
+10
µA
Output high voltage
VOH
ISOURCE = 200 µA, VDD = 4.75 V
1, 2, 3
01
Output low voltage
VOL
ISINK = 1.6 mA, VDD = 4.75 V
1, 2, 3
01
0.4
V
V
Conversion time 3/
tCONV
fCLKIN = 2.5 MHz, VDD = 4.75 V,
MUX OUT connected to SHA
IN
9, 10, 11
01
5.9
µs
Supply voltage
VDD
±5% for specified performance
1, 2, 3
01
5
V
Supply current 4/
IDD
Logic inputs = 0 V or VDD
1, 2, 3
01
10
mA
Power dissipation
PD
1, 2, 3
01
50
mW
See footnotes at end of table.
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TABLE I. Electrical performance characteristics - continued.
Test
Symbol
Conditions 1/, 3/, 5/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Unit
Min
Max
2.5
Master clock frequency 6/
fCLKIN
9, 10, 11
01
0.1
Master clock input low time
tCLKINL
9, 10, 11
01
0.3 x
tCLKIN
ns
Master clock input high time
tCLKINH
9, 10, 11
01
0.3 x
tCLKIN
ns
Digital output rise time 7/
tR
9, 10, 11
01
25
ns
Digital output fall time 7/
tF
9, 10, 11
01
25
ns
tCONVERT
9, 10, 11
01
5.9
µs
tCST
9, 10, 11
01
RFS low to SCLK falling
edge
t1
9, 10, 11
01
tCLKINH
+ 50
ns
RFS low to valid delay 8/
t2
9, 10, 11
01
25
ns
SCLK high pulse width
t3
9, 10, 11
01
tCLKINH
ns
SCLK low pulse width
t4
9, 10, 11
01
tCLKINL
ns
SCLK rising edge to data
valid delay 8/
t5
9, 10, 11
01
20
ns
SCLK rising edge to RFS
delay
t6
9, 10, 11
01
40
ns
Bus relinquish time after
rising edge of SCLK 9/
t7
9, 10, 11
01
50
ns
TFS low to SCLK falling edge
t8
9, 10, 11
01
0
tCLKIN
+ 50
ns
t9
9, 10, 11
01
0
ns
t10
9, 10, 11
01
20
ns
Conversion time
CONVST pulse width
Data valid to TFS falling
edge setup time
(A2 address bit)
Data valid to SCLK falling
edge setup time
MHz
100
ns
See footnotes at end of table.
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TABLE I. Electrical performance characteristics - continued.
Test
Symbol
Conditions 1/, 3/, 5/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Min
Unit
Max
Data valid to SCLK falling
edge hold time
t11
9, 10, 11
01
10
ns
TFS to SCLK falling edge
hold time
RFS low to SCLK falling
edge setup time
t12
9, 10, 11
01
20
ns
t13
9, 10, 11
01
20
ns
RFS low to data valid delay
8/
t14
9, 10, 11
01
SCLK high pulse width
t15
9, 10, 11
01
50
ns
SCLK low pulse width
t16
9, 10, 11
01
50
ns
SCLK rising edge to data
valid delay 8/
t17
9, 10, 11
01
RFS to SCLK falling edge
hold time
Bus relinquish time after
rising edge of RFS
t18
9, 10, 11
01
t19
9, 10, 11
01
50
ns
Bus relinquish time after
rising edge of SCLK 9/
t19A
9, 10, 11
01
90
ns
TFS low to SCLK falling edge
setup time
t20
9, 10, 11
01
20
ns
Data valid to SCLK falling
edge setup time
t21
9, 10, 11
01
10
ns
Data valid to SCLK falling
edge hold time
t22
9, 10, 11
01
15
ns
TFS low to SCLK falling edge
hold time
t23
9, 10, 11
01
40
ns
1/
2/
3/
4/
5/
6/
7/
8/
9/
40
ns
35
ns
20
ns
VDD = +5.25 V, AGND = DGND = 0 V, REF IN = +2.5 V, fCLKIN = 2.5 MHz external, MUX OUT connected to SHA IN.
Full-scale error match applied to both positive and negative full scale.
Subgroups 9, 10, and 11 are tested initially and after any changes which may affect these parameters. See figures 3 and 4.
Analog inputs must be at 0 V to achieve correct power-down current.
All input signals are specified with tr = tf = 5 ns (10% to 90% 0f 5 V) and timed from a voltage level of 1.6 V. Tested initially
and after any design changes which may affect these parameters.
