http://www.fujielectric.com/products/semiconductor/ 6MBP100VDA060-50 IGBT Modules IGBT MODULE (V series) 600V / 100A / IPM Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs • Low power loss and soft switching • High performance and high reliability IGBT with overheating protection • Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (TC =25ºC, VCC =15V unless otherwise specified) Symbol Min. Max. Units Collector-Emitter Voltage (*1) Short Circuit Voltage VCES VSC IC Icp -IC PC IC Icp IF PC VCC Vin VALM IALM Tj Topr Tstg Tsol Viso 0 200 -0.5 -0.5 -0.5 -20 -40 - 600 400 100 200 100 265 20 VCC+0.5 VCC 20 150 110 125 260 AC2500 V V A A A W A A A W V V V mA ºC ºC ºC ºC Vrms - 1.7 Nm Brake Inverter Items Collector Current Collector Power Dissipation Collector Current DC 1ms Duty=64.3% (*2) 1 device (*3) DC 1ms Forward Current of Diode Collector Power Dissipation 1 device (*3) Supply Voltage of Pre-Driver (*4) Input Signal Voltage (*5) Alarm Signal Voltage (*6) Alarm Signal Current (*7) Junction Temperature Operating Case Temperature Storage Temperature Solder Temperature (*8) Isolating Voltage (*9) Terminal (M4) Screw Torque Mounting (M4) - Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W, B)-N. Note *2: Duty=125ºC/Rth(j-c)D /(I F×VF Max.)×100 Note *3: PC=125ºC/Rth(j-c)Q (Inverter & Brake) Note *4: VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13. Note *5: Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15~18 and 13. Note *6: VALM shall be applied to the voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 19 and 13. Note *7: I ALM shall be applied to the input current to terminal No.2,6,10 and 19. Note *8: Immersion time 10±1sec. 1time. Note *9: Terminal to base, 50/60Hz sine wave 1min. All terminals should be connected together during the test. 1 6MBP100VDA060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical Characteristics (Tj =25ºC, VCC =15V unless otherwise specified) Items Brake Inverter Collector Current at off signal input Symbol Conditions ICES VCE=600V Terminal Chip Terminal Chip Collector-Emitter saturation voltage VCE(sat) IC=100A Forward voltage of FWD VF IF=100A Collector Current at off signal input ICES - Collector-Emitter saturation voltage VCE(sat) - Forward voltage of FWD VF - ton toff VDC=300V, Tj=125ºC, IC=100A trr VDC=300V, IC=100A Iccp Iccn Vinth(on) Vinth(off) Switching Frequency= 0-15kHz TC=-20~110ºC IOC Tj=125ºC tdOC tSC TjOH TjH VUV VH tALM(OC) tALM(UV) tALM(TjOH) RALM Tj=125ºC Tj=125ºC Surface of IGBT Chips Switching time Supply current of P-side pre-driver (per one unit) Supply current of N-side pre-driver Input signal threshold voltage Inverter Brake Over Current Protection Delay time Short Circuit Protection Delay time IGBT Chips Over Heating Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Over Current Protection Level Alarm Signal Hold Time Resistance for current limit Vin-GND ALM-GND TC=-20~110ºC ON OFF VCC 10V Min. Typ. Max. Units 1.1 - 1.45 1.80 - 1.0 2.10 2.40 2.1 mA V V V V mA V V V V µs µs - - 0.3 µs 1.2 1.5 150 150 11.0 0.2 1.0 2.5 5.0 960 1.4 1.7 5 2 20 0.5 2.0 4.0 8.0 1265 15 48 1.6 1.9 3 12.5 2.4 4.9 11.0 1570 mA mA V V A A µs µs ºC ºC V V ms ms ms Ω Thermal Characteristics (TC = 25ºC) Items Inverter Junction to Case Thermal Resistance (*10) Brake Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)Q Rth(j-c)D Rth(c-f) IGBT FWD IGBT FWD Case to Fin Thermal Resistance with Compound Min. - Typ. 0.05 Max. 0.47 0.81 - Units °C/W °C/W °C/W °C/W °C/W Note *10: For 1device, the measurement point of the case is just under the chip. Noise Immunity (VDC =300V, VCC =15V) Items Conditions Min. Typ. Max. Units Common mode rectangular noise Pulse width 1μs, polarity ±, 10 min. Judge : no over-current, no miss operating ±2.0 - - kV Recommended Operating Conditions Items DC Bus Voltage Power Supply Voltage of Pre-Driver Switching frequency of IPM Arm shoot through blocking time for IPM's input signal Screw Torque (M4) Symbol VDC VCC fSW tdead - Min. 13.5 1.0 1.3 2 Typ. 15.0 - Max. 400 16.5 20 1.7 Units V V kHz µs Nm 6MBP100VDA060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Block Diagram P VccU ④ VinU ③ ALMU ② Pre-Driver RALM U GNDU ① VccV ⑧ VinV ⑦ ALM V ⑥ Pre-Driver RALM V GNDV ⑤ VccW ⑫ VinW ⑪ ALM W ⑩ Pre-Driver RALM GNDW ⑨ W Vcc ⑭ VinX ⑯ Pre-Driver GND ⑬ VinY ⑰ Pre-Driver VinZ ⑱ Pre-Driver ⑮ ALM ⑲ N RALM Pre-drivers include following functions 1. Amplifier for driver 2. Short circuit protection 3. Under voltage lockout circuit 4. Over current