TYPICAL PERFORMANCE CURVES
APT200GT60JRDL
APT200GT60JRDL
600V, 200A, VCE(ON) = 2.0V Typical
Resonant Mode Combi IGBT®
The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation
of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
• Ultra soft recovery diode
• ZVS Phase Shifted Bridge
• Low Tail Current
• RBSOA and SCSOA Rated
• Resonant Mode Switching
• Integrated Gate Resistor
• High Frequency Switching to 50KHz
Low EMI, High Reliability
• Ultra Low Leakage Current
• Phase Shifted Bridge
C
• Induction heating
• RoHS Compliant
G
• High Frequency SMPS
E
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Parameter
APT200GT60JRDL
VCES
Collector-Emitter Voltage
600
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
195
I C2
Continuous Collector Current @ TC = 100°C
100
SSOA
PD
TJ,TSTG
Pulsed Collector Current
file # E145592
• Welding
• Low forward Diode Voltage (VF)
I CM
7
22
TO S
"UL Recognized"
ISOTOP ®
• Low Forward Voltage Drop
Symbol
C
G
Typical Applications
Features
E
E
1
UNIT
Volts
Amps
600
Switching Safe Operating Area @ TJ = 150°C
600A @ 600V
595
Total Power Dissipation
Operating and Storage Junction Temperature Range
Watts
-55 to 150
°C
STATIC ELECTRICAL CHARACTERISTICS
MIN
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA)
600
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
(VCE = VGE, I C = 4mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 200A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 200A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
TYP
MAX
3
4
5
1.6
2.0
2.5
Gate-Emitter Leakage Current (VGE = ±30V)
μA
1500
600
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Volts
2.5
50
2
Units
nA
Rev A 4-2009
Characteristic / Test Conditions
052-6357
Symbol
APT200GT60JRDL
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
3
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
SSOA
Switching Safe Operating Area
td(on)
tr
td(off)
tf
Eoff
td(on)
tr
td(off)
tf
8650
VGE = 0V, VCE = 25V
546
f = 1 MHz
1180
Gate Charge
7.5
VGE = 15V
946
VCE = 300V
58
I C = 200A
430
15V, L = 100μH,VCE = 600V
Current Rise Time
VCC = 400V
160
Turn-off Delay Time
VGE = 15V
952
I C = 200A
212
RG = 2.2Ω
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
TJ = +25°C
5
71
Current Rise Time
VCC = 400V
157
Turn-off Delay Time
VGE = 15V
1030
Current Fall Time
I C = 200A
202
Turn-on Delay Time
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
RG = 2.2Ω
44
Turn-on Switching Energy
V
nC
ns
μJ
19290
Inductive Switching (125°C)
Eon2
pF
9193
6
UNIT
A
72
Current Fall Time
MAX
600
Inductive Switching (25°C)
Turn-on Delay Time
Eon1
Eoff
TYP
Capacitance
TJ = 150°C, R G = 4.3Ω, VGE =
Eon1
Eon2
MIN
55
TJ = +125°C
ns
μJ
10460
66
20210
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.21
RθJC
Junction to Case (DIODE)
.61
WT
VIsolation
°C/W
Package Weight
29.2
gm
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
2500
Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on
switching loss. (See Figures 21, 22.)
Rev A 4-2009
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
052-6357
UNIT
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
APT200GT60JRDL
250
V
GE
IC, COLLECTOR CURRENT (A)
TJ= 125°C
175
TJ= 150°C
TJ= 25°C
150
125
TJ= 55°C
100
75
50
25
250
200
150
100
TJ= 25°C
50
TJ= -55°C
TJ= 125°C
0
2
4
10V
250
200
9V
150
100
8V
50
0
5V
0
4
8
12 16
20 24
28 32
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 25°C)
20
250μs PULSE
TEST<0.5 % DUTY
CYCLE
300
11V
300
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (TJ = 25°C)
350
0
13/15V
12V
350
200
0
6
8
10
I = 200A
C
T = 25°C
J
15
VCE = 120V
VCE = 300V
10
VCE = 480V
5
0
12
0
250
500
750
GATE CHARGE (nC)
FIGURE 4, Gate charge
6
TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
5
4
IC = 400A
3
IC = 200A
IC = 100A
2
1
0
6
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
4
IC = 400A
3
IC = 200A
IC = 100A
2
1
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
50
75
100 125
150
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
0
25
250
1.10
200
IC, DC COLLECTOR CURRENT (A)
1.05
1.00
150
0.95
0.90
100
0.85
0.80
0.75
0.70
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
Rev A 4-2009
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
1.15
1000
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
50
0
25
50
75
100
125
150
TC, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature
052-6357
IC, COLLECTOR CURRENT (A)
400
= 15V
VGE, GATE-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
225
APT200GT60JRDL
1400
td(OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
100
VGE = 15V
80
60
40
VCE = 400V
TJ = 25°C, or 125°C
RG = 2.2Ω
L = 100μH
20
1200
1000
VGE =15V,TJ=25°C
600
400
VCE = 400V
RG = 2.2Ω
L = 100μH
200
0
0
0 50 100 150 200 250 300 350 400
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
400
VGE =15V,TJ=125°C
800
0 50 100 150 200 250 300 350 400
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
450
RG = 2.2Ω, L = 100μH, VCE = 400V
RG = 2.2Ω, L = 100μH, VCE = 400V
400
350
tr, FALL TIME (ns)
tr, RISE TIME (ns)
300
200
100
TJ = 25°C, VGE = 15V
300
250
200
TJ = 125°C, VGE = 15V
150
100
TJ = 25 or 125°C,VGE = 15V
