APT28GA60BD15
APT28GA60SD15
600V
High Speed PT IGBT
(B)
TO
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved
-2
47
through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
G
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short
G
C
E
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
when switching at high frequency.
Combi (IGBT and Diode)
®
FEATURES
D3PAK
(S)
C
E
TYPICAL APPLICATIONS
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Very Low Eoff for maximum efficiency
• Half bridge
• Ultra low Cres for improved noise immunity
• High power PFC boost
• Low conduction loss
• Welding
• Low gate charge
• UPS, solar, and other inverters
• Increased intrinsic gate resistance for low EMI
• High frequency, high efficiency industrial
• RoHS compliant
Absolute Maximum Ratings
Ratings
Unit
Collector Emitter Voltage
600
V
IC1
Continuous Collector Current @ TC = 25°C
50
IC2
Continuous Collector Current @ TC = 100°C
28
ICM
Pulsed Collector Current 1
84
VGE
Gate-Emitter Voltage
±30
V
PD
Total Power Dissipation @ TC = 25°C
222
W
Vces
Parameter
2
SSOA
Switching Safe Operating Area @ TJ = 150°C
TJ, TSTG
Operating and Storage Junction Temperature Range
TL
Symbol
84A @ 600V
-55 to 150
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
Static Characteristics
A
°C
300
TJ = 25°C unless otherwise specified
Parameter
Test Conditions
Min
VBR(CES)
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 1.0mA
600
VCE(on)
Collector-Emitter On Voltage
VGE(th)
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
IGES
Gate-Emitter Leakage Current
Max
2.5
VGE = 15V,
TJ = 25°C
2.0
IC = 16A
TJ = 125°C
1.9
VGE =VCE , IC = 1mA
ICES
Typ
3
4.5
TJ = 25°C
275
VGE = 0V
TJ = 125°C
3000
Microsemi Website - http://www.microsemi.com
V
6
VCE = 600V,
VGS = ±30V
Unit
±100
μA
nA
052-6335 Rev D 7 - 2009
Symbol
Dynamic Characteristics
Symbol
Parameter
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg3
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
SSOA
td(on)
tr
td(off)
tf
APT28GA60BD_SD15
TJ = 25°C unless otherwise specified
Test Conditions
Gate- Collector Charge
Switching Safe Operating Area
Min
Typ
Capacitance
2109
VGE = 0V, VCE = 25V
214
f = 1MHz
26
Gate Charge
90
VGE = 15V
14
VCE= 300V
28
nC
Turn-On Delay Time
A
L= 100uH, VCE = 600V
Inductive Switching (25°C)
11
Current Rise Time
VCC = 400V
8
Turn-Off Delay Time
VGE = 15V
101
IC = 16A
27
RG = 10Ω4
239
Eoff6
Turn-Off Switching Energy
TJ = +25°C
170
td(on)
Turn-On Delay Time
Inductive Switching (125°C)
11
Current Fall Time
Current Rise Time
VCC = 400V
10
Turn-Off Delay Time
VGE = 15V
132
IC = 16A
114
Eon2
Turn-On Switching Energy
RG = 10Ω4
412
Eoff6
Turn-Off Switching Energy
TJ = +125°C
335
tf
pF
84
Turn-On Switching Energy
tr
Unit
IC = 16A
TJ = 150°C, RG = 10Ω4, VGE = 15V,
Eon2
td(off)
Max
Current Fall Time
ns
μJ
ns
μJ
Thermal and Mechanical Characteristics
Symbol
Characteristic
RθJC
Junction to Case Thermal Resistance (IGBT)
RθJC
Junction to Case Thermal Resistance (Diode)
WT
Torque
Package Weight
Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min
Typ
Max
-
-
.56
1.35
-
5.9
Unit
°C/W
-
g
10
in·lbf
052-6335 Rev D 7 - 2009
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
APT28GA60BD_SD15
250
IC, COLLECTOR CURRENT (A)
GE
200
= 15V
15V
TJ= 150°C
TJ= 55°C
TJ= 25°C
TJ= 125°C
150
100
50
IC, COLLECTOR CURRENT (A)
V
250
13V
200
12V
11V
150
10V
100
9V
50
8V
6V
160
120
80
TJ= 25°C
TJ= -55°C
40
TJ= 125°C
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
