BT151-500~650 Mechanical Dimensions Description A C Marking G A F *** BT151 - 500 F *** BT151 - 650 ***=Date Code TO-220AB For use in Applications Requiring high Bidirectional Blocking Voltage Capability and high Thermal Cycling Performance. Typical Applications include Motor Control, Industrial and Domestic Lighting, Heating and Static Switching ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Repetitive Peak Off State Voltage VDRM, VRRM VALUE TEST CONDITION BT151- 500 650 *500 *650 UNIT V Average On State Current IT (AV) half sine wave, Tmb < 109ºC 7.5 A RMS On State Current IT (RMS) all conduction angles 12 A half sine wave, TJ=25ºC prior to surge t=10ms 100 A t=8.3ms 110 A t=10ms ITM=20A, IG=50mA, dlG/dt=50mA/µs 50 A2s 50 A/µs 2.0 5.0 5.0 5.0 0.5 A V V W Non Repetitive Peak On State Current l2t for Fusing Repetitive Rate of Rise of On State Current After Triggering Peak Gate Current Peak Gate Voltage Peak Reverse Gate Voltage Peak Gate Power ITSM I2 t dlT/dt Average Gate Power IGM VGM VRGM PGM PG (AV) Storage Temperature Tstg - 40 to +150 ºC Tj 125 ºC Junction to Mounting Base Rth (j-mb) 1.3 max K/W Junction to Ambient Rth (j-a) 60 typ K/W Operating Junction Temperature Over any 20ms period W THERMAL RESISTANCE in free air *Although not recommended, off state voltage upto 800V may be applied without damage, but the thyristor may switch to the on state. The rate of rise of current should not exceed 15A/µ µs ELECTRICAL CHARACTERISTICS (TJ=25ºC unless specified otherwise) PARAMETER Gate Trigger Current SYMBOL IGT TEST CONDITION VD=12V, IT=0.1A Latching Current IL Holding Current IH On State Voltage Gate Trigger Voltage VT VGT Off State Leakage Current MIN MAX 15 UNIT mA VD=12V, IGT=0.1A 40 mA VD=12V, IGT=0.1A 20 mA IT=23A VD=12V, IT=0.1A VD=VDRM (max), IT=0.1A,TJ=125ºC 1.75 1.5 V V 0.25 V ID, IR VD= VDRM (max), VR=VRRM(max) TJ=125ºC SYMBOL TEST CONDITION MIN VDM=67% VDRM=(max), TJ=125ºC, exponential waveform gate open circuit 50 V/µs RGK =100Ω 200 V/µs 0.5 mA MAX UNIT DYNAMIC CHARACTERISTICS PARAMETER Critical Rate of Rise of Off State Voltage Gate Controlled Turn On time Circuit Commutated Turn Off time dVD/dt TYP tgt ITM=40A, VD=VDRM (max), IG=0.1A, dlG/dt=5A/µs 2.0 µs tq VD=67% VDRM(max), TJ=125ºC, ITM=20A, VR=25V, dlTM/dt=30A/µs, dVD/dt=50V/µs, RGK=100Ω 70 µs