Production tested with fCLKIN at 2.5 MHz. It is guaranteed by characterization to operate at 100 kHz.
Specified using 10% and 90% points on waveform of interest.
These numbers are measured with the load circuit of figure 3 and defined as the time required for the output to cross 0.8 V
or 2.4 V.
These numbers are derived from the measured time taken by the data output to change 0.5 V when loaded with the circuit
of figure 3. The measured number is then extrapolated back to remove effects of charging or discharging the 50 pF
capacitor. This means that the times quoted in the timing characteristics are the true bus relinquish times of the part and as
such are independent of external bus loading capacitances.
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Device type
01
Case outlines
J and L
Terminal
number
Terminal symbol
1
AGND
2
SMODE
3
DGND
4
CEXT
5
CONVST
6
CLK IN
7
SCLK
8
TFS
9
RFS
10
DATA OUT
11
DATA IN
12
VDD
13
MUX OUT
14
SHA IN
15
AGND
16
VIN1
17
VIN2
18
VIN3
19
VIN4
20
VIN5
21
VIN6
22
VIN7
23
VIN8
24
REF OUT/REF IN
FIGURE 1. Terminal connections.
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Analog Input
Digital output code transition
+FSR/2 – 1 LSB (9.995117 V)
011 . . . 110 to 011 . . . 111
+FSR/2 – 2 LSBs (9.990234 V)
011 . . . 101 to 011 . . . 110
+FSR/2 – 3 LSBs (9.985352 V)
011 . . . 100 to 011 . . . 101
AGND + 1 LSB (0.004883 V)
000 . . . 000 to 000 . . . 000
AGND (0.000000 V)
111 . . . 111 to 000 . . . 000
AGND – 1 LSB (0.004883 V)
111 . . . 110 to 111 . . . 111
-FSR/2 + 3 LSBs (-9.985352 V)
100 . . . 010 to 100 . . . 011
-FSR/3 + 2 LSBs (-9.990234 V)
100 . . . 001 to 100 . . . 010
-FSR/2 + 1 LSB (-9.995117 V)
100 . . . 000 to 000 . . . 000
FIGURE 2. Ideal in/output code table.
FIGURE 3. Load circuit for access time and bus relinquish time.
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FIGURE 4. Timing waveforms.
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FIGURE 4. Timing waveforms - continued.
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FIGURE 4. Timing waveforms - continued.
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4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be
in accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, D, or E. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
test method 1015.
(2) TA = +125°C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table II herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table II herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for
groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a.
Tests shall be as specified in table II herein.
b.
Subgroups 4, 5, 6, 7, and 8 in table I, method 5005 of MIL-STD-883 shall be omitted.
c.
Subgroups 9, 10, 11 are tested initially and after any design changes which may affect the parameters in those
subgroups.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-95615
A
REVISION LEVEL
C
SHEET
14
TABLE II. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
Device
class Q
Device
class V
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3, 1/, 2/
9, 10, 11
1, 2, 3, 2/
9, 10, 11
1, 2, 3, 1/, 2/
9, 10, 11
1, 2, 3, 2/
9, 10, 11
1, 2, 3, 1/, 2/
9, 10, 11
1, 2, 3, 2/
9, 10, 11
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
---
---
---
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
1/ PDA applies to subgroup 1.
2/ Subgroups 9, 10, 11 are tested initially and after any design changes which may affect the parameters in those
subgroups.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, D, or E. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method
1005 of MIL-STD-883.
b.
TA = +125°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness
assured (see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table II herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All
device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at
TA = +25°C ±5°C, after exposure, to the subgroups specified in table II herein.
c.
When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-95615
A
REVISION LEVEL
C
SHEET
15
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device
classes Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering
microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43216-5000, or telephone
(614) 692-0547.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to
this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DSCC-VA.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-95615
A
REVISION LEVEL
C
SHEET
16
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 01-09-20
Approved sources of supply for SMD 5962-95615 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next
dated revision of MIL-HDBK-103 and QML-38535.
Standard
microcircuit drawing
PIN 1/
5962-9561501MLA
5962-9561501MJA
Vendor
CAGE
number
24355
3/
Vendor
similar
PIN 2/
AD7890SQ-10/QML
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from an approved source.
Vendor CAGE
number
24355
Vendor name
and address
Analog Devices
Rt 1 Industrial Park
PO Box 9106
Norwood, MA 02062
Point of contact:
Bay F-1
Raheen Ind. Estate
Limerick, Ireland
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.