0
4
4
6
8
10 12 14 16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3
IC = 400A
IC = 200A
2
IC = 100A
1
0
6
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
J
VCE = 120V
10
VCE = 300V
0.80
0.75
-.50 -.25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
100
IC = 32A
IC = 16A
2
IC = 8A
1
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
50
75
100
125
150
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
50
0.85
40
60
80
GATE CHARGE (nC)
FIGURE 4, Gate charge
3
1.05
0.90
20
4
60
0.95
0
5
1.10
1.00
VCE = 480V
5
0
2
TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
I = 16A
C
T = 25°C
0
25
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature
052-6335 Rev D 7 - 2009
200
VGE, GATE-TO-EMITTER VOLTAGE (V)
240
0
4
8
12 16
20 24 28
32
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 25°C)
15
250μs PULSE
TEST<0.5 % DUTY
CYCLE
IC, DC COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
280
0
0
0
5
10
15
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (TJ = 25°C)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
Typical Performance Curves
APT28GA60BD_SD15
200
16
td(ON), TURN-ON DELAY TIME (ns)
14
td(OFF), TURN-OFF DELAY TIME (ns)
VCE = 400V
TJ = 25°C, or 125°C
RG = 10Ω
L = 100μH
15
13
12
VGE = 15V
11
10
9
160
120
80
VGE =15V,TJ=25°C
40
VCE = 400V
RG = 10Ω
L = 100μH
0
8
0
5
10
15
20
25
30
35
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
35
VGE =15V,TJ=125°C
0
5
10
15
20
25
30
35
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
150
RG = 10Ω, L = 100μH, VCE = 400V
30
125
TJ = 125°C, VGE = 15V
tr, FALL TIME (ns)
tr, RISE TIME (ns)
25
20
15
10
TJ = 25 or 125°C,VGE = 15V
5
0
0
5
10
15
20
25
30
TJ = 125°C
600
500
400
300
TJ = 25°C
200
100
1000
Eoff,32A
750
Eon2,16A
500
Eoff,16A
Eon2,8A
250
Eoff,8A
0
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
SWITCHING ENERGY LOSSES (μJ)
SWITCHING ENERGY LOSSES (μJ)
052-6335 Rev D 7 - 2009
Eon2,32A
V
= 400V
CE
V
= +15V
GE
R = 10Ω
G
800
700
TJ = 125°C
600
500
400
300
200
TJ = 25°C
100
1000
J
1250
900
0
5
10
15 20 25
30
35 40
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
0
5 10 15
20 25 30 35 40
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
V
= 400V
CE
V
= +15V
GE
T = 125°C
RG = 10Ω, L = 100μH, VCE = 400V
0
0
1500
50
0
10
20
30
40
50
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1000
EOFF, TURN OFF ENERGY LOSS (μJ)
Eon2, TURN ON ENERGY LOSS (μJ)
G
800
700
TJ = 25°C, VGE = 15V
0
35
V
= 400V
CE
V
= +15V
GE
R =10Ω
900
75
25
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
1000
100
V
= 400V
CE
V
= +15V
GE
R = 10Ω
Eon2,32A
G
800
Eoff,32A
600
Eon2,16A
400
Eoff,16A
200
Eon2,8A
Eoff,8A
0
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
Typical Performance Curves
APT28GA60BD_SD15
200
10000
C, CAPACITANCE (pF)
1000
Coes
100
Cres
10
0
100
200
300
400
500
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
IC, COLLECTOR CURRENT (A)
100
Cies
10
1
0.1
1
10
100
800
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
D = 0.9
0.5
0.7
0.4
0.5
0.3
Note:
0.2
0.3
0.1
0.1
PDM
t1
t2
t
0.05
SINGLE PULSE
0
10
10 -3
10 -2
10 -1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
-5
10
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
-4
1.0
052-6335 Rev D 7 - 2009
ZθJC, THERMAL IMPEDANCE (°C/W)
0.6
APT28GA60BD_SD15
10%
90%
Gate Voltage
TJ = 125°C
td(on)
Collector Current
APT30DQ120
tr
V CE
IC
V CC
5%
10%
5%
Collector Voltage
Switching Energy
A
D.U.T.
