FUJI 7MBP50RJ120

7MBP50RJ120
1200V / 50A 7 in one-package
IGBT IPM R-series 1200V class
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs.
· Low power loss and soft switching.
· High performance and high reliability IGBT with overheating protection.
· Both P-side and N-side alarm output available.
· Higher reliability because of a big decrease in number of parts in
built-in control circuit.
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
Bus voltage
DC
Surge
Short operating
Collector-Emitter voltage *1
Collector current
Brake
Inverter
DC
1ms
Duty=98.0% *2
Collector power dissipation One transistor *3
Collector current
DC
1ms
Forward Current of Diode
Collector power dissipation One transistor *3
Supply voltage of Pre-Driver *4
Input signal voltage *5
Input signal current
Alarm signal voltage *6
Alarm signal current *7
Junction temperature
Operating case temperature
Storage temperature
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)
Screw torque
Terminal (M5)
Mounting (M5)
Symbol
Rating
Min.
Max.
VDC
VDC(surge)
V SC
VCES
IC
ICP
-IC
PC
IC
ICP
IF
PC
V CC
Vin
Iin
VALM
IALM
Tj
Topr
Tstg
Viso
0
0
200
0
-0.5
-0.5
-0.5
-20
-40
-
900
1000
800
1200
50
100
50
357
25
50
25
198
20
Vcc+0.5
3
Vcc
20
150
100
125
AC2500
3.5
3.5
Unit
V
V
V
V
A
A
A
W
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
V
N·m
N·m
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB, N and U or V or W or DB.
*2 : 125°C/FRD Rth(j-c)/(Ic x VF Max.)=125/0.85(50x3.0)x100=98.0%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.35=357W [Inverter]
Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter]
*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13
*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15,16,17,18 and 13.
*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.
*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.
7MBP50RJ120
IGBT-IPM
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Inverter
Item
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Brake
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
Turn-on time
Turn-off time
Reverse recovery time
Symbol
ICES
VCE(sat)
Condition
ICES
VCE(sat)
VF
VCE=1200V Vin terminal open.
Ic=50A
Terminal
Chip
-Ic=50A
Terminal
Chip
VCE=1200V Vin terminal open.
Ic=25A
Terminal
-Ic=25A
Terminal
ton
toff
trr
VDC=600V,Tj=125°C
IC=50A Fig.1, Fig.6
VDC=600V, IF=50A Fig.1, Fig.6
VF
Min.
Typ.
1.2
-
-
Max.
Unit
1.0
2.6
3.0
1.0
2.6
3.3
3.6
0.3
mA
V
V
mA
V
µs
Control circuit
Item
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
Symbol
Iccp
Input zener voltage
Alarm signal hold time
VZ
tALM
Limiting Resistor for Alarm
RALM
ICCN
Vin(th)
Condition
Switching Trequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
OFF
Rin=20k ohm
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Min.
Typ.
Max.
18
65
1.00
1.35
1.70
1.25
1.60
1.95
8.0
1.1
2.0
4.0
1425
1500
1575
Unit
mA
mA
V
V
V
ms
ms
ms
ohm
Protection Section ( Vcc=15V)
Item
Over Current Protection Level of Inverter circuit
Over Current Protection Level of Brake circuit
Over Current Protection Delay time
SC Protection Delay time
IGBT Chip Over Heating
Protection Temperature Level
Over Heating Protection Hysteresis
Over Heating Protection
Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Symbol
IOC
IOC
tDOC
tSC
TjOH
TjH
TcOH
Condition
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C Fig.4
Surface of IGBT chips
Min.
Typ.
Max.
75
38
150
10
-
12
-
A
A
µs
µs
°C
-
20
-
125
°C
°C
-
°C
V
V
110
VDC=0V, IC=0A
CaseTemperature
-
TcH
V UV
VH
20
0.5
11.0
0.2
12.5
-
Thermal characteristics( Tc=25°C)
Item
Junction to Case thermal resistance *8
Inverter
Brake
IGBT
FWD
IGBT
Case to fin thermal resistance with compound
Symbol
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
Min.
-
Typ.
0.05
Min.
Typ.
Max.
0.35
0.85
0.63
Unit
°C/W
°C/W
°C/W
Max.
