ISAHAYA 2SC3052_10

〈SMALL-SIGNAL TRANSISTOR〉
2SC3052
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE(mini type)
DESCRIPTION
OUTLINE DRAWING
Unit:mm
2SC3052 is a mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
● Small collector to emitter saturation voltage.
VCE(sat)=0.3V max(@Ic=100mA,IB=10mA)
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
APPLICATION
For Hybrid IC,small type machine low frequency voltage
TERMINAL CONNECTER
Amplify application.
①:BASE
JEITA:SC-59
②:EMITTER
JEDEC:Similar to TO-236
③:COLLECTOR
MAXIMUM RATINGS(Ta=25℃)
Symbol
Ratings
Unit
VCBO
Collector to Base voltage
50
V
VCEO
Collector to Emitter voltage
50
V
VEBO
I
O
Parameter
Emitter to Base voltage
Collector current
6
V
200
mA
Pc
Collector dissipation
200
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55∼+150
℃
MARKING
L F
Type name
hFE Item
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Symbol
C to E break down voltage
V(BR)CEO
Limits
Test conditions
Max
Unit
50
-
-
ICBO
V
CB=50V, I E=0mA
-
-
0.1
μA
Emitter cut off current
IEBO
V
EB
=6V, I C=0mA
-
-
0.1
μA
DC forward current gain
hFE
V
CE
150
-
500
DC forward current gain
hFE
V
CE=6V, I C=0.1mA
90
-
-
VCE(sat)
BE
=∞
Typ
Collector cut off current
C to E Saturation Vlotage
I C=100μA ,R
Min
=6V, I C=1mA
※
V
I C=100mA ,IB=10mA
-
-
0.3
V
fT
V
CE=6V, I E=-10mA
-
200
-
MHz
Collector output capacitance
Cob
V
CB
=6V, I E=0,f=1MHz
-
2.5
-
pF
Noise figure
NF
V
CE
=6V, I E=-0.1mA,f=1kHz,RG=2kΩ
-
-
15
dB
Gain bandwidth product
※) It shows hFE classification at right table.
ISAHAYA ELECTRONICS CORPORATION
Item
E
F
hFE Item
150∼300
250∼500
〈SMALL-SIGNAL TRANSISTOR〉
2SC3052
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE(mini type)
COMMON EMITTER TRANSFER
COMMON EMITTER OUTPUT
0.16mA
50
Ta=25℃
0.14mA
Ta=25℃
VCE=6V
0.12mA
40
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT IC(mA)
50
0.10mA
30
0.08mA
0.06mA
20
0.04mA
10
0.02mA
40
30
20
10
IB=0
0
0
0
1
2
3
4
COLLECTOR EMITTER VOLTAGE VCE(V)
5
0
0.2
0.4
0.6
0.8
BASE TO EMITTER VOLTAGE VBE(V)
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
10000
250
GAIN BAND WIDTH PRODUCT fT(MHz)
Ta=25℃
VCE=6V
100(@IC=1mA)
1000
100
10
Ta=25℃
VCE=6V
200
150
100
50
0
-0.1
1
0.1
1
10
100
1000
COLLECTOR CURRENT IC(mA)
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
-1
-10
EMITTER CURRENT IE(mA)
-100
COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE
100
250
Ta=25℃
IE=0
f=1MHz
COLLECTOR DISSIPATION Pc (mW)
COLLECTOR OUTPUT CAPACITANCE
Cob(pF)
RELATIVE VALUE OF DC FORWARD
CURRENT GAIN hFE
1
200
10
150
100
1
50
0
0
0.1
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE VCB(V)
25
50
75
100
AMBIENT TEMPERTURE Ta (℃)
ISAHAYA ELECTRONICS CORPORATION
125
150
〈SMALL-SIGNAL TRANSISTOR〉
2SC3052
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE(mini type)
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Sep.2010