GXELECTRONICS 1N5941B

星合电子
ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ
1N5926B THRU 1N5956B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts
Power - 1.5 Watts
FEATURES
l Low profile package
l Built-in strain relief
l
l
l
Glass passivated junction
Low inductance
Typical IR less than 1 £gA above 11V
l
High temperature soldering :
260 ¢J /10 seconds at terminals
l
Plastic package has Underwriters Laboratory
DO-41
Flammability Classification 94V-O
MECHANICAL DATA
Case: JEDEC DO-41 Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes positive end (cathode)
Standard Packaging: 52mm tape
Weight: 0.012 ounce, 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ¢J ambient temperature unless otherwise specified.
SYMBOL
PD
DC Power Dissipation @ TL=75 ¢J , Measure at Zero Lead Length(Note 1, Fig. 1)
Derate above 75 ¢J
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated
IFSM
load(JEDEC Method) (Note 1,2)
Operating Junction and Storage Temperature Range
TJ,TSTG
VALUE
1.5
15
UNITS
Watts
mW/¢J
10
Amps
-55 to +150
¢J
NOTES:
2
1. Mounted on 5.0mm (.013mm thick) land areas.
2. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum.
3. ZENER VOLTAGE (Vz) MEASUREMENT Nominal zener voltage is measured with the device
function in thermal equilibrium with ambient temperature at 25 ¢J .
4.ZENER IMPEDANCE (Zz) DERIVATION ZZT are measured by dividing the ac voltage drop across
the device by the accurrent applied. The specified limits are for IZ(ac) = 0.1 IZ, (dc) with the ac freqency = 60Hz.
1
ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ．　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ　ＴＥＬ：０５３６－２２１０３５９　ＱＱ：４６４７６８０１７
星合电子
1N5926B THRU 1N5956B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts
Power - 1.5 Watts
ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ
ELECTRICAL CHARACTERISTICS (T L=30 ¢J unless otherwise noted) (V F=1.5Volts Max @ IF=200mA)
Device
Nominal Zener Test current
Voltage Vz @ IZT
IZT
mA
volts
(Note 1.)
1N5926B
1N5927B
1N5928B
1N5929B
1N5930B
1N5931B
1N5932B
1N5933B
1N5934B
1N5935B
1N5936B
1N5937B
1N5938B
1N5939B
1N5940B
1N5941B
1N5942B
1N5943B
1N5944B
1N5945B
1N5946B
1N5947B
1N5948B
1N5949B
1N5950B
1N5951B
1N5952B
1N5953B
1N5954B
1N5955B
1N5956B
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
34.1
31.2
28.8
25
23.4
20.8
18.7
17
15.6
13.9
12.5
11.4
10.4
9.6
8.7
8
7.3
6.7
6
5.5
5
4.6
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.1
1.9
ZZT @ IZT
Z Zk @ IZK
Ohms
Ohms
5.5
6.5
7
9
10
12
14
17.5
19
23
26
33
38
45
53
67
70
86
100
120
140
160
200
250
300
380
450
600
700
900
1200
@
550
550
550
600
600
650
650
650
700
700
750
800
850
900
950
1000
1100
1300
1500
1700
2000
2500
3000
3100
4000
4500
5000
6000
6500
7000
8000
Maximum DC
Zener Current
IZM
mAdc
Max reverse
Leakage Current
Maximum Zener Impedance (Note 2.)
IZK
IR
mA
£g A
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
VR
@
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Volts
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56
62.2
69.2
76
83.6
91.2
98.8
114
121.6
136.8
152
136
125
115
100
93
83
75
68
62
55
50
45
41
38
34
31
29
26
24
22
20
18
16
15
13
12
11
10
9
8
7
* TOLERANCE AND VOLTAGE DESIGNATION Tolerance designation - The type numbers listed indicate a
tolerance of ¡Ó 5%
RATING AND CHARACTERISTICS CURVES
1N5926B THRU 1N5956B
£c VZ, TEMPERATURE
COEFFICIENT(mV/¢J )
PD, MAXIMUM POWER
DISSIPATION (WATTS)
8
2.5
2
1.5
1
0.5
VZ@IZT
6
4
2
0
-2
-4
0
20
40
60
80
100
120
140
150
180
3
TL, LEAD TEMPERATURE (¢J)
4
6
8
10
12
VZ, ZENER VOLTAGE (VOLTS)
Fig. 1-STEADY STATE POWER DERATING
Fig. 2-ZENER VOLTAGE-TO 12 VOLTS
2
ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ．　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ　ＴＥＬ：０５３６－２２１０３５９　ＱＱ：４６４７６８０１７
1N5926B THRU 1N5956B
星合电子
ZZ, DYNAMIC IMPEDANCE (OHMS)
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts
Power - 1.5 Watts
ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ
200
£c VZ, TEMPERATURE
COEFFICIENT(mV/¢J )
VZ@IZT
100
70
50
30
20
10
10
20
30
50
70
100
200
1K
TJ - 25 ¢J
IZ(ms) = 0.1 IZ(dc)
500
VZ = 150V
200
100
91V
50
62V
20
10
22V
5
12V
2
6.8V
1
0.5
1
2
5
10
20
50
100
200
500
IZ, ZENER TEST CURRENT (mA)
VZ, ZENER VOLTAGE (VOLTS)
Fig. 3-ZENER VOLTAGE-10 TO 200 VOLTS
Fig. 4-EFFECT OF ZENER CURRENT
PPK, PEAK SURGE POWER
(WATTS)
ZZ, DYNAMIC IMPEDANCE (OHMS)
1K
200
IZ (dc) = 1mA
100
70
50
30
20
10mA
10
7
5
3
2
5
20mA
7
500
200
100
50
30
20
IZ (ms) = 0.1 IZ (dc)
10
20
30
50
70
10
.1
5
1
2 3 5
10
20
50
100
PW, PULSE WIDTH(ms)
100
IZ, ZENER CURRENT (mA)
100
IZ, ZENER CURRENT (mA)
.2 .3
100
VZ, ZENER VOLTAGE (VOLTS)
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
RECTANGULAR NONREPETITIVE
WAVEFORM TJ = 25¢J PRIOR TO
INITIAL PULSE
300
1
2 3
4
5
6 7
8
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
9 10
10
20 30 40
50 60
70 80 90
100
VZ, ZENER VOLTAGE (VOLTS)
VZ, ZENER VOLTAGE (VOLTS)
Fig. 7-VZ = 6.8 THRU 10 VOLTS
Fig. 8-VZ = 12 THRU 82 VOLTS
3
ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ．　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ　ＴＥＬ：０５３６－２２１０３５９　ＱＱ：４６４７６８０１７