Unit
-
*8 : (For 1 device, Case is under the device)
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Item
Common mode rectangular noise
Common mode lightning surge
Condition
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
Interval 20s, 10 times
Judge : no over-current, no miss operating
±2.0
-
-
kV
±5.0
-
-
kV
Symbol
V DC
V CC
-
Min.
13.5
2.5
Typ.
15.0
-
Max.
800
16.5
3.0
Unit
V
V
Nm
Symbol
Wt
Min.
-
Typ.
450
Max.
-
Unit
g
Recommendable value
Item
DC Bus Voltage
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
Weight
Item
Weight
Unit
7MBP50RJ120
IGBT-IPM
Vin(th)
Vin
On
Vin(th)
trr
90%
50%
Ic
90%
10%
toff
ton
Figure 1. Switching Time Waveform Definitions
)
on
on
Gate On
Vge (Inside IPM )
Fault (Inside IPM
off
off
/Vin
Gate Off
normal
alarm
/ALM
tALM > Max.
1
tALM >
t ALM 2ms(typ.)
3
Max.
2
Fault : Over-current,Over-heat or Under-voltage
Figure 2. Input/Output Timing Diagram
tsc
Ic
Ic
Ic
I ALM
I ALM
I ALM
Figure.4 Definition of tsc
Vcc
PP
IPM
IPM
20 k
DC
15V
VccU
20k
DC
15V
VinU
SW1
P
IPM
DC
15V
SW2
Earth
GND
GND
N
Ic
AC200V
V
Vcc
VinX
DC
300V
U
GNDU
20k
+
+
Vin
HCPL
4504
CT
L
+
W
Figure 6. Switching Characteristics Test Circuit
Icc
A
4700p
N
Cooling
Fin
Vcc
P
Noise
DC
15V
IPM
U
Vin
V
P.G
+8V
fsw
W
GND
N
Figure 5. Noise Test Circuit
Figure 7. Icc Test Circuit
7MBP50RJ120
IGBT-IPM
Block diagram
P
VccU
4
VinU
3
Pre- Driver
ALMU 2
RALM 1.5k
Vz
GNDU 1
VccV
8
VinV
7
U
Pre - Driver
ALMV 6
RALM 1.5k
Vz
GNDV 5
VccW
12
VinW
11
ALMW
10
V
Pre - Driver
RALM 1.5k
Vz
GNDW 9
Vcc
14
VinX
16
W
Pre - Driver
Vz
GND
VinY
13
17
Pre - Driver
Vz
VinZ
Pre-drivers include following functions
18
1.Amplifier for driver
2.Short circuit protection
Pre - Driver
Vz
B
VinDB
15
ALM
19
3.Under voltage lockout circuit
4.Over current protection
Pre - Driver
RALM 1.5k
5.IGBT chip over heating protection
Vz
N
Over heating protection
circuit
Outline drawings, mm
13.8
_0.3
+
109
_1
+
95
_0 . 3
+
66.44
3.22 +_ 0 . 3
10
10
6 +_ 0 . 1 5
_0.2
+
10
_0.2
+
6 +_ 0 . 1 5
12
_ 0 . 25
+
4- O
/5
2 +_ 0 . 1
2
+_ 0 . 3
6 +_ 0 . 1 5
_0 . 2
+
1
10
P
20
+_ 1
+_ 0 . 3
88
74
20
B
N
U
V
0.5
17
W
0.5
24
26
26
19- 0.5
2- O
/ 2.5
9
+0 . 6
31 - 0 . 3
+1 . 0
-0.3
22
17
17
+1 . 0
-0.2
8
22
+1 . 0
-0.3
12.5
7
6 - M5
Mass : 450g
IGBT-IPM
7MBP50RJ120
Characteristics
Control circuit characteristics (Respresentative)
Input signal threshold voltage
vs. P ower s upply voltage
Power supply curr ent vs. Switching frequency
Tj=100 °C
Tj= 125° C
2.5
40
V cc = 15V
30
V cc = 13V
25
20
15
V cc = 17V
V cc = 15V
10
2
: Vin(on), Vin(off) (V)
N-side
Input s ignal thres hold voltage
V cc = 17V
P-side
35