50
0
0
0
50 100 150 200 250 300 350 400
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
0
50 100 150 200 250 300 350 400
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
50000
V
= 400V
CE
V
= +15V
GE
R = 2.2Ω
35000
G
30000
25000
TJ = 125°C
20000
15000
10000
5000
TJ = 25°C
EOFF, TURN OFF ENERGY LOSS (μJ)
Eon2, TURN ON ENERGY LOSS (μJ)
40000
0
J
80000
Eon2,400A
60000
Eoff,200A
40000
Eon2,200A
20000
30000
20000
TJ = 25°C
10000
60000
Eoff,400A
Eoff,100A
TJ = 125°C
50 100 150 200 250 300 350 400
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
SWITCHING ENERGY LOSSES (μJ)
SWITCHING ENERGY LOSSES (μJ)
Rev A 4-2009
052-6357
V
= 400V
CE
V
= +15V
GE
T = 125°C
G
40000
0
0 50 100 150 200 250 300 350 400
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
100000
V
= 400V
CE
V
= +15V
GE
R = 2.2Ω
50000
V
= 400V
CE
V
= +15V
GE
R = 2.2Ω
G
40000
Eoff,400A
30000
20000
Eoff,200A
10000
Eon2,200A
Eon2,100A
0
0
5
10
15
20
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
Eon2,400A
Eon2,100A
Eoff,100A
0
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT200GT60JRDL
1000
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
100,000
Cies
10,000
1,000
Coes
Cres
100
100
10
1
0.1
1
10
100
1000
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0
100
200
300
400
500
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
D = 0.9
0.20
0.7
0.15
0.5
Note:
PDM
0.10
0.3
t
0.1
0.05
10-5
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
10-4
10-3
10-2
10 -1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
40
75°C
30
10
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 400V
CE
R = 1.0Ω
G
20
F
100°C
10
= min (f max, f max2)
0.05
f max1 =
t d(on) + tr + td(off) + tf
max
f max2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
0
−10
30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
Rev A 4-2009
10 20
052-6357
0
t1
t2
0.05
FMAX, OPERATING FREQUENCY (kHz)
ZθJC, THERMAL IMPEDANCE (°C/W)
0.25
APT200GT60JRDL
10%
Gate Voltage
td(on)
APT100DL60
TJ = 125°C
tr
90%
IC
V CC
Collector Current
V CE
5%
10%
5%
CollectorVoltage
A
D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
TJ = 125°C
Gate Voltage
90%
td(off)
tf
Collector Current
10%
0
CollectorVoltage
Switching Energy
052-6357
Rev A 4-2009
Figure 23, Turn-off Switching Waveforms and Definitions
TYPICAL PERFORMANCE CURVES
APT200GT60JRDL
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol
IF(AV)
IF(RMS)
IFSM
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT200GT60JRDL
Maximum Average Forward Current (TC = 50°C, Duty Cycle = 0.5)
100
RMS Forward Current (Square wave, 50% duty)
116
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)
640
Unit
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
Characteristic / Test Conditions
Min
Forward Voltage
Type
Max
IF = 100A
1.25
1.6
IF = 200A
2.0
IF = 50A, TJ = 125°C
1.25
Unit
Volts
DYNAMIC CHARACTERISTICS
Characteristic
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Typ
Max
IF = 1A, diF/dt = -100A/μs,
VR = 30V, TJ = 25°C
-
56
-
-
379
-
-
2202
-
nC
-
12
-
Amps
-
580
-
ns
-
5925
-
nC
-
19
-
Amps
-
264
-
ns
-
9530
-
nC
-
61
-
Amps
IF =100A, diF/dt = -200A/μs
VR = 400V, TC = 25°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Min
IF = 100A, diF/dt = -200A/μs
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
IF = 100A, diF/dt = -1000A/μs
VR = 400V, TC = 125°C
Unit
ns
0.6
0.5
0.4
0.3
Note:
0.2
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.7
t1
t2
0.1
0
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Rev A 4-2009
IRRM
Test Conditions
052-6357
Symbol
TYPICAL PERFORMANCE CURVES (ratings per diode)
APT200GT60JRDL
700
120
TJ= 125°C
Qrr, REVERSE RECOVERY CHARGE
(nC)
trr, COLLECTOR CURRENT (A)
TJ= 55°C
80
TJ= 25°C
60
40
20
0
0.5
1.0
1.5
2.0
2.5
3.0
VF, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
8000
100A
R
6000
50A
5000
25A
4000
3000
2000
1000
0
CJ, JUNCTION CAPACITANCE (pF)
100
T = 125°C
J
V = 400V
40
R
50A
100A
35
30
25A
25
20
15
10
5
120
QRR
100
80
60
40
0.2
20
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
500
Rev A 4-2009
200
140
0.4
0
052-6357
300
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
160
IRRM
0.6
25A
0
tRR
0.8
50A
400
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1.2
1.0
500
45
T = 125°C
J
V = 400V
7000
R
600
0
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT (A)
100
0
T = 125°C
J
V = 400V
100A
TJ= 150°C
450
400
350
300
250
200
150
100
50
0
0
10
100
400
VR, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
0
Duty cycle = 0.5
TJ = 126°C
25
50
75
100
125
150
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
TYPICAL PERFORMANCE CURVES
APT200GT60JRDL
r
diF /dt Adjust
+18V
APT10035LLL
0V
D.U.T.
30μH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 32, Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Emitter/Anode
30.1 (1.185)
30.3 (1.193)
Collector/Cathode
)
Dimensions in Millimeters and (Inches
Rev A 4-2009
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign
patents. US and Foreign patents pending. All Rights Reserved.
052-6357
* Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
38.0 (1.496)
38.2 (1.504)
* Emitter/Anode
Gate