FUJI ESAD92M-03

ESAD92M-03 (20A)
Outline drawings, mm
15.5 ±0.3
±0.3
+0.2
1.1 —0.1
5.45 ±0.2
Features
Insulated package by fully molding
Low VF
Super high speed switching
3.2 +0.3
20 Min
1.6 ±0.3
5.45 ±0.2
±0.3
21.5
5.5 ±0.2
2.3 ±0.2
2.1±0.3
5.5
ø3.2 ±0.2
9.3 ±0.3
LOW LOSS SUPER HIGH SPEED RECTIFIER
( 300V / 20A )
0.6 +0.2
3.5 ±0.2
1. Gate
2. Drain
3. Source
JEDEC
EIAJ
Connection diagram
High reliability by planer design
Applications
High speed power switching
1
2
3
Maximum ratings and characteristics
Absolute maximum ratings
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
300
V
Non-Repetitive peak reverse voltage
VRSM
300
V
Isolating voltage
V iso
Terminals-to-case, AC. 1 min.
1500
V
Average output current
IO
Square wave, duty=1/2, Tc=96°C
20*
A
Surge current
IFSM
Sine wave 10ms
80
A
Operating junction temperature
Tj
-40 to +150
°C
Storage temperature
Tstg
-40 to +150
°C
*Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VFM
IFM=10A
Reverse current
IRRM
VR=VRRM
Reverse recovery time
t rr
IF=0.1A, IR=0.2A, Irec=0.05A
Thermal resistance
Rth(j-c)
Junction to case
Max.
1.2
Unit
V
200
µA
40
ns
2.0*
°C/W
ESAD92M-03 (20A)
(300V / 20A )
Characteristics
Reverse characteristics
Forward characteristics
10
50
30
1
10
IF
[A]
5
IR
[mA] 0.1
3
1
0.5
0.01
0.3
0
0.2
0.4 0.6
0.8
1.0 1.2 1.4
0.001
1.6
0
100
200
300
400
VR [V]
VF [V]
Forward power dissipation
Reverse power dissipation
2.4
12
2.0
10
1.6
8
WF
6
[W]
W R 1.2
[W]
4
0.8
2
0.4
0
0
0
2
4
6
8
10
12
0
100
Io [A]
200
300
VR [V]
Junction capacitance characteristics
Output current-case temperature
140
50
30
120
Cj
Tc
[pF]
[°C] 100
10
80
5
3
60
0
4
8
12
Io [A]
16
20
5
10
30
VR [V]
50
100
200
ESAD92M-03 (20A)
(300V / 20A )
Surge capability
100
50
IFSM
30
[A]
10
1
3
5
10
[time] (at 50Hz)
Transient thermal impedance
101
[°C/W]
100
10-1
10-3
10-2
10-1
t [sec.]
100
101
102