Powe r supply current : Icc (mA)
T j= 25 °C
} Vin(off)
1.5
} Vin(on)
1
0.5
V cc = 13V
5
0
0
0
5
10
15
20
12
25
13
14
15
16
17
18
Po we r s up ply volta ge : Vc c ( V)
Sw itc hing frequenc y : fs w (kHz)
U nder voltage vs. Junction temperature
U nde r voltage hysterisis vs. Jnction tempe ra tur e
14
1
Un der vo ltage hysterisis : VH (V)
Under voltag e : VUVT (V)
12
10
8
6
4
0.8
0.6
0.4
0.2
2
0
0
20
40
60
80
1 00
120
1 40
20
40
Junction tem perat ure : Tj (°C)
80
1 00
120
1 40
O ve r heating char acte ris tic s
Tc OH ,TjOH ,T cH ,TjH vs. Vc c
Alar m ho ld time vs . P owe r s upply voltage
3
2 00
O ver heating pro tection : TcO H,TjO H (°C)
O H hysterisis : TcH,TjH (°C)
Alarm hold time : tAL M (mSe c)
60
Junc tion tem pe rat ure : Tj (°C)
2.5
Tj=1 25 °C
2
T j= 25° C
1.5
1
0.5
0
TjO H
1 50
T cO H
1 00
50
T cH,TjH
0
12
13
14
15
16
Po we r sup ply volt age : Vc c ( V)
17
18
12
13
14
15
16
Po we r s up ply vo lta ge : Vc c ( V)
17
18
7MBP50RJ120
IGBT-IPM
Main circuit characteristics (Respresentative)
Co lle ctor curr ent vs. Colle ctor -E mitte r voltage
Tj=2 5° C (Te rm inal)
Co lle ctor curr ent vs. Colle ctor -E mitte r voltage
Tj=25 °C (C hip)
80
80
Vcc= 17 V
70
V cc = 17V
70
V cc = 13V
Co lle cto r Cur re nt : Ic ( A)
V cc= 13 V
Co lle cto r Cur rent : Ic (A)
Vcc= 15V
V cc= 15 V
60
50
40
30
60
50
40
30
20
20
10
10
0
0
0
0
0 .5
1
1.5
2
2.5
2
2.5
3
80
V cc= 15 V
Vcc= 15 V
V cc= 17 V
Vcc= 17 V
70
Vcc= 13V
60
50
40
30
Colle ct or Curre nt : I c ( A)
70
Co lle cto r Curre nt : Ic ( A)
1 .5
Co lle ctor curr ent vs. Colle ctor -E mitte r voltage
Tj=12 5 °C (Term inal)
Co lle ctor curr ent vs. Colle ctor -E mitte r voltage
Tj=12 5° C (C hip)
V cc = 13V
60
50
40
30
20
20
10
10
0
0
0
0 .5
1
1.5
2
2.5
0
3
0 .5
1
1.5
2
2.5
3
C ollector -Emit ter vo lta ge : Vce (V)
C olle ct or- Emitt er vo lta ge : V ce ( V)
Fo rward curre nt vs. Fo rwar d voltage
(C hip)
Fo rward curre nt vs. Fo rwar d voltage
(T ermina l)
80
80
70
125 °C
60
50
40
30
20
10
25°C
1 25 °C
70
25° C
Forw ard Current : If (A)
F or wa rd Current : I f (A)
1
C ollector -Emit ter vo lta ge : V ce ( V)
C ollector -Emit ter vo lta ge : Vce (V)
80
0 .5
3
60
50
40
30
20
10
0
0
0
0.5
1
1 .5
F or wa rd vo lta ge : V f ( V)
2
2 .5
0
0 .5
1
1.5
2
F or wa rd vo ltag e : V f ( V)
2.5
3
7MBP50RJ120
IGBT-IPM
Switc hing Los s vs. C ollec tor C ur re nt
Edc=600V,Vcc=15V,Tj=125 °C
Switc hing Loss vs. C ollector C urrent
Edc=6 00 V,Vc c=15V ,Tj=2 5 °C
25
S wit ching lo ss : E on,E off,Er r (mJ/c yc le)
Sw itching loss : Eon,E off,Err (mJ/cycle)
25
20
15
Eon
10
Eo ff
5
Err
E on
20
15
10
Eoff
5
E rr
0
0
0
10
20
30
40
50
60
70
0
80
10
20
