http://www.fujielectric.com/products/semiconductor/ 4MBI300VG-120R-50 IGBT Modules IGBT MODULE (V series) 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT) Applications Inverter for Motor Drive Uninterruptible Power Supply Power conditioner Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC =25°C unless otherwise specified) T1, T2 Items Symbols Maximum ratings Units VCES 1200 V Gate-Emitter voltage VGES ±20 V IGBT Collector current FWD T3, T4 Conditions Collector-Emitter voltage IC Continuous TC=80°C 300 Icp 1ms TC=80°C 600 -IC 300 A -IC pulse 1ms 600 Collector power dissipation PC 1 device 1250 Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Collector current Collector power dissipation IC Continuous TC=80°C 300 Icp 1ms TC=80°C 600 PC 1 device 1250 Junction temperature Tj Case temperature TC 125 Storage temperature Tstg -40 ~ +125 A W 150 Isolation voltage between terminal and copper base (*1) Viso Screw torque W AC : 1min. 2500 Mounting (*2) - M5 or M6 3.5 Terminals (*3) - M5 3.5 Note *1:All terminals should be connected together during the test. Note *2:Recommendable value : 2.5-3.5 Nm (M5 or M6) Note *3:Recommendable value : 2.5-3.5 Nm (M5) 1 °C VAC Nm 4MBI300VG-120R-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj = 25°C unless otherwise specified) Items Symbols Conditions max. Units Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 2.0 mA IGES VCE = 0V, VGE = ±20V - - 400 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 300mA 6.0 6.5 7.0 V VCE (sat) (chip) VGE = 15V IC = 300A Tj= 25°C - 1.85 2.10 Tj=125°C - 2.20 - Tj= 25°C - 2.05 2.35 Tj=125°C - 2.40 - - 25.2 - - 1.10 1.90 - 0.70 1.25 - 0.14 - - 0.62 1.10 Input capacitance VCE (sat) (terminal) VGE = 15V IC = 300A Cies VCE = 10V, VGE =0V, f = 1MHz ton Turn-on time tr tr (i) Turn-off time toff tf VF (chip) SW mode : A VCC = 800V IC = 300A VGE = ±15V RG = +10/-1Ω IF = 300A Forward on voltage VF (terminal) IF = 300A Reverse recovery time trr SW mode : A VCC = 800V VGE = ±15V V nF µs - 0.09 0.35 Tj= 25°C - 1.70 1.95 Tj=125°C - 1.85 - Tj= 25°C - 1.95 2.25 Tj=125°C - 2.10 - - - 0.35 µs IF = 300A RG = +10/-1Ω V Zero gate voltage collector current ICES VGE = 0V, VCE = 600V - - 3.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 600 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 300mA 5.5 6.5 7.5 V VCE (sat) (chip) VGE = 15V IC = 300A Tj= 25°C - 2.45 2.80 Tj=125°C - 2.60 - VCE (sat) (terminal) VGE = 15V IC = 300A Tj= 25°C - 2.55 2.95 Tj=125°C - 2.70 - Cies VCE = 10V, VGE = 0V, f = 1MHz - 19.5 - - 0.45 1.05 - 0.27 0.53 - 0.12 - - 1.32 3.00 - 0.11 0.35 - - 0.30 P-N - 40 - P-M - 33 - M-N - 33 - Collector-Emitter saturation voltage T3, T4 typ. Gate-Emitter leakage current Collector-Emitter saturation voltage T1, T2 Characteristics min. Input capacitance ton Turn-on time tr tr (i) Turn-off time Reverse recovery time Internal inductance toff tf trr L SW mode : B VCC = 400V IC = 300A VGE = ±15V RG = +8.2/-39Ω SW mode : C VCC = 400V VGE = ±15V IC = 300A RG = +10/-1Ω V nF µs µs nH Thermal resistance characteristics Items Symbols Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) Characteristics Conditions min. typ. max. T1, T2 IGBT - - 0.10 T1, T2 FWD - - 0.16 T3, T4 RB-IGBT - - 0.10 T1, T2 - 0.025 - - 0.017 - with Thermal Compound T3, T4 Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound (thermal conductivity = 1W/m ·k). 