Data Sheet 500 mW EPITAXIAL PLANAR DIODES Mechanical Dimensions 1N4148/1N4448 Description DO-35 (Glass) Dimensions in inches(mm) Features ■ ■ ■ ■ Silicon Epitaxial Planar Diode 500mW Power Dissipation Pb Free product are Available Bulk--2K, 13" T/R--10K, T/B--5K Ammo Box Max Ratings at Tj=25C Unless Otherwise Specified Characteristic Mechanical Data ■ Case: DO-35 Glass ■ Terminals: Solderable per MIL-STD-202E Method 208 ■ Polarity: Cathode Band ■ Weight: 0.13grams Syb 1N4148/1N4448 Unit Vr 75 V Peak Reverse Voltage VRM 100 V Average Rectified Current IF(AV) 150 mA Surge Forward Current at t<1s IFSM 500 mA Reverse Voltage Power Dissipation Derate above at 25C Pd 500 mW Storage Temp. Range Ts -55~+200 C Junction Temp. Range Tj 200 C VF 1.0 max V Max Forward Voltage @ If=10mA ---1N4148 If=100mA--1N4448 Reverse Voltage Leakage Current Vr=20V Vr=75V 25 Ir 5 Reerse Breakdown Voltage tested width 100uA Vbr 100 min. V Voltage rise when switching on tseted with 50mA pulses tp=0.1us, rise time<30ns, fp=5~100kHz Vfr 2.5 max. V Recerse Recovery Time trr 4 max. nS Vr=25V at Tj=150C Capacitance at VF=VR=0 Max Thermal Resistance Junction to Ambient Air * lead lept at ambient temp. at 8mm length uA 50 Ctot 4 Rthja 350 pF k/W Data Sheet 500 mW EPITAXIAL PLANAR DIODES