FORMOSA SFM17-MH

Chip Silicon Rectifier
SFM11-MH THRU SFM18-MH
Formosa MS
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
DS-121402
2008/02/10
Revised Date
2010/11/10
Revision
D
Page.
7
Formosa MS
Chip Silicon Rectifier
SFM11-MH THRU SFM18-MH
1.0A Surface Mount Super
Fast Rectifiers-50-600V
Package outline
Features
SOD-123H
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
0.146(3.7)
0.130(3.3)
• Low profile surface mounted application in order to
•
•
•
•
•
•
•
optimize board space..
Tiny plastic SMD package.
High current capability.
Super fast reovery time for switching mode application.
High surge current capability.
Glass passivated chip junction.
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen free parts, ex. SFM11-MH-H.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
• Terminals :Plated terminals, solderable per MIL-STD-750,
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Maximum ratings and Electrical Characteristics (AT
PARAMETER
T A=25 oC unless otherwise noted)
CONDITIONS
O
Forward rectified current
Ambient temperature = 50 C
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V R = V RRM T J = 25 OC
Reverse current
UNIT
IO
1.0
A
I FSM
25
A
f=1MHz and applied 4V DC reverse voltage
Storage temperature
*1
V RRM
(V)
V RMS*2
(V)
*3
VR
(V)
SFM11-MH
50
35
50
SFM12-MH
100
70
100
SFM13-MH
150
105
150
SFM14-MH
200
140
200
SFM15-MH
300
210
300
SFM16-MH
400
280
400
SFM17-MH
500
350
500
SFM18-MH
600
420
600
*4
VF
(V)
TYP.
5.0
Operating
temperature
T J, ( OC)
*5
t rr
(ns)
uA
100
10
CJ
T STG
SYMBOLS
MIN.
IR
V R = V RRM T J = 125 OC
Diode junction capacitance
MAX.
Symbol
pF
O
+175
-65
C
*1 Repetitive peak reverse voltage
*2 RMS voltage
0.95
*3 Continuous reverse voltage
35
-55 to +150
1.25
*4 Maximum forward [email protected] F=1.0A
*5 Reverse recovery time, note 1
1.70
Note 1. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 2
Document ID
Issued Date
DS-121402
2008/02/10
Revised Date
2010/11/10
Revision
D
Page.
7
Rating and characteristic curves (SFM11-MH THRU SFM18-MH)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
-M
16
M
-M
H
H~
SF
18
-M
FM
15
M
SF
M
17
-M
H
~S
SF
1.0
H
~S
FM
14
-M
H
SF
M1
1-M
H
.1
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE (°C)
TJ=25 C
Pulse Width 300us
1% Duty Cycle
.01
.6
.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W
NONINDUCTIVE
10W
NONINDUCTIVE
( )
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
( )
PEAK FORWAARD SURGE CURRENT,(A)
.001
.4
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
8.3ms Single Half
TJ=25 C
Sine Wave
20
JEDEC method
10
0
1
5
(+)
1W
NONINDUCTIVE
50
10
100
NUMBER OF CYCLES AT 60Hz
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
70
trr
JUNCTION CAPACITANCE,(pF)
INSTANTANEOUS FORWARD CURRENT,(A)
10
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
-1.0A
60
50
40
30
20
10
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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TEL:886-2-22696661
FAX:886-2-22696141
Page 3
Document ID
Issued Date
DS-121402
2008/02/10
Revised Date
2010/11/10
Revision
D
Page.
7
Chip Silicon Rectifier
SFM11-MH THRU SFM18-MH
Formosa MS
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
1
Symbol
2
1
2
Marking
Type number
Marking code
SFM11-MH
SFM12-MH
SFM13-MH
SFM14-MH
SFM15-MH
SFM16-MH
SFM17-MH
SFM18-MH
S1
S2
S3
S4
S5
S6
S7
S8
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
A
B
C
SOD-123H
0.071 (1.80)
0.051 (1.30)
0.067 (1.70)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 4
Document ID
Issued Date
DS-121402
2008/02/10
Revised Date
2010/11/10
Revision
D
Page.
7
Formosa MS
Chip Silicon Rectifier
SFM11-MH THRU SFM18-MH
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOD-123H
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.00
3.85
1.10
1.50
178.00
62.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
DS-121402
2008/02/10
Revised Date
2010/11/10
Revision
D
Page.
7
Chip Silicon Rectifier
SFM11-MH THRU SFM18-MH
Formosa MS
Reel packing
PACKAGE
SOD-123H
REEL SIZE
7"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
3,000
4.0
BOX
(pcs)
30,000
INNER
BOX
REEL
DIA,
CARTON
SIZE
CARTON
APPROX.
GROSS WEIGHT
(m/m)
(m/m)
(m/m)
(pcs)
(kg)
183*183*123
178
382*262*387
240,000
8.5
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
150 oC
200 oC
60~120sec
Tsmax to T L
-Ramp-upRate
<3 oC/sec
Time maintained above:
-Temperature(T L )
-Time(t L )
217 oC
60~260sec
255 oC-0/+5 oC
Peak Temperature(T P )
Time within 5 oC of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25 oC to Peak Temperature
<6minutes
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 6
Document ID
Issued Date
DS-121402
2008/02/10
Revised Date
2010/11/10
Revision
D
Page.
7
Chip Silicon Rectifier
SFM11-MH THRU SFM18-MH
Formosa MS
High reliability test capabilities
Item Test
Conditions
Reference
O
1. Solder Resistance
at 260 ± 5 C for 10 ± 2sec.
immerse body into solder 1/16"±1/32"
MIL-STD-750D
METHOD-2031
2. Solderability
at 245±5 OC for 5 sec.
MIL-STD-202F
METHOD-208
3. High Temperature Reverse Bias
V R=80% rate at T J=150 OC for 168 hrs.
MIL-STD-750D
METHOD-1038
4. Forward Operation Life
Rated average rectifier current at T A=25 OC for 500hrs.
MIL-STD-750D
METHOD-1027
T A = 25 OC, I F = I O
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
5. Intermittent Operation Life
6. Pressure Cooker
JESD22-A102
15P SIG at T A=121 OC for 4 hrs.
7. Temperature Cycling
-55 OC to +125 OC dwelled for 30 min.
and transferred for 5min. total 10 cycles.
8. Thermal Shock
0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles.
MIL-STD-750D
METHOD-1056
9. Forward Surge
8.3ms single half sine-wave superimposed
on rated load, one surge.
MIL-STD-750D
METHOD-4066-2
10. Humidity
at T A=85 OC, RH=85% for 1000hrs.
MIL-STD-750D
METHOD-1021
11. High Temperature Storage Life
at 175 OC for 1000 hrs.
MIL-STD-750D
METHOD-1031
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TEL:886-2-22696661
FAX:886-2-22696141
Page 7
MIL-STD-750D
METHOD-1051
Document ID
Issued Date
DS-121402
2008/02/10
Revised Date
2010/11/10
Revision
D
Page.
7