2 Units °C/W 4MBI300VG-120R-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Definitions of switching time ～ ～ 90% 0V VGE L trr Irr VCE VCC IC 0V 0A VCE VGE 90% 10% 10% tr (i) tr IC ton Definitions of switching mode P T1 Vcc2 T3 G T3 E Vcc1 T1 G T1/T4 E T3 M U T4 Vcc2 T4 G C T2 T2 G T2 E N SW mode A B C IC 90% Load L T1 T2 T3 T4 U-N SW OFF OFF OFF OFF P-U OFF SW OFF P-U OFF OFF SW ON U-N OFF OFF ON SW M-U SW OFF OFF ON M-U OFF SW ON OFF SW: Connect to drive circuit and input gate signal ON: Bias voltage of gate +15V OFF: Reverse bias voltage of gate -15V Vcc2=Vcc1/2 3 ～ ～ RG ～ ～ 0V VCE 10% tf toff 4MBI300VG-120R-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) [ T1, T2 ] Collector current vs. Collector-Emitter voltage (typ.) [ T1, T2 ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Tj= 125°C / chip 600 600 Collector current: IC [A] 500 400 300 10V 200 100 12V 400 300 100 8V 8V 0 0 1 2 3 4 0 5 1 2 3 4 5 Collector-Emitter voltage: VCE [V] Collector-Emitter voltage: VCE [V] [ T1, T2 ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) [ T1, T2 ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Tj= 25ºC / chip 8 Collector - Emitter voltage: VCE [V] 600 500 Collector current: IC [A] 10V 200 0 Tj=125°C Tj=25°C 400 300 200 100 0 6 4 IC=600A IC=300A IC=150A 2 0 0 1 2 3 4 5 5 10 Collector-Emitter voltage: VCE [V] VGE=0V, f= 1MHz, Tj= 25°C Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 10.0 Cres Coes 0.1 10 20 25 VCC=600V, IC=300A, Tj=25ºC Cies 0 20 [ T1, T2 ] Dynamic gate charge (typ.) 100.0 1.0 15 Gate - Emitter voltage: VGE [V] [ T1, T2 ] Capacitance vs. Collector-Emitter voltage (typ.) Capacitance: Cies, Coes, Cres [nF] 15V VGE=20V 12V 15V Collector current: IC [A] VGE=20V 500 VGE VCE 0 30 Collector - Emitter voltage: VCE [V] 1 2 Gate charge: Qg [µC] 4 3 4MBI300VG-120R-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [ SW mode A ] Switching time vs. Collector current (typ.) VCC=800V, IC=300A, VGE=±15V, Tj=125°C [ SW mode A ] Switching time vs. Collector current (typ.) VCC=800V, VGE=±15V, RG=+10/-1Ω, Tj=125°C (T1, T2) 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 ton tr 1000 toff tf 100 10 0 100 200 300 400 ton 1000 tr tf 100 10 500 1 Collector current: IC [A] [ SW mode A ] Switching loss vs. gate resistance (typ.) VCC=800V, IC=300A, VGE=±15V 10 Gate resistance : RG [Ω] (T1, T2) Switching loss : Eon, Eoff, Err [mJ/pulse] 200 500 400 Eon(125°C) 300 200 Eon(25°C) 100 Eoff(125°C) Eoff(25°C) 0 1 Err(125°C) 10 Err(25°C) 100 Eon(125°C) 150 Eon(25°C) 100 Eoff(125°C) Eoff(25°C) 50 Err(125°C) Err(25°C) 0 0 100 200 300 400 500 600 Collector current: IC [A] Gate resistance : RG [Ω] (T1, T2) [ T1, T2 ] Forward current vs. forward on voltage (typ.) chip [ T1, T2 ] Reverse recovery characteristics (typ.) VCC=800V, VGE=±15V, RG=+10/-1Ω (T1, T2) 1000 Tj=25°C 500 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 600 Forward current : IF [A] 100 [ SW mode A] Switching loss vs. Collector current (typ.) VCC=800V, VGE=±15V, RG=+10/-1Ω (T1, T2) 600 Switching loss : Eon, Eoff, Err [mJ/pulse] toff Tj=125°C 400 300 200 100 0 0 1 2 3 trr(125°C) Irr(125°C) trr(25°C) Irr(25°C) 100 10 0 4 Forward on voltage : VF [V] 100 200 300 400 Forward current : IF [A] 5 500 600 4MBI300VG-120R-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Reverse bias safe operating area (max.) VGE=15V, -VGE ≦ 15V, RG ≧ +10 / -1Ω, Tj ≦ 125°C, LS = 46nH (T1, T2) T1, T2 (Terminal) Collector current: IC [A] 1000 800 600 RBSOA (Repetitive pulse) 400 200 0 0 400 800 1200 Collector-Emitter voltage : VCE [V] [ SW mode C ] Switching time vs. Collector current (typ.) VCC=400V, IC=300A, VGE=±15V, Tj=125°C [ SW mode C ] Switching time vs. Collector current (typ.) VCC=400V, VGE=±15V, RG=+10/-1Ω, Tj=125°C (T1, T2) 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 ton 1000 toff tr 100 tf 10 0 100 200 300 400 ton tr 10 500 1 200 150 100 Eon(125°C) 50 0 1 Eon(25°C) Err(125°C) 10 Err(25°C) 10 100 Gate resistance : RG [Ω] (T1, T2) [ SW mode C] Switching