protection 5. IGBT chip over heating protection 3 6MBP100VDA060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Power supply current vs. Switching frequency T j= 25℃(typ.) 100 Input signal threshold voltage vs. Power supply voltage (typ.) 3 N-side P-side TC=25～125℃ 2.5 60 Input signal threshold voltage : Vinth(on),Vinth(off) [ V ] Power supply current : ICC [ mA ] 80 VCC=17V VCC=15V VCC=13V 40 VCC=17V VCC=15V VCC=13V 20 2 Vinth(off) 1.5 Vinth(on) 1 0.5 0 0 0 5 10 15 20 12 25 13 15 16 17 18 Under voltage hysterisis vs. Junction temperature (typ.) Under voltage vs. Junction temperature (typ.) 15 1 12 0.8 Under voltage hysterisis : VH [ V ] Under voltage : VUV [ V ] 14 Power supply voltage ： VCC [ V ] Switchig frequency ： fsw [ kHz ] 9 6 3 0.6 0.4 0.2 0 0 0 20 40 60 80 100 120 0 140 20 40 60 80 100 120 140 Junction temperature ： Tj [ ℃ ] Junction temperature ： Tj [ ℃ ] Over heating characteristics TjOH,TjH vs. VCC (typ.) Alarm hold time vs. Power supply voltage (typ.) 10 200 TjOH Alarm hold time : tALM [ msec ] 8 Over heating protection : TjOH [℃] OH hysterisis : TjH [℃] tALM (TjOH) 6 4 tALM(OC) 2 150 100 50 TjH 0 0 12 13 14 15 16 17 12 18 13 14 15 16 Power supply voltage ： VCC [ V ] Power supply voltage ： VCC [ V ] 4 17 18 6MBP100VDA060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Inverter Collector current vs. Collector-Emitter voltage Tj=25℃[Chip] (typ.) 200 200 VCC=15V VCC=17V VCC=15V 150 VCC=17V VCC=13V Collector current : IC [ A ] Collector current : IC [ A ] 150 Collector current vs. Collector-Emitter voltage Tj=25℃[Terminal] (typ.) 100 50 100 50 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 0.5 1 Collector current vs. Collector-Emitter voltage Tj=125℃[Chip] (typ.) 200 2.5 3 3.5 VCC=15V 150 VCC=13V Collector current : IC [ A ] Collector current : IC [ A ] VCC=17V 2 Collector current vs. Collector-Emitter voltage Tj=125℃[Terminal] (typ.) 200 VCC=15V 150 1.5 Collector-Emitter voltage ： VCE [ V ] Collector-Emitter voltage ： VCE [ V ] 100 50 0 VCC=13V VCC=17V 100 50 0 0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 Collector-Emitter voltage ： VCE [ V ] 1.5 2 2.5 3 3.5 Collector-Emitter voltage ： VCE [ V ] Forward current vs. Forward voltage [Chip] (typ.) 200 Forward current vs. Forward voltage [Terminal] (typ.) 200 150 150 Tj=125℃ Tj=25℃ Forward current : IF [ A ] Forward current : IF [ A ] VCC=13V 100 50 0 Tj=125℃ Tj=25℃ 100 50 0 0 0.5 1 1.5 2 2.5 3 3.5 0 Forward voltage ： VF [ V ] 0.5 1 1.5 2 2.5 Forward voltage ： VF [ V ] 5 3 3.5 6MBP100VDA060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching Loss vs. Collector Current (typ.) VDC=300V,VCC=15V,Tj=25℃ Switching Loss vs. Collector Current (typ.) VDC=300V,VCC=15V,Tj=125℃ 10 10 8 8 Switching loss ：Eon, Eoff, Err [mJ/cycle] Switching loss ：Eon, Eoff, Err [mJ/cycle] Eon Eon 6 4 Eoff 2 Eｒｒ 0 0 50 100 150 6 Eoff 4 2 Eｒｒ 0 200 0 Collector current ： IC [ A ] Thermal resistance : Rth(j-c) [ ℃/W ] Collector current : IC [ A ] RBSOA (Repetitive pulse) 0 200 400 600 FWD 1 IGBT 0.1 0.01 0.001 800 Collector-Emitter voltage ： VCE [ V ] 0.01 0.1 1 10 Pulse width ： PW [ sec ] Power derating for IGBT (max.) [per device] Power derating for FWD (max.) [per device] 300 500 250 400 Collector Power Dissipation : PC [ W ] Collector Power Dissipation : PC [ W ] 200 10 200 0 150 Transient thermal resistance (max.) 300 100 100 Collector current ： IC [ A ] Reversed biased safe operating area V CC=15V,T j≦125℃[Main Terminal] (min.) 400 50 300 200 100 0 200 150 100 50 0 0 50 100 0 150 50 100 Case Temperature ： TC [ ℃ ] Case Temperature ： TC [ ℃ ] 6 150 6MBP100VDA060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) VDC=300V,VCC=15V,Tj=25℃ Switching time vs. Collector current (typ.) VDC=300V,VCC=15V,Tj=125℃ 10000 10000 ton toff toff 1000 Switching time : ton,toff,tf [ nsec ] Switching time : ton,toff,tf [ nsec ] ton 100 tf 10 100 tf 10 0 50 100 150 200 0 50 100 150 200 Collector current ： IC [ A ] Collector current ： IC [ A ] Reverse recovery characteristics (typ.) trr,Irr vs. If Over current protection vs. Junction temperature (typ.) VCC=15V 1000 400 Over current protection level : IOC [ A ] trr Tj=125℃ Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 1000 trr Tj=25℃ 100 Irr Tj=125℃ Irr Tj=25℃ 10 1 300 200 100 0 0 50 100 150 200 0 Forward current ： IF [ A ] 20 40 60 80 100 Junction temperature ： Tj [ ℃ ] Outline Drawings, mm 7 120 140 6MBP100VDA060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. 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