EMF5 General purpose transistors (dual transistors) FEATURES z 2SA2018 and DTC144E are housed independently in a package. z Mounting possible with SOT-563 automatic mounting machines. z Transistor elements are independent, eliminating interference. z Mounting cost and area be cut in half. SOT-563 1 Marking: F5 (3) Equivalent circuit (2) DTr2 (1) Tr1 R1 R2 (4) (5) (6) Tr1 Absolute maximum ratings (Ta=25℃) Symbol Parameter Value Units VCBO Collector-Base Voltage -15 V VCEO Collector-Emitter Voltage -12 V VEBO Emitter-Base Voltage -6 V IC Collector Current -500 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -15 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -12 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -6 V Collector cut-off current ICBO VCB=-15V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-6V, IC=0 -0.1 μA DC current gain hFE VCE=-2V, IC=-10mA Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob 270 680 IC=-200mA, IB=-10mA -0.25 V VCE=-2V, IE=-10mA, f=100MHz 260 MHz VCB=-10V, IE=0, f=1MHz 6.5 pF 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 EMF5 Tr2 Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -10~+40 V IO 30 IC(MAX) 100 Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Output current mA Electrical characteristics (Ta=25℃) Parameter Input voltage Symbol Min. Typ VI(off) VI(on) Max. 0.5 3.0 VCC=5V, IO=100μA VO=0.3V, IO=2mA V IO/II=10mA/0.5mA II 0.18 mA VI=5V Output current IO(off) 0.5 μA VCC=50V, VI=0 DC current gain GI 68 Input resistance R1 32.9 47 61.1 Resistance ratio R2/R1 0.8 1 1.2 Input current Transition frequency fT 0.1 V Conditions 0.3 Output voltage VO(on) Unit VO=5V, IO=5mA 250 KΩ - MHz VCE=10V, IE=-5mA, f=100MHz 2 JinYu semiconductor www.htsemi.com Date:2011/ 05