loss vs. Collector current (typ.) VCC=400V, VGE=±15V, RG=+10/-1Ω (T1, T2) Switching loss : Eon, Eoff, Err [mJ/pulse ] Switching loss : Eon, Eoff, Err [mJ/pulse ] [ SW mode C ] Switching loss vs. gate resistance (typ.) VCC=400V, IC=300A, VGE=±15V Eoff(25°C) tf 100 Collector current: IC [A] Eoff(125°C) toff 1000 100 75 Eon(125°C) 50 Eon(25°C) Eoff(125°C) Eoff(25°C) 25 Err(125°C) Err(25°C) 0 0 100 200 300 400 500 Collector current: IC [A] Gate resistance : RG [Ω] (T1, T2) 6 600 4MBI300VG-120R-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [ T3, T4 ] Collector current vs. Collector-Emitter voltage (typ.) [ T3, T4 ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip Tj= 25°C / chip VGE=20V 15V 12V VGE=20V 400 10V 300 200 100 400 10V 200 8V 100 8V 0 0 1 2 3 4 0 5 1 Collector-Emitter voltage: VCE [V] 2 3 4 5 Collector-Emitter voltage: VCE [V] [ T3, T4 ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) [ T3, T4 ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Tj= 25°C / chip 8 Tj=25°C 500 Collector - Emitter voltage: VCE [V] 600 Tj=125°C 400 300 200 100 0 6 4 IC=600A IC=300A IC=150A 2 0 0 1 2 3 4 5 5 10 Collector-Emitter voltage: VCE [V] VCC=300V, IC=300A, Tj=25°C Collector - Emitter voltage: VCE [100V/div] 100 Cies Coes Cres 0.1 0.01 0 10 20 25 [ T3, T4 ] Dynamic gate charge (typ.) VGE=0V, f= 1MHz, Tj= 25°C 1 20 Gate - Emitter voltage: VGE [V] [ T3, T4 ] Capacitance vs. Collector-Emitter voltage (typ.) 10 15 25 400 VCE 15 200 10 100 5 0 0 0 30 Collector - Emitter voltage: VCE [V] 0.2 0.4 0.6 0.8 Gate charge: Qg [µC] 7 20 VGE 300 1 1.2 VGE [5V/div] Collector current: IC [A] 12V 300 0 Capacitance: Cies, Coes, Cres [nF] 15V 500 Gate - Emitter voltage: Collector current: IC [A] 500 600 Collector current: IC [A] 600 4MBI300VG-120R-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [ SW mode B ] Switching time vs. Collector current (typ.) VCC=400V, IC=300A, VGE=±15V, Tj=125°C [ SW mode B ] Switching time vs. Collector current (typ.) VCC=400V, VGE=±15V, RG=+8.2/-39Ω, Tj=125°C (T3, T4) 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 toff 1000 ton tr tf 100 10 0 100 200 300 400 toff 1000 ton 100 10 500 1 Collector current: IC [A] Switching loss : Eon, Eoff, Err [mJ/pulse ] Switching loss : Eon, Eoff, Err [mJ/pulse ] 150 Eon(125°C) Eon(25°C) Eoff(125°C) Eoff(25°C) 50 Err(125°C) Err(25°C) 0 1 10 100 10 100 1000 Gate resistance : RG [Ω] (T3, T4) [ SW mode B ] Switching loss vs. Collector current (typ.) VCC=400V, VGE=±15V, RG=+8.2/-39Ω (T3, T4) [ SW mode B ] Switching loss vs. gate resistance (typ.) VCC=400V, IC=300A, VGE=±15V 100 tf tr 1000 60 Eoff(125°C) 50 Eoff(25°C) 40 30 Eon(125°C) Eon(25°C) 20 Err(125°C) 10 Err(25°C) 0 0 100 200 300 400 500 600 Collector current: IC [A] Gate resistance : RG [Ω] (T3, T4) Reverse bias safe operating area (max.) Transient Thermal Resistance (max.) VGE = 15V, -VGE ≦ 15V, RG ≧ +8.2 / -39Ω, Tj ≦ 125°C, LS = 46nH (T3, T4) T3, T4 (Terminal) 1 FWD Collector current: IC [A] Thermal resistanse: Rth(j-c) [°C/W] *** 1000 0.1 IGBT, RB-IGBT 0.01 0.001 0.001 800 600 400 RBSOA (Repetitive pulse) 200 0 0.01 0.1 1 0 Pulse Width : PW [sec] 200 400 600 Collector-Emitter voltage : VCE [V] 8 800 4MBI300VG-120R-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Reverse recovery withstand capability for FWD, RB-IGBT Tj=125°C 700 Pmax[T1,T2]=300kW 600 IRP [A] 500 400 300 200 Pmax[T3,T4]=100kW 100 0 0 200 400 600 800 1000 1200 1400 VRP [V] 9 4MBI300VG-120R-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Equivalent Circuit Schematic P T1 T3 E T3 G T3 T1 G T1/T4 E M U T4 T4 G T2 C T2 G T2 E RB-IGBT Reverse Blocking IGBT N 10 4MBI300VG-120R-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 11