Colle ctor current : Ic (A)
Reversed bias ed safe operating area
Vcc=15V,Tj 125 ° C
50
60
70
Thermal re sistance : Rt h(j-c) (° C/ W )
50 0
40 0
SCS O A
(non-repetitive pu ls e)
30 0
20 0
10 0
80
Trans ient thermal resistance
60 0
C ollector cu rren t : Ic (A)
40
FW D
1
70 0
I GB T
0 .1
RBS O A
(R e petit ive pu lse)
0
0. 01
0
20 0
40 0
600
800
1 000
1 20 0
140 0
0 .001
0.01
C ollector-E m itter volta ge : V ce (V)
0 .1
1
P ulse width :P w (se c)
Power de ra ting for F W D
(pe r devic e)
Power dera ting fo r IGB T
(per device)
1 50
Collec ter Pow er Dissipation : Pc (W )
400
Collecter Pow er Dissipation : Pc (W )
30
Colle ctor cur rent : Ic (A)
350
300
250
200
150
100
1 25
1 00
75
50
25
50
0
0
0
20
40
60
80
1 00
120
Case Tem pe ratur e : Tc (°C)
1 40
160
0
20
40
60
80
1 00
120
Case Temper ature : Tc (°C)
1 40
1 60
7MBP50RJ120
IGBT-IPM
S witching time vs . C ollec to r c ur re nt
E dc =600V ,V cc =1 5V,Tj=12 5 ° C
S witching time vs. C ollec to r c ur rent
Edc=6 00V,Vcc=15V ,Tj=25 °C
1 00 00
1 00 00
Sw itching tim e : to n, tof f,tf (nSe c)
Switching time : ton,toff,tf (nSec)
t off
t off
ton
10 00
tf
1 00
tf
1 00
10
10
0
10
20
30
40
50
60
C ollect or curre nt : Ic (A)
70
80
10 00
t rr1 25 °C
t rr25° C
1 00
I rr1 25 °C
Irr 25 °C
10
0
10
20
30
40
50
For ward current : IF(A)
60
0
10
20
30
40
50
60
C ollect or curre nt : Ic (A)
Reverse re co ve ry char acte ris tic s
trr,Irr vs. IF
Reverse recover y c urr ent : Irr (A)
Rever se re co very t im e : trr (nSec)
ton
10 00
70
80
70
80
7MBP50RJ120
IGBT-IPM
Dynamic Brake Characteristics (Representative)
C ollector current vs. Collector-E mitte r voltage
Tj=2 5°C ( Terminal)
40
C o lle ctor current vs. Colle ctor-Emitter voltage
Tj=12 5°C( T ermina l)
40
Vcc= 15 V
Vcc= 15 V
Vcc= 17 V
Vcc= 17 V
35
35
Colle ct or Curre nt : I c ( A)
Co llecto r Cur rent : Ic (A)
V cc = 13V
30
25
20
15
30
Vcc= 13V
25
20
15
10
10
5
5
0
0
0
0.5
1
1.5
2
2.5
3
0
0 .5
1
1.5
2
2.5
C olle ct or- Emitt er voltage : V ce (V)
C olle ct or- Emitt er vo lta ge : V ce ( V)
Tran sien t the rm a l res is ta nc e
Revers ed bias ed safe operating area
V cc=1 5V,Tj
125 °C
1
3
35 0
T hermal resistance : R th(j-c) (°C/W )
IG B T
C ollector cu rren t : Ic (A)
30 0
0 .1
25 0
20 0
S C S OA
(no n-re peti tive pu ls e)
15 0
10 0
50
RBSOA
(R e peti tive pu ls e)
0.01
0
0 .00 1
0.01
0 .1
1
Power dera ting fo r IGB T
(per device)
Co llecte r P ow er Diss ipa tio n : Pc ( W)
2 50
2 00
1 50
1 00
50
0
20
40
60
80
1 00
20 0
40 0
600
800
1 000
1 20 0
C ollector-E m itte r volta ge : V ce (V)
P ulse wid th :P w (se c)
0
0
1 20
Case Temper ature : Tc (°C)
140
1 60
140 0