EMF23 Power management (dual transistors) FEATURES z 2SA1774 and DTC114E are housed independently in a package z Power management circuit z Power switching circuit in a single package z Mounting cost and area can be cut in half SOT-563 1 MARKING: F23 TR1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -150 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ TR1 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min T yp Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC=-1mA Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob 180 390 IC=-50mA,IB=-5mA VCE=-12V,IC=-2mA,f=100MHz VCB=-12V,IE=0,f=1MHz -0.5 140 MHz 5 1 JinYu semiconductor V www.htsemi.com Date:2011/ 05 pF EMF23 DTr2 Maximum ratings (Ta=25℃ ) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -10~40 V IO 50 IC(MAX) 100 Power dissipation PC 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ mA Output current DTr2 Electrical characteristics (Ta=25 ℃ ) Parameter Symbol Min. Typ VI(off) Max. 0.5 Input voltage VI(on) Unit V 3 Conditions VCC=5V ,IO=100μA VO=0.3V ,IO=10 mA Output voltage VO(on) 0.3 V IO/II=10mA/0.5mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 μA VCC=50V, VI=0 DC current gain GI 30 Input resistance R1 7 10 13 Resistance ratio R2/R1 0.8 1 1.2 Transition frequency fT VO=5V ,IO=5mA 250 KΩ MHz VO=10V ,IO=-5mA,f=100MHz 2 JinYu semiconductor www.htsemi.com Date:2011/ 05