Figure 12, Inductive Switching Test Circuit
Figure 13, Turn-on Switching Waveforms and Definitions
90%
90%
TJ = 125°C
td(off)
Gate Voltage
Collector Voltage
tf
10%
0
Collector Current
Switching Energy
052-6335 Rev D 7 - 2009
Figure 14, Turn-off Switching Waveforms and Definitions
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
IF(AV)
IF(RMS)
IFSM
APT28GA60BD_SD15
Maximum Average Forward Current (TC = 129°C, Duty Cycle = 0.5)
600
RMS Forward Current (Square wave, 50% duty)
30
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)
110
Unit
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
IF = 15A
2.0
IF = 30A
2.5
IF = 15A, TJ = 125°C
1.56
Forward Voltage
VF
Type
Max
Unit
Volts
DYNAMIC CHARACTERISTICS
Symbol Characteristic
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
Test Conditions
Min
Typ
Max
IF = 1A, diF/dt = -100A/µs,
VR = 30V, TJ = 25°C
-
15
-
IF = 15A, diF/dt = -200A/µs
VR = 400V, TC = 25°C
IF = 15A, diF/dt = -200A/µs
VR = 400V, TC = 125°C
IF = 15A, diF/dt = -1000A/µs
VR = 400V, TC = 125°C
Unit
ns
-
19
-
-
21
-
nC
-
2
-
Amps
-
105
-
ns
-
250
-
nC
-
5
-
Amps
-
55
-
ns
-
420
-
nC
-
15
-
Amps
D = 0.9
1.20
1.00
0.7
0.80
0.5
Note:
0.60
PDM
0.3
0.40
t1
t2
t
0.20
0.1
SINGLE PULSE
0.05
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
052-6335 Rev D 7 - 2009
ZθJC, THERMAL IMPEDANCE (°C/W)
1.40
Dynamic Characteristics
TJ = 25°C unless otherwise specified
60
APT28GA60BD_SD15
140
trr, REVERSE RECOVERY TIME
(ns)
T =125°C
J
V =400V
IF, FORWARD CURRENT
(A)
50
TJ = 175°C
40
TJ = 125°C
30
20
10
0
0
7.5A
60
40
0 200 400 600 800 1000 1200 1400 1600
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
R
600
30A
500
400
15A
300
7.5A
200
100
0 200 400 600 800 1000 1200 1400 1600
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
1.2
IRRM, REVERSE RECOVERY CURRENT
(A)
Qrr, REVERSE RECOVERY CHARGE
(nC)
15A
80
25
T =125°C
J
V =400V
0
R
20
30A
15
10
15A
7.5A
5
0 200 400 600 800 1000 1200 1400 1600
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
35
Qrr
Duty cycle = 0.5
T =175°C
J
trr
1.0
T =125°C
J
V =400V
0
30
25
0.8
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
100
0
700
IRRM
0.6
trr
20
15
0.4
10
Qrr
0.2
0.0
5
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
90
CJ, JUNCTION CAPACITANCE
(pF)
30A
20
TJ = 25°C
TJ = -55°C
1
2
3
4
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
052-6335 Rev D 7 - 2009
R
120
80
70
60
50
40
30
20
10
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Dynamic Characteristics
TJ = 25°C unless otherwise specified
APT28GA60BD_SD15
Vr
diF /dt Adjust
+18V
APT6017LLL
0V
D.U.T.
30μH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
3
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Collector
(Cathode)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Collector (Cathode)
(Heat Sink)
D PAK Package Outline
e3 SAC: Tin, Silver, Copper
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
13.79 (.543)
13.99(.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Gate
Collector (Cathode)
Emitter (Anode)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Collector)
and Leads are Plated
Emitter (Anode)
Collector (Cathode)
Gate
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6335 Rev D 7 - 2009
0.46 (.018)
0.56 (.022) {3 Plcs}