HAMAMATSU C4777-01

MODULE
APD module
C4777 series
APD module integrated with peripheral circuits
Features
Applications
l Uses high sensitivity APD
C4777
Two types of APDs with different active areas
l Spatial light transmission
(φ0.5 mm, φ3.0 mm) are provided.
communication
l Choice of high sensitivity type and low-light-level detection type ll Optical
Rangefinder
C4777 detects optical signals from 10 kHz to 100 MHz
pulsed light and is suitable for spatial light transmission and
C4777-01
rangefinder applications. C4777-01 provides a high photol Fluorescence measurement
electric sensitivity of 1.25 × 109 V/W and low NEP of 2 fW/Hz1/2,
l NOx monitor sensor
making it excellent for fluorescence measurement and NOx
l Particle counters
monitors where low-light-level detection is essential.
l Built-in temperature control circuit
An APD chip, thermoelectric cooler and thermosensor are
sealed in the same package along with the temperature
control circuit, to keep the APD chip temperature constant
and ensure stable measurements.
l Simple operation
Operates by just connecting to a DC power supply (+5 V, ±15 V).
■ Selection guide
Parameter
Active area
Photo sensitivity
Frequency bandwidth
C4777
φ0.5
-2.5 × 105
10 k to 100 M
C4777-01
φ3.0
-1.25 × 109
DC to 5 k
Unit
mm
V/W
Hz
■ Block diagram
Si APD
SIGNAL OUTPUT
FIRST AMPLIFIER
POWER SUPPLY
TEMPERATURE
CONTROL CIRCUIT
SIGNAL LIGHT
BIAS CONTROL CIRCUIT
THERMOSENSOR
HIGH VOLTAGE
POWER SUPPLY
THERMOELECTRIC COOLER
KACCC0099EA
1
APD module
C4777 series
■ Absolute maximum ratings
Parameter
Positive supply voltage
Positive supply voltage
Negative supply voltage
Input power
Operating temperature
Storage temperature
Operating/storage humidity
Symbol
Topr
Tstg
-
Condition
Value
+7
+16
-16
10
10 to 40
-10 to +60
70 % RH below
No condensation
Unit
V
V
V
mW
°C
°C
-
■ Specification (Typ. Ta=25 °C, Vcc=+5 V, +15 V, unless otherwise noted)
● Photoelectric section (APD)
Parameter
Active area
Peak sensitivity wavelength
Spectral response range
Photo sensitivity
Gain
Thermoelectric cooler
Cooling temperature
Temperature stability of gain
Symbol
A
λp
λ
S
M
-
Condition
λ=800 nm, M=1
λ=800 nm
C4777
φ0.5
C4777-01
φ3.0
800
400 to 1000
0.5
100
One-stage
50
Two-stage
0
±3
Ta=10 to 40 °C
Unit
mm
nm
nm
A/W
times
°C
%
● Signal amplification section
C4777
Parameter
High band
C ut-off frequency
Low band
Noise equivalent power
Feedback resistance
Symbol
fc
NEP
Rf
Photoelectric sensitivity
-
Output impedance
Maximum input light level
Minimum detection limit
-
Condition
-3 dB
λ=800 nm
APD include, M=100
λ=800 nm
Min.
95
-
Typ.
100
10
80
10
Max.
15
120
-
Unit
MHz
kHz
1/2
fW/Hz
kΩ
-2.0
-2.5
-3.0
× 10 5 V /W
0.6
-
50
0.8
0.80
1.20
Ω
µW
nWr.m.s.
Min.
4
-
Typ.
5
DC
2
50
Max.
4
-
Unit
kHz
1/2
fW/Hz
MΩ
-1.0
-1.25
-1.5
× 10 9 V /W
8.8
-
9.6
0.14
0.28
nW
pWr.m.s.
C4777-01
Parameter
High band
C ut-off frequency
Low band
Noise equivalent power
Feedback resistance
2
Symbol
fc
NEP
Rf
Photoelectric sensitivity
-
Maximum input light level
Minimum detection limit
-
Condition
-3 dB
λ=800 nm
APD include, M=50
λ=800 nm
C4777 series
APD module
■ General ratings
Parameter
+5 V
Power supply
+15 V
-15 V
C4777 (+5 V)
Current consumption C4777 (+15 V)
C4777 (-15 V)
C4777-01 (+5 V)
Current consumption C4777-01 (+15 V)
C4777-01 (-15 V)
C4777
Dimensional outline
C4777-01
Weight
Min.
+4.4
+14.4
-14.4
-
■ Spectral response
Typ.
+5
+15
-15
+1.2
+0.2
-0.01
+0.5
+0.15
-0.01
103 × 60 × 40
106.6 × 60 × 40
350
Max.
+5.6
+15.6
-15.6
+1.5
+0.3
-0.02
+1.0
+0.30
-0.02
V
A
A
mm
g
■ Frequency response
(Typ. Ta=25 ˚C, λ=800 nm)
50
(Typ. Ta=25 ˚C)
1010
M=100
C4777-01
PHOTO SENSITIVITY (V/W)
PHOTO SENSITIVITY (A/W)
Unit
40
30
M=50
20
10
109
108
107
106
105
C4777
0
200
10
400
600
800
1000
4
DC
1k
10 k
100 k
1M
10 M
100 M
1G
FREQUENCY (Hz)
WAVELENGTH (nm)
KAPDB0020EB
KACCB0048EA
■ Response to stepped light
C4777
C4777-01
Ta=25 °C, gain M=50, input pulse width=1 ms
X-axis: 250 µs/div., Y-axis: 500 mV/div.
Ta=25 °C, gain M=100, input pulse width=50 ns
X-axis: 10 ns/div., Y-axis: 50 mV/div.
KACCC0130EA
KACCC0131EA
3
C4777 series
APD module
■ Dimensional outline (unit: mm)
C4777
ACTIVE AREA
0.5 mm
SIDE
40.0
FRONT
60.0
103.0
25.5
37.0
30.0
(4 ×) M3 DEPTH 3
(FLANGE IS REMOVED.)
BACK
POWER
SIGNAL
POWER
SUPPLY
SIGNAL OUTPUT
BASE
60.0
4.0 ± 0.2
PHOTOSENSITIVE
SURFACE
(2 ×) M4 DEPTH 4
45.0
WEIGHT: 350 g
2.0
6.0
57.0
FLANGE IS REMOVED.
KACCA0071EA
When using C4777, be sure to terminate the output with a 50 Ω load.
C4777-01
ACTIVE AREA
3 mm
SIDE
40.0
FRONT
60.0
106.6
29.1
37.0
30.0
(4 ×) M3 DEPTH 3
(FLANGE IS REMOVED.)
BACK
POWER
SIGNAL
POWER
SUPPLY
SIGNAL OUTPUT
BASE
60.0
5.2 ± 0.2
PHOTOSENSITIVE
SURFACE
45.0
(2 ×) M4 DEPTH 4
WEIGHT: 350 g
2.0
9.5
57.0
FLANGE IS REMOVED.
When using C4777-01, do not terminate the output with a 50 Ω load.
4
KACCA0080EA
APD module
C4777 series
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Cat. No. KACC1022E06
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Nov. 2010 DN
5