星合电子 BGC30DLH THRU BGC30MLH Low VF Rectifier Diode ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ (200V~1000V / 3.0A) OUTLINE DIMENSIONS FEATURES Unit : mm Halogen-free type Lead free product, compliance to RoHS GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction Lead less chip form, no lead damage Low forward voltage drop Plastic package has Underwriters Laboratory Flammability Classification 94V-0 5.2 ± 0.1 .6 R0 3.01 Typ. 3.6 ± 0.1 * * * * * * * 1.15 ± 0.1 95 5 .01 ±0 1.15 ± 0.1 APPLICATION 1.20 ± 0.15 * General purpose rectification * Surge absorption JEDEC : DO-214AA / SMB MECHANICAL DATA MARKING Case : Packed with FRP substrate and epoxy underfilled Terminals : Pure Tin plated (Lead-Free), solderable per MIL-STD-750, Method 2026. Polarity : Cathode Band, Laser marking Weight : 0.04 gram Cathode mark Series code Halogen-free type BGC 30DL . Low VF Amps class PACKING Voltage class * 5,000 pieces per 13" (330mm ± 2mm) reel * 2 reels per box * 5 boxes per carton Voltage class: D = 200V, G = 400V, J = 600V K = 800V, M = 1000V o Absolute Maximum Ratings (Ta = 25 C) Rating ITEM Symbol Repetitive peak reverse voltage VRRM Average forward current IF(AV) Peak forward surge current (8.3ms single half sine-wave) IFSM BGC30DLH BGC30GLH BGC30JLH BGC30KLH BGC30MLH 200 400 600 800 1000 Unit V 3.0 A Operating junction temperature Range Storage temperature Range 115 110 Tj -65 to +175 TSTG -65 to +175 o C o Electrical characteristics (Ta = 25 C) ITEM Forward voltage Repetitive peak reverse current Junction capacitance Symbol Min. Typ. Max. Unit IF = 3.0A - 0.91 0.93 V o VR = Max. VRRM , Ta = 25 C - 0.10 5 uA VR = 4V, f = 1.0 MHz - 29 - pF Rth(JA) Junction to ambient (NOTE) - 68 - Rth(JL) Junction to lead (NOTE) - 19 - VF IRRM Cj Conditions o Thermal resistance NOTES : Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas. 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７ C/W 星合电子 BGC30DLH THRU BGC30MLH Low VF Rectifier Diode ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ (200V~1000V / 3.0A) FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 140 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 3.5 3.0 2.5 2.0 1.5 1.0 60Hz RESISTIVE OR INDUCTIVE LOAD 0.5 0 8.3ms SINGLE HALF SINE-WAVE 120 100 80 BGC30DLH~BGC30JLH 60 BGC30KLH & BGC30MLH 40 20 0 0 25 50 75 100 125 150 1 175 10 o NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAMPERES 1.00 0.10 0.01 o TJ=150 C 10 o TJ=125 C 1.0 0.10 o TJ=25 C 0.01 .001 0.4 0.6 0.8 1.0 1.2 1.4 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 200 100 JUNCTION CAPACITANCE, pF IINSTANTANEOUS FORWARD CURRENT, AMPERES 10.00 0.2 100 LEAD TEMPERATURE, C o TJ=25 C 10 1 .1 1.0 10 100 REVERSE VOLTAGE, VOLTS 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７