http://www.fujielectric.com/products/semiconductor/ 1MBI50U4F-120L-50 IGBT Modules IGBT MODULE (U series) 1200V / 50A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Collector current Symbols VCES VGES Conditions Ic Continuous Ic pulse 1ms -Ic -Ic pulse Collector power dissipation Pc Reverse voltage for FWD VR IF Forword current for FWD IF pulse Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso Mounting (*2) Screw torque Terminals (*3) 1ms 1 device Continuous 1ms AC : 1min. Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable Value : 2.5 to 3.5 Nm (M5 or M6) Note *3: Recommendable Value : 2.5 to 3.5 Nm (M5) 1 Tc=25°C Tc=80°C Tc=25°C Tc=80°C Maximum ratings 1200 ±20 75 50 150 100 25 50 275 1200 75 150 +150 -40~+125 2500 Units V V 3.5 Nm A W V A °C °C VAC 1MBI50U4F-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage ICES IGES VGE (th) VCE (sat) (terminal) VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 50mA Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse Current Forward on voltage Reverse recovery time Lead resistance, terminal-chip(*4) VCE (sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) IR VF (terminal) VF (chip) trr R lead Tj=25°C Tj=125°C Tj=25°C Tj=125°C = 0V, VCE = 10V, f = 1MHz VGE = 15V IC = 50A VGE VCC = 600V, IC = 50A VGE = ±15V, RG = 22Ω VGE = 0V IF = 25A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE = 1200V VGE = 0V IF = 75A Tj=25°C Tj=125°C Tj=25°C Tj=125°C IF = 75A Characteristics min. typ. max. 1.0 200 4.5 6.5 8.5 2.00 2.15 2.20 1.90 2.05 2.10 6 0.32 1.20 0.10 0.60 0.03 0.41 1.00 0.07 0.30 1.65 2.00 1.75 1.60 1.85 1.70 1.0 1.75 1.90 1.90 1.60 1.75 1.75 0.35 1.39 - Units mA nA V V nF µs V mA V µs mΩ Note *4: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Symbols Thermal resistance (1device) Rth(j-c) Contact thermal resistance Rth(c-f) Conditions IGBT Inverse Diode FWD with Thermal Compound (*5) Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 Characteristics min. typ. max. 0.45 1.19 0.48 0.05 - Units °C/W 1MBI50U4F-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=125oC / chip Collector current vs. Collector-Emitter voltage (typ.) Tj=25oC / chip 125 125 VGE=20V 12V Collector current : Ic [A ] Collector current : Ic [ A ] VGE=20V 15V 100 75 10V 50 100 25 15V 12V 75 10V 50 25 8V 8V 0 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 5 0 Collector current vs. Collector-Emitter voltage (typ.) 125 Tj=25oC 100 Collector-Emitter voltage : VCE [ V ] 10 Tj=125oC 75 50 25 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 8 6 4 Ic=200A Ic=100A Ic=50A 2 0 5 5 10 15 20 Gate-Emitter voltage : VGE [ V ] 25 Dynamic Gate charge (typ.) Vcc=600V, Ic=50A, Tj=25oC Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f=1MHz, Tj=25oC 100.0 10.0 Collector- Emitter voltage : VCE[ 200V/div ] Gate-Emitter voltage : VGE [ 5V/div ] Capacitance : Cies, Coes, Cres [ nF ] 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25oC / chip VGE=15V / chip Collector current : Ic [ A ] 1 2 3 4 Collector-Emitter voltage : VCE [ V ] Cies 1.0 Cres Coes 0.1 0 10 20 Collector-Emitter voltage : VCE [ V ] 30 3 VGE VCE 0 0 100 200 Gate charge : Qg [ nC ] 300 1MBI50U4F-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=22Ω, Tj=25oC Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=22Ω, Tj=125oC 10000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 toff ton tr 100 tf 1000 tr 100 10 0 25 50 75 Collector current : Ic [ A ] ton toff tf 10 100 0 Switching loss : Eon, Eoff, Err [ mJ/pulse ] ton toff tr 100 tf 10 100 Gate resistance : RG [Ω] 1000 10 Eon(125oC) 8 Eoff(125oC) Eon(25oC) 6 Err(125oC) Eoff(25oC) 4 Err(25oC) 2 0 0 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=50A, VGE=±15V, Tj=125oC 25 50 75 Collector current : Ic [ A ] 100 Reverse bias safe operating area (max.) +VGE=15V, -VGE <= 15V, RG >= 22Ω, Tj <= 125oC 20 125 Eon Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 10000 10 100 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=22Ω Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=50A, VGE=±15V, Tj=25oC 1000 25 50 75 Collector current : Ic [ A ] 10 Eoff 100 75 50 25 Err 0 0 10 100 Gate resistance : RG [Ω] 1000 0 4 400 800 1200 Collector-Emitter voltage : VCE [ V ] 1600 1MBI50U4F-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ FWD FWD Forward current vs. Forward on voltage (typ.) chip 1000 Tj=25oC 150 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 200 Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, RG=22Ω Tj=125oC 100 50 0 0 1 2 3 Forward on voltage : VF [ V ] trr(125oC) trr(25oC) 100 Irr(125oC) Irr(25oC) 10 4 0 Inverse Diode Forward current vs. Forward on voltage (typ.) chip Forward current : IF [ A ] Thermal resistance : Rth(j-c) [ oC/W ] Tj=25oC Tj=125oC 40 30 20 10 0 0 1 2 3 Forward on voltage : VF [ V ] 100 Transient thermal resistance (max.) 60 50 25 50 75 Forward current : IF [ A ] 10.00 Inberse Diode 1.00 IGBT 0.10 0.01 0.001 4 5 FWD 0.010 0.100 Pulse width : Pw [ sec ] 1.000 1MBI50U4F-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm 94 80 E2 23 C1 E1 G1 23 34 G2 E2 4 C2E1 17 6.5 4 2-Ø 2.7max. 6 8 22.3 30 0.5 3-M5 Equivalent Circuit Schematic 6 1MBI50U4F-120L-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 7