EFC240B-180F Low Distortion GaAs Power FET ISSUED 10/04/2006 FEATURES • • • • • • NON-HERMETIC 180MIL METAL FLANGE PACKAGE +31.0 dBm TYPICAL OUTPUT POWER 16.5 dB TYPICAL POWER GAIN AT 2GHz 0.3 x 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) MIN 29.0 IDSS PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 2GHz f = 4GHz VDS = 10 V, IDS ≈ 50% IDSS Gain at 1dB Compression f = 2GHz f = 4GHz VDS = 10 V, IDS ≈ 50% IDSS Power Added Efficiency at 1dB Compression f = 2GHz VDS = 10 V, IDS ≈ 50% IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 320 520 GM Transconductance 200 280 VP Pinch-off Voltage VDS = 3 V, IDS = 6 mA BVGD Drain Breakdown Voltage IGD = 2.4 mA -18 -20 BVGS Source Breakdown Voltage IGS = 2.4 mA -10 -17 SYMBOL P1dB G1dB PAE Rth VDS = 3 V, VGS = 0 V Thermal Resistance 15.0 TYP 31.0 31.0 16.5 11.5 MAX UNITS dBm dB 40 % 720 mA mS -2.5 -4.0 V V V o 22* C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS VDS VGS Igf Igr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 CONTINUOUS2 15V 5V 10.8mA -1.8mA 29dBm 175oC -65/175oC 6W 10V -4.5V 3.6mA -0.6mA @ 3dB Compression 175oC -65/175oC 6W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised October 2006